Thermal mismatch biased rhombohedral structure of strained epitaxial CaF₂ films on Si(111)TEMPEL, A; MÄDER, M; ZEHE, A et al.Physica status solidi. A. Applied research. 1988, Vol 109, Num 2, pp 493-501, issn 0031-8965Article

Effets non réciproques dans des structures hétérogènes de semiconducteursBELYANTSEV, A. M; KOZLOV, V. A; MAZOV, L. S et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 4, pp 655-660, issn 0015-3222Article

METHODES D'INTERFEROMETRIE INFRAROUGE POUR LA MESURE DES PARAMETRES DES STRUCTURES EPITAXIALES AU SILICIUM AVEC UNE COUCHE CACHEEBANKOVSKIJ YU V; VOLKOVA LV; KOKIN AA et al.1981; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1981; VOL. 10; NO 2; PP. 140-145; BIBL. 3 REF.Article

EMPLOI DE L'ABSORPTION A DEUX PHOTONS POUR ETUDIER LES HETEROSTRUCTURES EPITAXIQUES A PLUSIEURS COUCHESDVORNIKOV DP; KONNIKOV SG; PERSHIN VV et al.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 12; PP. 2355-2362; BIBL. 17 REF.Article

Caractères de disruption des diodes IMPATT sur la base de couches épitaxique Lo-Hi-Lo GaAsKONAKOVA, R. V; FAJNBERG, V. I; FILATOV, M. YU et al.Experimentelle Technik der Physik. 1983, Vol 31, Num 2, pp 159-164, issn 0014-4924Article

Structural and Magnetic Properties of Perpendicular Magnetized Mn_2.5Ga Epitaxial FilmsWU, F; MIZUKAMI, S; WATANABE, D et al.IEEE transactions on magnetics. 2010, Vol 46, Num 6, pp 1863-1865, issn 0018-9464, 3 p.Conference Paper

Donor acceptor pair spectra in Si:In LPE-layersSCHMID, W; NIEPER, U; WEBER, J et al.Solid state communications. 1983, Vol 45, Num 12, pp 1007-1011, issn 0038-1098Article

SILICON EPITAXIAL WAFER PROFILING USING THE MERCURY-SILICON SCHOTTKY DIODE DIFFERENTIAL CAPACITANCE METHODSCHAFFER PS; LALLY TR.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 229-233; BIBL. 5 REF.Article

X-ray analysis of GaAs surface reconstructions in H₂ and N₂ atmospheresKISKER, D. W; FUOSS, P. H; TOKUDA, K. L et al.Applied physics letters. 1990, Vol 56, Num 20, pp 2025-2027, issn 0003-6951Article

Ex-situ-Untersuchungen von molekularstrahl-abgeschiedenen Schichten auf Silicium-WafernGONZALES, P. P; BÜSCHEL, M; ZEHE, A et al.Wissenschaftliche Zeitschrift der Technischen Universität Dresden. 1990, Vol 39, Num 1, pp 145-150, issn 0043-6925Conference Paper

CARRIER LIFETIMES IN SILICON EPITAXIAL LAYERS DEPOSITED ON OXYGEN-IMPLANTED SUBSTRATESDAS K; SHORTHOUSE GP; BUTCHER JB et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 4; PP. 139-140; BIBL. 9 REF.Article

ELECTRICAL PROPERTIES OF SNTE EPITAXIAL FILMS ON MICA SUBSTRATESANTHANAM S; CHAUDHURI AK.1983; PHYSICA. B + C; ISSN 511463; NLD; DA. 1983; VOL. 115; NO 2; PP. 156-160; BIBL. 27 REF.Article

EXCESS CONCENTRATION, ELECTRON AND HOLE CURRENTS IN AN EPITAXIAL EMITTERKOERSELMAN H; POORTER T.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 6; PP. 681-686; BIBL. 4 REF.Article

OPTIMISATION DES PROCEDES DE PRODUCTION DE STRUCTURES AUTOEPITAXIQUES DE SILICIUMILYUNIN OK; PETRENKO VR; MOVSHITS BI et al.1978; CVETN. METALLY; SUN; DA. 1978; NO 12; PP. 55-57; BIBL. 12 REF.Article

CONFERENCE ON SOLID STATE DEVICES. 8. PROCEEDINGS; TOKYO; 1976.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 1-564; BIBL. DISSEM.Conference Paper

MESURES PAR TOPOGRAPHIE RX DES VARIATIONS LOCALES DE DISTANCE ET D'ORIENTATION ENTRE LES PLANS RETICULAIRES DES COUCHES EPITAXIQUESNITTONO O; SHIMIZU S.1977; J. VACUUM SOC. JAP.; JAP.; DA. 1977; VOL. 20; NO 10; PP. 351-357; ABS. ANGL.; BIBL. 9 REF.Article

THICKNESS OF GAP LIQUID PHASE EPITAXIAL LAYERS GROWN BY STEP-COOLING, EQUILIBRIUM-COOLING, AND RAMP-COOLING METHODSKAO YC; EKNOYAN O.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 4; PP. 1865-1867; BIBL. 10 REF.Article

CHARACTERIZATION OF SEEDED-LATERAL EPITAXIAL LAYER BY MICROPROBE REFLECTION HIGH-ENERGY ELECTRON DIFFRACTIONOHKURA M; ICHIKAWA M; MIYAO M et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1089-1090; BIBL. 11 REF.Article

RUECKSEITESNAETZUNG UND RUECKSEITENEPITAXIE BEI LEISTUNGSTRANSISTOREN = GRAVURE ET EPITAXIE DE LA FACE ARRIERE DANS LE CAS DE TRANSISTORS DE PUISSANCEEGELHAAF P; VITS W.1979; BOSCH TECH. BER.; DEU; DA. 1979; VOL. 6; NO 4; PP. 187-194; ABS. ENG/FRE; BIBL. 11 REF.Article

PLANARIZED SOLID-STATE EPITAXIAL GROWTH OF SI AND ITS EFFECT ON SCHOTTKY BARRIER DIODES.REITH TM; SULLIVAN MJ.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 3; PP. 177-179; BIBL. 16 REF.Article

BASES THEORIQUES DE LA CRISTALLISATION LORS DE LA CROISSANCE EPITAXIQUE EN SOLUTIONMALININ A YU; NEVSKIJ OB.1977; DOKL. AKAD NAUK S.S.S.R.; S.S.S.R.; DA. 1977; VOL. 236; NO 5; PP. 1177-1179; BIBL. 2 REF.Article

MACLAGE DE COUCHES EPITAXIQUES DE BIPOLYAKOV SM; LAVERKO EN; YAGODKIN VM et al.1976; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1976; VOL. 21; NO 4; PP. 863-865; H.T. 1; BIBL. 8 REF.Article

Photoelectrical and optical properties of Pb1-xMnxTe(Ga) epitaxial filmsNURIYEV, H. R; FARZALIYEV, S. S; FARADJEV, N. V et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 246-249, issn 0277-786X, isbn 0-8194-5828-7, 1Vol, 4 p.Conference Paper

Epitaxial technology of Si/CoSi₂/Si layers for solar cell applicationTSUJI, Yoshiko; NODA, Suguru; MIZUKAMI, Makoto et al.sans titre. 2002, pp 289-292, isbn 0-7803-7471-1, 4 p.Conference Paper

Photoemission study of a thin epitaxial InAs layer on InP(001)KANSKI, J; NILSSON, P. O; KARLSSON, U. O et al.Applied surface science. 1992, Vol 56-58, pp 604-609, issn 0169-4332, bConference Paper