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kw.\*:("Epitaxie phase solide")

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Scanning tunneling microscopy observations of Ge solid-phase epitaxy on Si(111)HIBINO, H; OGINO, T.Applied surface science. 1994, Vol 82-83, Num 1-4, pp 374-379, issn 0169-4332Conference Paper

Atomic mechanism of stimulated solid-phase epitaxial growth of amorphous layersGERASIMOV, A. B; BIBILASHVILI, A. P; BOKHOCHADZE, Z. G et al.Fizika i himiâ obrabotki materialov. 2001, Num 6, pp 62-68, issn 0015-3214Article

Effect of surfactant on Ge crystallization on Si in solid phase epitaxyAIZAWA, N; HOMMA, Y; TOMITA, M et al.Surface science. 1997, Vol 376, Num 1-3, pp L419-L423, issn 0039-6028Article

Ge epilayer of high quality on a Si substrate by solid-phase epitaxyLIU, W. S; CHEN, J. S; LIE, D. Y. C et al.Applied physics letters. 1993, Vol 63, Num 10, pp 1405-1407, issn 0003-6951Article

Epitaxial silicides : new results from RHEED analysisMAZUREK, P; PAPROCKI, K; MIKOLAJCZAK, P et al.Thin solid films. 1995, Vol 267, Num 1-2, pp 95-98, issn 0040-6090Conference Paper

Synthesis and study of Raman active modes of Cu1-xTlxBa2CaCu2O8-y superconductor thin filmsKHAN, Nawazish A; IHARA, H.Physica. C. Superconductivity. 2004, Vol 403, Num 4, pp 247-251, issn 0921-4534, 5 p.Article

Depth profiling of Co/Ti - silicide films using total reflection X-ray fluorescence (TXRF) spectrometry combined with low energy ion beam etching (IBE) for sample preparationFRANK, W; SCHINDLER, A; THOMAS, H.-J et al.Fresenius' journal of analytical chemistry. 1998, Vol 361, Num 6-7, pp 625-627, issn 0937-0633Conference Paper

Quasi-medium energy ion scattering spectroscopy study of Ge δ-layer on Si(001)FUSE, T; KAWAMOTO, K; KUJIME, S et al.Applied surface science. 1997, Vol 121-22, pp 218-222, issn 0169-4332Conference Paper

Scanning tunneling microscopy study of solid-phase epitaxy processes of amorphous silicon layers on silicon substratesUESUGI, K; KOMURA, T; YOSHIMURA, M et al.Applied surface science. 1994, Vol 82-83, Num 1-4, pp 367-373, issn 0169-4332Conference Paper

Surface atomic structure of alloyed Mn5Ge3(0001) by scanning tunneling microscopyKIM, Howon; JUNG, Goo-Eun; JONG KEON YOON et al.Surface science. 2008, Vol 602, Num 2, pp 481-486, issn 0039-6028, 6 p.Article

Ion beam synthesis of heteroepitaxial erbium silicide layersWU, M. F; VANTOMME, A; PATTYN, H et al.Applied surface science. 1996, Vol 102, pp 184-188, issn 0169-4332Conference Paper

Growth of extra-thin ordered aluminum films on Si(111) surfaceKHRAMTSOVA, E. A; ZOTOV, A. V; SARANIN, A. A et al.Applied surface science. 1994, Vol 82-83, Num 1-4, pp 576-582, issn 0169-4332Conference Paper

Interaction of cobalt with the Si(100)2 × 1 surface studied by photoelectron spectroscopyGOMOYUNOVA, M. V; PRONIN, I. I; GALL, N. R et al.Surface science. 2005, Vol 578, Num 1-3, pp 174-182, issn 0039-6028, 9 p.Article

A high performance double-gate SOI MOSFET using lateral solid phase epitaxyHAITAO LIU; ZHIBIN XIONG; SIN, Johnny K. O et al.IEEE International SOI conference. 2002, pp 28-29, isbn 0-7803-7439-8, 2 p.Conference Paper

A simple model of epitaxial growth : the influence of step edge diffusionBIEHL, M; KINNE, M; KINZEL, W et al.Computer physics communications. 1999, Vol 121-22, pp 347-352, issn 0010-4655Conference Paper

Observation of a temporal evolution of defected epitaxial erbium silicide layers at room temperatureSAINTENOY, S; WETZEL, P; PIRRI, C et al.Solid state communications. 1996, Vol 98, Num 11, pp 1015-1020, issn 0038-1098, 5 p.Article

Boron δ-dopin in Si atmospheric pressure CVDKIYOTA, Y; NAKAMURA, T; INADA, T et al.Applied surface science. 1994, Vol 82-83, Num 1-4, pp 400-404, issn 0169-4332Conference Paper

A clarification of optical transition of β-FeSi2 filmLIANWEI WANG; CHENGLU LIN; XIANG DONG CHEN et al.Solid state communications. 1996, Vol 97, Num 5, pp 385-388, issn 0038-1098Article

Lateral-solid phase epitaxial growth of single-crystal Al(110) films over striped SiO2 patternsKUSUYAMA, K.; NAKAJIMA, Y; MURAKAMI, Y et al.Japanese journal of applied physics. 1993, Vol 32, Num 9A, pp 3950-3954, issn 0021-4922, 1Article

The aluminium/sapphire interface formation at high temperature : an AES and LEED studyVERMEERSCH, M; MALENGREAU, F; SPORKEN, R et al.Surface science. 1995, Vol 323, Num 1-2, pp 175-187, issn 0039-6028Article

Photoemission study of cobalt interaction with the oxidized Si(100)2 × 1 surfaceGOMOYUNOVA, M. V; PRONIN, I. I; MALYGIN, D. E et al.Surface science. 2006, Vol 600, Num 12, pp 2449-2456, issn 0039-6028, 8 p.Article

Synthesis and properties of epitaxial semiconducting silicidesDERRIEN, J; CHEVRIER, J; LE THANH VINH et al.Applied surface science. 1993, Vol 73, pp 90-101, issn 0169-4332Conference Paper

Amorphization and Solid-Phase Epitaxial Growth of C-Cluster Ion-Implanted SiRUDAWSKI, N. G; WHIDDEN, L. R; CRACIUN, V et al.Journal of electronic materials. 2009, Vol 38, Num 9, pp 1926-1930, issn 0361-5235, 5 p.Article

Leakage suppression of gated diodes fabricated under low-temperature annealing with substitutional carbon Si1-yCy incorporationCHUNG FOONG TAN; ENG FONG CHOR; LEE, Hyeokjae et al.IEEE electron device letters. 2005, Vol 26, Num 4, pp 252-254, issn 0741-3106, 3 p.Article

Formation of ytterbium silicide nanowires on Si(0 0 1)KUZMIN, M; LAUKKANEN, P; PERÄLÄ, R. E et al.Applied surface science. 2004, Vol 222, Num 1-4, pp 394-398, issn 0169-4332, 5 p.Article

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