Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("Erbium silicides")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 87

  • Page / 4
Export

Selection :

  • and

The effect of an interfacial oxide layer on the Schottky barrier height of Er-Si contactWU, C. S; SCOTT, D. M; LAU, S. S et al.Journal of applied physics. 1985, Vol 58, Num 3, pp 1330-1334, issn 0021-8979Article

Fabrication and structure of epitaxial Er silicide films on (111) SiARNAUD D'AVITAYA, F; PERIO, A; OBERLIN, J.-C et al.Applied physics letters. 1989, Vol 54, Num 22, pp 2198-2200, issn 0003-6951, 3 p.Article

Observation of a temporal evolution of defected epitaxial erbium silicide layers at room temperatureSAINTENOY, S; WETZEL, P; PIRRI, C et al.Solid state communications. 1996, Vol 98, Num 11, pp 1015-1020, issn 0038-1098, 5 p.Article

Hindered electronic transport in two-dimensional metallic ErSi2 nanoscale islands on Si(111) : An STM studyBRIHUEGA, I; DUPONT-FERRIER, E; MALLET, P et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 20, pp 205309.1-205309.7, issn 1098-0121Article

STM and LEED observations of erbium silicide nanostructures grown on Si(1 0 0) surface: atomic-scale understandingsQUN CAI; JIANSHU YANG; YU FU et al.Applied surface science. 2002, Vol 190, Num 1-4, pp 157-160, issn 0169-4332Conference Paper

Vacancy-induced electronic states in ErSi1.7(0001)STAUFFER, L; MHARCHI, A; SAINTENOY, S et al.The Journal of physics and chemistry of solids. 1997, Vol 58, Num 4, pp 567-572, issn 0022-3697Article

Growth and morphology of epitaxial ErSi1.7 films on Si(111)7×7 studied by scanning tunneling microscopyMARTIN-GAGO, J. A; GOMEZ-ROGRIGUEZ, J. M; VEUILLEN, J. Y et al.Surface science. 1996, Vol 366, Num 3, pp 491-500, issn 0039-6028Article

Effect of oxygen on the growth of epitaxial ErSi2-x films on Si by the reactive deposition techniqueGRIMALDI, M. G; RAVESI, S; SPINELLA, C et al.Applied surface science. 1996, Vol 102, pp 138-141, issn 0169-4332Conference Paper

Frequency shift of the Si-H vibrational modes on erbium silicide measured by HREELSANGOT, T; KOULMANN, J. J; BOLMONT, D et al.Surface science. 1996, Vol 368, Num 1-3, pp 190-195, issn 0039-6028Conference Paper

Hydrogen adsorption on erbium silicide surfaceSAINTENOY, S; WETZEL, P; PIRRI, C et al.Solid state communications. 1995, Vol 94, Num 9, pp 719-723, issn 0038-1098Article

Er-Si (Erbium-Silicon)OKAMOTO, H.Journal of phase equilibria. 1997, Vol 18, Num 4, issn 1054-9714, p. 403Article

Ion beam synthesis of heteroepitaxial erbium silicide layersWU, M. F; VANTOMME, A; PATTYN, H et al.Applied surface science. 1996, Vol 102, pp 184-188, issn 0169-4332Conference Paper

Erbium silicidation on SiGe for advanced MOS applicationDAPHNE YIEW, Q. F; SETIAWAN, Y; LEE, P. S et al.Thin solid films. 2006, Vol 504, Num 1-2, pp 91-94, issn 0040-6090, 4 p.Conference Paper

Effects of Si(001) surface amorphization on ErSi2 thin filmTAN, E. J; KON, M. L; PEY, K. L et al.Thin solid films. 2006, Vol 504, Num 1-2, pp 157-160, issn 0040-6090, 4 p.Conference Paper

X-ray study of Eu-Si and Er-Si compoundsDAKHEL, A. A.Acta physica Polonica. A. 1986, Vol 70, Num 6, pp 791-795, issn 0587-4246Article

Transformations de phase magnétiques dans Er5Si3SAFONOV, V. N; GEL'D, P. V; VERESHCHAGIN, YU. A et al.Fizika tverdogo tela. 1983, Vol 25, Num 11, pp 3471-3473, issn 0367-3294Article

SURFACE MORPHOLOGY OF ERBIUM SILICIDELAU SS; PAI CS; WU CS et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 77-80; BIBL. 9 REF.Article

Scanning tunneling microscopy imaging of facet surfaces of self-organized nanocrystal using metal-coated carbon nanotube tipMURATA, Yuya; KIMURA, Takehiko; MATSUMOTO, Takashi et al.Surface science. 2008, Vol 602, Num 5, issn 0039-6028, L29-L32Article

Characteristics of Schottky barrier silicon nanocluster floating gate flash memorySON, Daeho; KIM, Jeongho; LEE, Kyungsu et al.Thin solid films. 2011, Vol 519, Num 18, pp 6174-6177, issn 0040-6090, 4 p.Article

The characteristics of sub-10 nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistorsJANG, Moongyu; LEE, Seongjae.Thin solid films. 2012, Vol 520, Num 6, pp 2166-2169, issn 0040-6090, 4 p.Article

Evidence of hole-electron quasiparticle interference in ErSi2 semimetal by fourier-transform scanning tunneling spectroscopyVONAU, F; AUBEL, D; GEWINNER, G et al.Physical review letters. 2005, Vol 95, Num 17, pp 176803.1-176803.4, issn 0031-9007Article

Vacancy ordering in self-assembled erbium silicide nanowires on atomically clean Si(001)TSAI, W. C; HSU, H. C; HSU, H. F et al.Applied surface science. 2005, Vol 244, Num 1-4, pp 115-119, issn 0169-4332, 5 p.Conference Paper

Phase relationships and structural, magnetic, and thermodynamic properties of alloys in the pseudobinary Er5Si4-Er5Ge4 systemPECHARSKY, A. O; GSCHNEIDNER, K. A; PECHARSKY, V. K et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 14, pp 144419.1-144419.11, issn 1098-0121Article

In-plane magnetic anisotropy in ErRu2Si2TAKEUCHI, T; KOHYAMA, J; KAWARAZAKI, S et al.Journal of magnetism and magnetic materials. 1998, Vol 177-81, pp 1081-1082, issn 0304-8853, 2Conference Paper

Magnetic properties of ErPd2Si2 from magnetization Mössbauer and neutron diffraction measurementsTOMALA, K; SANCHEZ, J. P; MALAMAN, B et al.Journal of magnetism and magnetic materials. 1994, Vol 131, Num 3, pp 345-355, issn 0304-8853Article

  • Page / 4