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A BiCMOS process utilizing selective epitaxy for analog/digital applicationsKENNETH, K. O; HAE-SEUNG LEE; REIF, R et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 7, pp 1362-1369, issn 0018-9383, 8 p.Article

Extremely narrow linewidth (∼1 MHz) and high-power DFB lasers grown by MOVPEKONDO, Y; SATO, K; NAKAO, M et al.Electronics Letters. 1989, Vol 25, Num 3, pp 175-177, issn 0013-5194, 3 p.Article

Atomic layer growth of TiO₂ on silicaLAKOMAA, E.-L; HAUKKA, S; SUNTOLA, T et al.Applied surface science. 1992, Vol 60-61, pp 742-748, issn 0169-4332Conference Paper

A novel method for real-time structural monitoring of molecular beam epitaxy (MBE) processes = Une méthode nouvelle pour la surveillance de la structure en temps réel des processus d'épitaxie des faisceaux moléculaires (MBE)AONO, M; KATAYAMA, M.Proceedings of the Japan Academy. Series B Physical and biological sciences. 1989, Vol 65, Num 6, pp 137-141, issn 0386-2208, 5 p.Article

Controlling crystal growthHUMPHREYS, C.Nature (London). 1989, Vol 342, Num 6244, issn 0028-0836, 689Article

Silane gas-source atomic layer epitaxyHIROSE, F; SUEMITSU, M; MIYAMOTO, N et al.Applied surface science. 1992, Vol 60-61, pp 592-596, issn 0169-4332Conference Paper

Internal photoemission and energy-band offsets in GaAs-GalnP p-I-N heterojuction photodiodesHAASE, M. A; HAFICH, M. J; ROBINSON, G. Y et al.Applied physics letters. 1991, Vol 58, Num 6, pp 616-618, issn 0003-6951Article

Anomaly in the Ga-Si phase diagram : nonretrograde solubility of Ga in Si layers grown by liquid-phase epitaxyLINNEBACH, R. N.Journal of applied physics. 1990, Vol 67, Num 11, pp 6794-6797, issn 0021-8979Article

Polymer-regulated epitaxial crystallization of methanofullerene on micaLIDONG ZHENG; JIANGANG LIU; YANCHUN HAN et al.PCCP. Physical chemistry chemical physics (Print). 2013, Vol 15, Num 4, pp 1208-1215, issn 1463-9076, 8 p.Article

Self organization of Si/Ge nanostructures during MBE growthPCHELYAKOV, O. P.SPIE proceedings series. 1998, isbn 0-8194-2756-X, 2Vol, p. 93Conference Paper

The growth of high-purity homoepitaxial InSb layers in a molecular-beam epitaxy reactor previously used for CdTe growthWILLIAMS, G. M; WHITEHOUSE, C. R; WARD, J. J et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 1, pp 79-83, issn 0734-211X, 5 p.Article

Optical isolators using Bi-substituted rare-earth iron garnet filmsISHIKAWA, H; NAKAJIMA, K; MACHIDA, K et al.Optical and quantum electronics. 1990, Vol 22, Num 6, pp 517-528, issn 0306-8919Article

An inhomogeneous growth model of gallium arsenide epitaxial layers from the gas phaseERDOS, E; VONKA, P; STEJSKAL, J et al.Collection of Czechoslovak chemical communications. 1989, Vol 54, Num 11, pp 2933-2950, issn 0010-0765, 18 p.Article

Fabrication of lateral planar InP/GaInAsP heterojunction bipolar transistor by selective area epitaxial growthYOO, H.-J; HAYES, J. R; CANEAU, C et al.Electronics Letters. 1989, Vol 25, Num 3, pp 191-192, issn 0013-5194, 2 p.Article

Surface growth in a model of molecular-beam epitaxy with correlated noisePUI-MAN LAM; FAMILY, F.Physical review. A. 1991, Vol 44, Num 8, pp 4854-4860, issn 1050-2947Article

Room-temperature InAs_xSb_yP_1-xy light-emitting diodes for CO₂ detection at 4.2 μmKRIER, A.Applied physics letters. 1990, Vol 56, Num 24, pp 2428-2429, issn 0003-6951Article

ZnSe p-n junctions produced by metalorganic molecular-beam epitaxyMIGITA, M; TAIKE, A; YAMAMOTO, H et al.Journal of applied physics. 1990, Vol 68, Num 2, pp 880-882, issn 0021-8979Article

Chemical vapour deposition of epitaxial Ni-Zn ferrite films by thermal decomposition of acetylacetonato complexesITOH, H; UEMURA, T; YAMAGUCHI, H et al.Journal of materials science. 1989, Vol 24, Num 10, pp 3549-3552, issn 0022-2461, 4 p.Article

The effect of the asymmetric vortex in vertical VPE reactors on deposition nonuniformityROKSNOER, P. J; VAN OPDORP, C; MAES, J. W. F. M et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 8, pp 2427-2431, issn 0013-4651, 5 p.Article

Observation of ferromagnetism in an epitaxial Ag/Cr/Ag(001) structure = Observation du ferromagnétisme dans une structure épitaxique Ag/Cr/Ag(001)JOHNSON, A. D; BLAND, J. A. C; NORRIS, C et al.Journal of physics. C. Solid state physics. 1988, Vol 21, Num 24, pp L899-L904, issn 0022-3719Article

Epitaxial integration of perovskite-based multifunctional oxides on siliconBAEK, Seung-Hyub; EOM, Chang-Beom.Acta materialia. 2013, Vol 61, Num 8, pp 2734-2750, issn 1359-6454, 17 p.Article

On the formation of Si nanowires by molecular beam epitaxyWERNER, Peter; ZAKHAROV, Nikolai D; GERTH, Gerhard et al.International journal of materials research. 2006, Vol 97, Num 7, pp 1008-1015, issn 1862-5282, 8 p.Article

Epitaxial growth of polysilanes on friction-transferred poly(dimethylsilylene) filmTANIGAKI, N; YOSHIDA, Y; YASE, K et al.Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals. 1997, Vol 294-95, pp 39-42, issn 1058-725XConference Paper

Observation of gallium source spittingBRUNEMEIER, P. E.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 5, pp 2554-2555, issn 0734-211XArticle