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Results 1 to 25 of 9141

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Epitaxial structures for reduced cooling of high performance infrared detectorsASHLEY, T; GORDON, N. T.SPIE proceedings series. 1998, pp 236-243, isbn 0-8194-2726-8Conference Paper

The kinetics of fast steps on crystal surfaces and its application to the molecular beam epitaxy of siliconGHEZ, R; IYER, S. S.IBM journal of research and development. 1988, Vol 32, Num 6, pp 804-818, issn 0018-8646Article

A BiCMOS process utilizing selective epitaxy for analog/digital applicationsKENNETH, K. O; HAE-SEUNG LEE; REIF, R et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 7, pp 1362-1369, issn 0018-9383, 8 p.Article

Extremely narrow linewidth (∼1 MHz) and high-power DFB lasers grown by MOVPEKONDO, Y; SATO, K; NAKAO, M et al.Electronics Letters. 1989, Vol 25, Num 3, pp 175-177, issn 0013-5194, 3 p.Article

Atomic layer growth of TiO2 on silicaLAKOMAA, E.-L; HAUKKA, S; SUNTOLA, T et al.Applied surface science. 1992, Vol 60-61, pp 742-748, issn 0169-4332Conference Paper

A novel method for real-time structural monitoring of molecular beam epitaxy (MBE) processes = Une méthode nouvelle pour la surveillance de la structure en temps réel des processus d'épitaxie des faisceaux moléculaires (MBE)AONO, M; KATAYAMA, M.Proceedings of the Japan Academy. Series B Physical and biological sciences. 1989, Vol 65, Num 6, pp 137-141, issn 0386-2208, 5 p.Article

Controlling crystal growthHUMPHREYS, C.Nature (London). 1989, Vol 342, Num 6244, issn 0028-0836, 689Article

Magnetic anisotropy and microstructure in sputtered CoPt(110) filmsABES, M; ERSEN, O; ELKAÏM, E et al.Catalysis today. 2004, Vol 89, Num 3, pp 325-330, issn 0920-5861, 6 p.Conference Paper

Relation between film character and wafer alignment- critical alignment issues on HV device for VLSI manufacturingLO, Y.-C; LEE, C.-H; LIN, H.-P et al.SPIE proceedings series. 1998, pp 686-695, isbn 0-8194-2777-2Conference Paper

Atomic layer epitaxy of III-V compounds : chemistry and applications : Chemical vapor depositionUSUI, A.Proceedings of the IEEE. 1992, Vol 80, Num 10, pp 1641-1653, issn 0018-9219Article

Growth of epitaxial films of Bi2Sr2CaCu2O8+x onto Sr Tio3 substrates from liquid KCI solutionBALESTRINO, G; MARINELLI, M; MILANI, E et al.Journal of applied physics. 1990, Vol 68, Num 1, pp 361-363, issn 0021-8979Article

Reflection high-energy electron diffraction electron-stimulated desorption from ZnSe(100)(2×1)-Se surfacesFARRELL, H. H; DEMIGUEL, J. L; TAMARGO, M. C et al.Journal of applied physics. 1989, Vol 65, Num 10, pp 4084-4086, issn 0021-8979, 3 p.Article

Regrowth of GaAs quantum wells on GaAs liftoff films van der Waals bonded to silicon substratesYABLONOVITCH, E; KASH, K; GMITTER, T. J et al.Electronics Letters. 1989, Vol 25, Num 2, issn 0013-5194, 171Article

Croissance autoépitaxique de cristaux de sylviteAOKI, Y.Kyūshū Daigaku Rigakubu kenkyū hōkoku. Chishitsugaku. 1987, Vol 15, Num 1, pp 51-58, issn 0385-8278Article

Photoluminescence from silicon-chain cluster in poly(dimethylsilane) evaporated filmHATTORI, R; SUGANO, T; SHIRAFUJI, J et al.Applied surface science. 1997, Vol 113114, pp 472-475, issn 0169-4332Conference Paper

Interface composition control in InAs/GaSb superlatticesBENNETT, B. R; SHANABROOK, B. V; WAGNER, R. J et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 733-737, issn 0038-1101Conference Paper

Reverse temperature dependence of the Ge surface segregation during Si-molecular beam epitaxyNAKAGAWA, K; MIYAO, M.Journal of applied physics. 1991, Vol 69, Num 5, pp 3058-3062, issn 0021-8979Article

Epitaxially grown base transistor for high-speed operationSUGII, T; YAMAZAKI, T; FUKANO, T et al.IEEE electron device letters. 1987, Vol 8, Num 11, pp 528-530, issn 0741-3106Article

Silane gas-source atomic layer epitaxyHIROSE, F; SUEMITSU, M; MIYAMOTO, N et al.Applied surface science. 1992, Vol 60-61, pp 592-596, issn 0169-4332Conference Paper

Internal photoemission and energy-band offsets in GaAs-GalnP p-I-N heterojuction photodiodesHAASE, M. A; HAFICH, M. J; ROBINSON, G. Y et al.Applied physics letters. 1991, Vol 58, Num 6, pp 616-618, issn 0003-6951Article

Anomaly in the Ga-Si phase diagram : nonretrograde solubility of Ga in Si layers grown by liquid-phase epitaxyLINNEBACH, R. N.Journal of applied physics. 1990, Vol 67, Num 11, pp 6794-6797, issn 0021-8979Article

Polymer-regulated epitaxial crystallization of methanofullerene on micaLIDONG ZHENG; JIANGANG LIU; YANCHUN HAN et al.PCCP. Physical chemistry chemical physics (Print). 2013, Vol 15, Num 4, pp 1208-1215, issn 1463-9076, 8 p.Article

Self organization of Si/Ge nanostructures during MBE growthPCHELYAKOV, O. P.SPIE proceedings series. 1998, isbn 0-8194-2756-X, 2Vol, p. 93Conference Paper

The growth of high-purity homoepitaxial InSb layers in a molecular-beam epitaxy reactor previously used for CdTe growthWILLIAMS, G. M; WHITEHOUSE, C. R; WARD, J. J et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 1, pp 79-83, issn 0734-211X, 5 p.Article

Optical isolators using Bi-substituted rare-earth iron garnet filmsISHIKAWA, H; NAKAJIMA, K; MACHIDA, K et al.Optical and quantum electronics. 1990, Vol 22, Num 6, pp 517-528, issn 0306-8919Article

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