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STM study of di-indenoperylene molecules on Cu(1 0 0) surfaces: Mobility, stability and epitaxyXUE NA ZHANG; DE OTEYZA, Dimas G; WAKAYAMA, Yutaka et al.Surface science. 2009, Vol 603, Num 21, pp 3179-3183, issn 0039-6028, 5 p.Article

The asymptotic scaling limit of point island models for epitaxial growthRATSCH, C; LANDA, Y; VARDAVAS, R et al.Surface science. 2005, Vol 578, Num 1-3, pp 196-202, issn 0039-6028, 7 p.Article

Epitaxial integration of perovskite-based multifunctional oxides on siliconBAEK, Seung-Hyub; EOM, Chang-Beom.Acta materialia. 2013, Vol 61, Num 8, pp 2734-2750, issn 1359-6454, 17 p.Article

Deposition of copper clusters on the Cu(111) surfaceALAMANOVA, Denitsa; GRIGORYAN, Valeri G; SPRINGBORG, Michael et al.Surface science. 2008, Vol 602, Num 7, pp 1413-1422, issn 0039-6028, 10 p.Article

Morphological and optical properties of p-type GaAs(001) layers doped with siliconLAMAS, T. E; MARTINI, S; DA SILVA, M. J et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 701-703, issn 0959-8324, 3 p.Conference Paper

On the formation of Si nanowires by molecular beam epitaxyWERNER, Peter; ZAKHAROV, Nikolai D; GERTH, Gerhard et al.International journal of materials research. 2006, Vol 97, Num 7, pp 1008-1015, issn 1862-5282, 8 p.Article

Heteroepitaxy of cubic GaNTRAMPERT, A; BRANDT, O; YANG, H et al.Journal de physique. III (Print). 1997, Vol 7, Num 12, pp 2309-2316, issn 1155-4320Conference Paper

Recent progress in thin film epitaxy across the misfit scale (2011 Acta Gold Medal Paper)NARAYAN, J.Acta materialia. 2013, Vol 61, Num 8, pp 2703-2724, issn 1359-6454, 22 p.Article

Novel high temperature metal organic chemical vapor deposition vertical rotating-disk reactor with multizone heating for GaN and related materialsWALKER, R; GURARY, A. I; YUAN, C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 35, Num 1-3, pp 97-101, issn 0921-5107Conference Paper

A new substrate holder for liquid phase epitaxy growth of Hg1-xCdxTe from Hg-rich solutionsCHAVADA, F. R; GARG, A. K; SHIV KUMAR et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 36-38, issn 0921-5107Conference Paper

The Investigation of Crystallization of a-Si Films Deposited on Different Orientations by Solid Phase Epitaxy Process = Untersuchungen zur Kristallisation von a-Si-Schichten, abgeschieden auf unterschiedlichen Orientierungen, durch FestphasenepitaxieLEE, Kyuyoul; KIM, Chungkeun; CHANG, Youngchul et al.Praktische Metallographie. 2009, Vol 46, Num 10, pp 537-551, issn 0032-678X, 15 p.Article

L'homoépitaxie de carbure de silicium = Homoepitaxy of silicon carbideDI CIOCCIO, L; NEYRET, E.Le Vide (1995). 2000, Vol 55, Num 298, pp 380-405, issn 1266-0167Article

In situ characterization of rare earth-CdTe heterostructures by ion beam analysisGROS, P; FIAT, G; BRUN, D et al.Thin solid films. 1994, Vol 249, Num 2, pp 266-270, issn 0040-6090Article

Characterization of compositional oscillations in InGaAs films induced by MBE cell configuration and substrate rotationSAMEY, W. L; SVENSSON, S. P.Materials characterization. 2007, Vol 58, Num 3, pp 284-288, issn 1044-5803, 5 p.Article

Ultralow temperature ramping rate of LT to HT for the growth of high quality Ge epilayer on Si (100) by RPCVDDA CHEN; ZHONGYING XUE; XING WEI et al.Applied surface science. 2014, Vol 299, pp 1-5, issn 0169-4332, 5 p.Article

Phosphatation de la surface métallique = Phosphating metal surfacesLORIN, G.Galvano-organo (Paris). 1985, Vol 54, Num 555, pp 385-387, issn 0302-6477Article

Role of thermal processes in dewetting of epitaxial Ag(111) film on Si(111)SANDERS, Charlotte E; CHENDONG ZHANG; KELLOGG, Gary L et al.Surface science. 2014, Vol 630, pp 168-173, issn 0039-6028, 6 p.Article

Crystallization of AlON and its effects on the growth and hardness of reactively synthesized VN/AlON nanomultilayerJIANLING YUE; YAN LIU; WENJI ZHAO et al.Scripta materialia. 2006, Vol 55, Num 10, pp 895-898, issn 1359-6462, 4 p.Article

The 17th International Conference on Molecular Beam EpitaxyAKIMOTO, Katzuhiro; SUEMASU, Takashi; OKUMURA, Hajime et al.Journal of crystal growth. 2013, Vol 378, issn 0022-0248, 649 p.Conference Proceedings

Crystal chemistry of interfaces formed between two different non-metallic, inorganic structuresANDEEN, David; LANGE, F. F.International journal of materials research. 2007, Vol 98, Num 12, pp 1222-1229, issn 1862-5282, 8 p.Article

Epitaxial growth of silver nanoislands on the surface of silicon nanowires in ambient airREN LU; YEWU WANG; WEI WANG et al.Acta materialia. 2014, Vol 79, pp 241-247, issn 1359-6454, 7 p.Article

ZnO ultraviolet photodiodes with Pd contact electrodesYOUNG, S. J; JI, L. W; FANG, T. H et al.Acta materialia. 2007, Vol 55, Num 1, pp 329-333, issn 1359-6454, 5 p.Article

Selective epitaxy base transistor (SEBT)BURGHARTZ, J. N; GINSBERG, B. J; MADER, S. R et al.IEEE electron device letters. 1988, Vol 9, Num 5, pp 259-261, issn 0741-3106Article

Morphological stability in epitaxy of semiconductors:Application to optoelectronic monolithically integrated structures = Morphologische Stabilitaet bei der Epitaxie von HalbleiternHERMAN, M.A; ANDERSSON, T.G.Applied physics. A, Solids and surfaces. 1986, Vol 41, Num 3, pp 243-252, issn 0721-7250Article

Unstable epitaxy on vicinal surfacesROST, M; SMILAUER, P; KRUG, J et al.Surface science. 1996, Vol 369, Num 1-3, pp 393-402, issn 0039-6028Article

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