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Results 1 to 25 of 10425

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Selective-area growth of GaN nanocolumns on titanium-mask-patterned silicon (111) substrates by RF-plasma-assisted molecular-beam epitaxyKISHINO, K; HOSHINO, T; ISHIZAWA, S et al.Electronics Letters. 2008, Vol 44, Num 13, pp 819-821, issn 0013-5194, 3 p.Article

Photoemission performance of gradient-doping transmission-mode I- GaAs photocathodesYIJUN ZHANG; JUN NIU; JIJUN ZOU et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8194, issn 0277-786X, isbn 978-0-8194-8835-0, 81940N.1-81940N.7, 2Conference Paper

Surface processes of impurity incorporation during MBE growthHERVIEU, Y. Y; RUZAIKIN, . M. P.Surface science. 1998, Vol 408, Num 1-3, pp 57-71, issn 0039-6028Article

Modelling of the chemical-pump effect and C clusteringCOLOMBEAU, B; COWERN, N. E. B.Semiconductor science and technology. 2004, Vol 19, Num 12, pp 1339-1342, issn 0268-1242, 4 p.Article

Surface architecture with large organic molecules : interface order and epitaxyUMBACH, E; GLÖCKLER, K; SOKOLOWSKI, M et al.Surface science. 1998, Vol 402-04, pp 20-31, issn 0039-6028Conference Paper

Growth of InGaSb quantum dots on GaAs substrate by molecular beam epitaxyLI, Z. G; YOU, M. H; LIU, G. J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7381, issn 0277-786X, isbn 978-0-8194-7662-3 0-8194-7662-5, 73811B.1-73811B.8Conference Paper

Workshop on molecular beam epitaxy-growth physics and technology (MBE-GPT'94)HERMAN, Marian A.Thin solid films. 1995, Vol 267, Num 1-2, issn 0040-6090, 145 p.Conference Proceedings

Heteroepitaxy of cubic GaNTRAMPERT, A; BRANDT, O; YANG, H et al.Journal de physique. III (Print). 1997, Vol 7, Num 12, pp 2309-2316, issn 1155-4320Conference Paper

Nucleation during molecular beam epitaxyZHDANOV, V. P; NORTON, P. R.Applied surface science. 1994, Vol 81, Num 2, pp 109-117, issn 0169-4332Article

Instabilities in MBE growthHUNT, A. W; ORME, C; WILLIAMS, D. R. M et al.Europhysics letters (Print). 1994, Vol 27, Num 8, pp 611-616, issn 0295-5075Article

Molecular beam epixay of compound semiconductorsARTHUR, J. R.Surface science. 1994, Vol 299-300, Num 1-3, pp 818-823, issn 0039-6028Article

Molecular-beam epitaxy and lattice parameter of GaNxSb1―x: deviation from Vegard's law for x > 0.02ASHWIN, M. J; MORRIS, R. J. H; WALKER, D et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 26, issn 0022-3727, 264003.1-264003.4Conference Paper

New VCSEL technology with scalability for single mode operation and densely integrated arraysGUOWEI ZHAO; DEMIR, Abdullah; FREISEM, Sabine et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8054, issn 0277-786X, isbn 978-0-8194-8628-8, 80540A.1-80540A.6Conference Paper

Recent Development of High-Power-Efficiency 50-W CW TE/TM Polarized 808-nm Diode Laser Bar at LasertelCHUANSHUN CAO; LI FAN; IRENE AI et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7583, issn 0277-786X, isbn 978-0-8194-7979-2 0-8194-7979-9, 1Vol, 75830L.1-75830L.6Conference Paper

Optimization of RF plasma sources for the MBE growth of nitride and dilute nitride semiconductor materialGRANT, V. A; CAMPION, R. P; FOXON, C. T et al.Semiconductor science and technology. 2007, Vol 22, Num 2, pp 15-19, issn 0268-1242, 5 p.Article

High-quality 1.3 μm GaInNAs single quantum well lasers grown by MBEWANG, X. D; WANG, S. M; WEI, Y. Q et al.Electronics Letters. 2004, Vol 40, Num 21, pp 1338-1339, issn 0013-5194, 2 p.Article

Observation of localization complexes and phonons replicas in heavily doped GaAs1-xNxBOUSBIH, F; BEN BOUZID, S; CHTOUROU, R et al.Applied surface science. 2004, Vol 226, Num 1-3, pp 41-44, issn 0169-4332, 4 p.Conference Paper

A facility for nanoscience research: An overviewSTROSCIO, J. A; HUDSON, E. W; BLANKENSHIP, S. R et al.SPIE proceedings series. 2002, pp 112-115, isbn 0-8194-4347-6, 4 p.Conference Paper

Surface atomic process of incorporation of excess arsenic in molecular-beam epitaxy of GaAsSUDA, A; OTSUKA, N.Surface science. 2000, Vol 458, Num 1-3, pp 162-172, issn 0039-6028Article

Comment on : Steady-state island populations on a vicinal surface : saturation of the island densities by B. Voigtlander et alHARRIS, S.Surface science. 2000, Vol 453, Num 1-3, pp L315-L317, issn 0039-6028Article

Real-time analysis of Si monolayer formation on GaAs(001) during MBEDÄWERITZ, L; SCHÜTZENDÜBE, P; REICHE, M et al.Surface science. 1998, Vol 402-04, pp 257-262, issn 0039-6028Conference Paper

Gas-source growth of group IV semiconductors : III. Nucleation and growth of Ge/Si(001)GOLDFARB, I; OWEN, J. H. G; HAYDEN, P. T et al.Surface science. 1997, Vol 394, Num 1-3, pp 105-118, issn 0039-6028Article

Influence of film thickness on the molecular arrangement of copper phthalocyanine on hydrogen-terminated Si(111)NAKAMURA, M; MORITA, Y; TOKUMOTO, H et al.Applied surface science. 1997, Vol 113114, pp 316-321, issn 0169-4332Conference Paper

Unstable epitaxy on vicinal surfacesROST, M; SMILAUER, P; KRUG, J et al.Surface science. 1996, Vol 369, Num 1-3, pp 393-402, issn 0039-6028Article

An electrostatic Si e-gun and a high temperature elemental B source for Si heteroepitaxial growthSCARINCI, F; CASELLA, A; LAGOMARSINO, S et al.Applied surface science. 1996, Vol 102, pp 38-41, issn 0169-4332Conference Paper

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