Field emission characteristics of BCN nanofilmKIMURA, Chiharu; SHIMA, Hidekazu; OKADA, Kunitaka et al.International Vacuum Nanoelectronics Conference. 2004, pp 242-243, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper

Field emission of clean and oxidized Mo<110> microtipsZHAO, X; OUTLAW, R. A; CHAMPION, R. L et al.International Vacuum Nanoelectronics Conference. 2004, pp 96-97, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper

Transport and field-emission properties of carbon nanotubesMAYER, A; MISKOVSKY, N. M; CUTLER, P. H et al.International Vacuum Nanoelectronics Conference. 2004, pp 178-179, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper

Field emission from teepee-shaped carbon nanotube bundlesBUSTA, H; TOLT, Z; MONTGOMERY, J et al.International Vacuum Nanoelectronics Conference. 2004, pp 30-31, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper

One of perspective directions of creation of highly effective field emission microdevices and microdisplaysMUKHUROV, Nikolay I; ZHDANOK, Sergey A; GASENKOVA, Irina V et al.International Vacuum Nanoelectronics Conference. 2004, pp 132-133, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper

Field emission properties of ultra-high density vertical aligned silicon nanowiresSHE, J. C; DENG, S. Z; JUN CHEN et al.International Vacuum Nanoelectronics Conference. 2004, pp 152-153, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper

A study of field emission from supramolecular carbon structuresFURSEY, G. N; PETRICK, V. I; NOVIKOV, D. V et al.International Vacuum Nanoelectronics Conference. 2004, pp 190-191, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper

Practical realisation of a field-emission-based magnetic sensorGARNER, D. M; FRENCH, P. J.International Vacuum Nanoelectronics Conference. 2004, pp 286-287, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper

Field emission and electrical properties of imogoliteOH, Jihoon; LEE, Yunha; SOHN, Daewon et al.International Vacuum Nanoelectronics Conference. 2004, pp 202-203, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper

Fabrication ans field emission characteristics of high density carbon nanotubes microarraysCHUANG, C.-C; HUANG, J. H; LEE, C.-C et al.International Vacuum Nanoelectronics Conference. 2004, pp 220-221, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper

Analysis of field emission from three-dimensional structuresKIRKPATRICK, D. A; MONKOFSKY, A; TSANG, K. T et al.Applied physics letters. 1992, Vol 60, Num 17, pp 2065-2067, issn 0003-6951Article

Destabilization mechanisms in field-emission structures with small vacuum gapEREMCHENKO, D. V; MAKHOV, V. I.Radiotehnika i èlektronika. 1990, Vol 35, Num 8, pp 1692-1694, issn 0033-8494Article

Internal field emission of diamond film cold cathodeWANG, W; JIN, C; JI, H et al.SPIE proceedings series. 1998, pp 146-148, isbn 0-8194-3021-8Conference Paper

Numerical simulation of field emission from siliconJENSEN, K. L; GANGULY, A. K.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 2, pp 371-378, issn 1071-1023Conference Paper

Field emission properties of defect-removed single-walled carbon nanotubesROH, Seungkwang; JANG, Jiyoung; OH, Jihoon et al.International Vacuum Nanoelectronics Conference. 2004, pp 80-81, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper

Scanning anode field emission microscopy for studies of planar cathodesSEMET, V; MOUTON, R; VU THIEN BINH et al.International Vacuum Nanoelectronics Conference. 2004, pp 150-151, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper

Optical and electrical studies of a single Spindt-type field emitterDESIERES, Y; NICOLAS, P; SERMET, F et al.International Vacuum Nanoelectronics Conference. 2004, pp 174-175, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper

An edge-type field emission cathode with ion trapZNAMIROWSKI, Z; CZARCZYNSKI, W; SOBANSKI, J et al.Applied surface science. 1997, Vol 111, pp 233-236, issn 0169-4332Conference Paper

Method and structure for local emission regulation and arc prevention in field emitter arraysSHAW, Jonathan L; HSU, David S. Y.International Vacuum Nanoelectronics Conference. 2004, pp 280-281, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper

Double-gated silicon field emission arrays : Fabrication and characterizationCHEN, L.-Y; AKINWANDE, A. I.International Vacuum Nanoelectronics Conference. 2004, pp 200-201, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper

Effects of hot electron emission on a low-conductivity tetracyanoethylene polymer layer including studies of the corrugation of the film surfaceLORENZ, K. L; MOUSA, M. S.Ultramicroscopy. 2003, Vol 95, Num 1-4, pp 113-117, issn 0304-3991, 5 p.Conference Paper

Emission stability of FEA microtipsNAKANE, H; YAMANE, K; MUTO, Y et al.Journal of the Society for Information Display. 2000, Vol 8, Num 3, pp 237-240, issn 1071-0922Conference Paper

Early field emission studies of semiconductorsFURSEY, G.Applied surface science. 1996, Vol 94-95, pp 44-59, issn 0169-4332Conference Paper

IFES'95: International Field Emission SymposiumMILLER, Michael K; KELLY, Thomas F; CAMUS, Patrick P et al.Applied surface science. 1996, Vol 94-95, issn 0169-4332, 532 p.Conference Proceedings

Method of calculating the number of active emitters in a multipoint systemZHUKOV, V. M; YEGOROV, N. V.Journal of communications technology & electronics. 1993, Vol 38, Num 8, pp 63-67, issn 1064-2269Article