Capacitance switching method of eliminating false transients on the Boonton 72B capacitance meter in deep-level transient spectroscopy applicationsCHRISTOFOROU, N; LESLIE, J. D.Measurement science & technology (Print). 1991, Vol 2, Num 2, pp 127-130, issn 0957-0233Article

Problem of increasing the resolution of deep level transient spectroscopyCHIKHRAI, E. V; ABDULLIN, K. A; TYBULEWICZ, A et al.Soviet physics. Semiconductors. 1991, Vol 25, Num 4, pp 453-454, issn 0038-5700Article

System effects in double-channel gated-integrator-based deep-level transient spectroscopyBALASUBRAMANYAM, N; VIKRAM KUMAR.Journal of applied physics. 1988, Vol 64, Num 11, pp 6311-6314, issn 0021-8979Article

An efficient technique for analyzing deep level transient spectroscopy dataDEVRIES, P. D; AZIM KHAN, A.Journal of electronic materials. 1989, Vol 18, Num 4, pp 543-547, issn 0361-5235, 5 p.Article

Investigation of the background in the spectrum of an mos structure obtained by correlated DLTSGMUCOVA, K.Solid-state electronics. 1992, Vol 35, Num 8, pp 1197-1199, issn 0038-1101Article

Annealing behavior of reactive ion etching induced deep levelsMISRA, D; HEASELL, E. L.Journal of the Electrochemical Society. 1990, Vol 137, Num 5, pp 1559-1563, issn 0013-4651Article

A new correlation method for improvement in selectivity of bulk trap measurements from capacitance and voltage transientsDMOWSKI, K.Review of scientific instruments. 1990, Vol 61, Num 4, pp 1319-1325, issn 0034-6748Article

Application of the divisor method to multiple peak DLTS spectraDEVRIES, P. D; AZIM KHAN, A.Journal of electronic materials. 1989, Vol 18, Num 6, pp 763-766, issn 0361-5235Article

Passivation of electronic centres in silicon by hydrogenAMMERLAAN, C. A. J; ZEVENBERGEN, I. S; GREGORKIEWICZ, T et al.SPIE proceedings series. 1998, pp 531-538, isbn 0-8194-2756-X, 2VolConference Paper

Surface photovoltage and deep level transient spectrocopy measurement of the Fe impurities in front-end operations of the IC CMOS processNAUKA, K; GOMEZ, D. A.Journal of the Electrochemical Society. 1995, Vol 142, Num 6, pp L98-L99, issn 0013-4651Article

Modified sample holder for low-temperature deep-level transient spectroscopy, current-voltage and capacitance-voltage measurementsMYBURG, G; MEYER, W. E; AURET, F. C et al.Review of scientific instruments. 1992, Vol 63, Num 3, pp 2101-2102, issn 0034-6748Article

On the relationship between the feedback charge method, charge transient spectroscopy and C-V measurements of semiconductors and insulatorsTHURZO, I; GRENDEL, M.Measurement science & technology (Print). 1992, Vol 3, Num 8, pp 726-731, issn 0957-0233Article

TEM and DLTS investigations of the electrical activity of Σ17 and Σ14 grain boundaries in germaniumWANG, N; HAASEN, P.Physica status solidi. B. Basic research. 1992, Vol 170, Num 2, pp 403-411, issn 0370-1972Article

Interaction of gold-related and irradiation-induced defects in siliconKOTESWARA RAO, K. S. R; KUMAR, V; PREMACHANDRAN, S. K et al.Journal of applied physics. 1991, Vol 69, Num 12, pp 8205-8209, issn 0021-8979Article

Determination of the ionization energy of deep levels from DLTS dataVYVENKO, O. F; BAZLOV, N. V; TSELISHCHEV, S. L et al.Soviet physics. Semiconductors. 1990, Vol 24, Num 12, pp 1369-1371, issn 0038-5700, 3 p.Article

Deep antisite-complex levels in Hg_1-xCd_xTeHANKE, M; HENNIG, D; KASCHTE, A et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 5, pp 1148-1151, issn 0734-211XArticle

A cheap capacitance meter for the measurement of fast transients and suitable for deeplevel transient spectroscopySLIFKIN, M. A; ELY, J.Journal of physics. E. Scientific instruments. 1989, Vol 22, Num 8, pp 664-666, issn 0022-3735, 3 p.Article

Sensitivity analysis of bulk traps detection in analog deep-level transient spectroscopy measurement systems with exponentially weighted averageDMOWSKI, K; JAKUBOWSKI, A.Review of scientific instruments. 1989, Vol 60, Num 1, pp 106-112, issn 0034-6748Article

Conductance transient spectroscopy of metal-semiconductor field effect transistorHARRANG, J. P; TARDELLA, A; ROSSO, M et al.Journal of applied physics. 1987, Vol 61, Num 5, pp 1931-1936, issn 0021-8979Article

Method for measuring deep levels in thin silicon-on-insulator layer without any interface effectsKANG, H. S; AHN, C. G; KANG, B. K et al.Journal of the Electrochemical Society. 1998, Vol 145, Num 10, pp 3581-3585, issn 0013-4651Article

Digital averaging and recording of DLTS signalsKOLEV, P; DEEN, M. J; ALBERDING, N et al.SPIE proceedings series. 1997, pp 377-388, isbn 0-8194-2765-9Conference Paper

An efficient and low cost optical excitation system : application to deep-level spectroscopyDUBECKY, F; NOVAK, J; KORDOS, P et al.Measurement science & technology (Print). 1993, Vol 4, Num 4, pp 538-540, issn 0957-0233Article

Deep levels associated with oxidation induced stacking faults in n-type siliconKANIEWSKI, J; KANIEWSKA, M; PEAKER, A. R et al.Applied physics letters. 1992, Vol 60, Num 3, pp 359-361, issn 0003-6951Article

Identification of band-gap states by deep level transient spectroscopy on radioactive probes : the case of Au and Pt in siliconPETERSEN, J. W; NIELSEN, J.Applied physics letters. 1990, Vol 56, Num 12, pp 1122-1124, issn 0003-6951Article

Device geometry and temperature dependence of deep level transient spectroscopy spectra of GaAs metal-semiconductor field-effect transistorZHAO, J. H.Journal of applied physics. 1990, Vol 67, Num 8, pp 3895-3897, issn 0021-8979Article