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Cryogenic spectrometric ellipsometer for studding solid state optical propertiesBELYAEVA, A. I; GREBENNIK, T. G.SPIE proceedings series. 1998, pp 401-407, isbn 0-8194-2808-6Conference Paper

International Conference on Spectroscopic Ellipsometry (ICSE 4)ARWIN, Hans; BECK, Uwe; SCHUBERT, Matthias et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 4, pp 709-948, issn 1862-6300, 239 p.Conference Paper

A comparison of surface sensitive reflection spectroscopies : Linear optics at surfaces and interfacesROSEBURGH, D. S; COLE, R. J.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 39, pp S4279-S4288, issn 0953-8984Article

Fullerene embedded Langmuir-Blodgett films probed by spectroscopic ellipsometryBORTCHAGOVSKY, E. G; YURCHENKO, I. A; KAZANTSEVA, Z. I et al.SPIE proceedings series. 1998, pp 38-44, isbn 0-8194-2808-6Conference Paper

Effet Kerr magnétooptique dans les cristaux de Ln2S3-γBABONAS, G; DAGIS, R; PUKINSKAS, G et al.Fizika tverdogo tela. 1988, Vol 30, Num 11, pp 3460-3464, issn 0367-3294Article

L'ellipsométrie spectroscopique = On spectroscopic ellipsometryCASTELLON, Bernard.Photoniques (Orsay). 2002, Num 7, pp 56-59, issn 1629-4475Article

Spectroscopic ellipsometry of self assembled monolayers: interface effects. The case of phenyl selenide SAMs on goldtCANEPA, Maurizio; MAIDECCHI, Giulia; TOCCAFONDI, Chiara et al.PCCP. Physical chemistry chemical physics (Print). 2013, Vol 15, Num 27, pp 11559-11565, issn 1463-9076, 7 p.Article

5th International Conference on Spectroscopic Ellipsometry (ICSE-V)TOMPKINS, Harland G.Thin solid films. 2011, Vol 519, Num 9, issn 0040-6090, 444 p.Conference Proceedings

Accuracy of color determination from spectroscopic ellipsometry measurementsJOHS, Blaine; ARWIN, Hans; WANER, Thomas et al.Thin solid films. 2011, Vol 519, Num 9, pp 2711-2714, issn 0040-6090, 4 p.Conference Paper

A nondestructive technique of analyzing chalcogenide phase-change thin films by spectroscopic-ellipsometryWEI QIANG; YANG CAO.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 602415.1-602415.6, issn 0277-786X, isbn 0-8194-6055-9, 1VolConference Paper

Spectroscopic ellipsometry measurements with the Grating Division-of-Amplitude PhotopolarimeterNORDINE, Paul C; HAMPTON, D. Scott; KRISHNAN, Shankar et al.SPIE proceedings series. 2002, isbn 0-8194-4435-9, 2Vol, vol 2, 1190-1196Conference Paper

Characterization of interfacial index gradients by spectroscopic ellipsometry at variable angle of incidenceRIVORY, J; FRIGERIO, J.-M.Optics communications. 1992, Vol 89, Num 5-6, pp 482-492, issn 0030-4018Article

The improvement of phase modulated spectroscopic ellipsometryKIM, C. C; RACCAH, P. M; GARLAND, J. W et al.Review of scientific instruments. 1992, Vol 63, Num 5, pp 2958-2966, issn 0034-6748Article

Design of new in situ spectroscopic phase modulated ellipsometerBENFERHAT, R.Le Vide, les couches minces. 1991, Vol 47, Num 258, pp 264-273, issn 0223-4335Article

Study of thick anodic oxide films on Pt by spectroscopic ellipsometryGOTTESFELD, S; MAIA, G; FLORIANO, J. B et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 11, pp 3219-3224, issn 0013-4651Article

Characterization of small differences in surface-polishing quality of silicon wafers by spectroscopic ellipsometryCHEN ZAI; QIAN YOUHUA.Chinese physics. 1989, Vol 9, Num 2, pp 525-529, issn 0273-429X, 5 p.Article

Ellipsometer measurements using focused and masked beamsBARTON, D; URBAN, F. K.Thin solid films. 2006, Vol 515, Num 3, pp 911-916, issn 0040-6090, 6 p.Conference Paper

Optical characterization of thin films non-uniform in thickness by a multiple-wavelength reflectance methodONLIDAL, M; OHLIDAL, I; FRANTA, D et al.Surface and interface analysis. 2002, Vol 34, Num 1, pp 660-663, issn 0142-2421Conference Paper

Detection of thin a-Si:H antireflective coatings on oxidized c-Si by resonant-detected spectroscopic ellipsometryJANS, J. C; GEMMINK, J. W.Applied optics. 1993, Vol 32, Num 1, pp 84-90, issn 0003-6935Article

Real time spectroscopic ellipsometry for characterization of nucleation, growth, and optical functions of thin filmsCOLLINS, R. W; ILSIN AN; NGUYEN, H. V et al.Thin solid films. 1993, Vol 233, Num 1-2, pp 244-252, issn 0040-6090Conference Paper

Spectroscopic ellipsometry study of the relaxation state of amorphous siliconREITANO, R; GRIMALDI, M. G; BAERI, P et al.Thin solid films. 1993, Vol 233, Num 1-2, pp 203-206, issn 0040-6090Conference Paper

Study of CaF2 growth on Si, a-SiO2 by in situ spectroscopic ellipsometryRIVORY, J; FISSON, S; NGUYEN VAN, V et al.Thin solid films. 1993, Vol 233, Num 1-2, pp 260-263, issn 0040-6090Conference Paper

Determining the depth of the fissured layer of the polished surface of quartz glass using the method of IR-ellipsometryALEKSEEV, S. A; KOLOSOV, A. M; PSHENITSYN, V. I et al.Glass and ceramics. 1992, Vol 49, Num 7-8, pp 358-361, issn 0361-7610Article

A comparison of argon and hydrogen ion etching and damage in the Si-SiO2 systemHU, Y. Z; LI, M; ANDREWS, J. W et al.Journal of the Electrochemical Society. 1992, Vol 139, Num 7, pp 2022-2026, issn 0013-4651Article

In-situ spectroscopic ellipsometry : optimization of monitoring and closed-loop-control proceduresHUMLICEK, J.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 4, pp 793-796, issn 1862-6300, 4 p.Conference Paper

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