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Heterojuntion band discontinuities and tunable band offsets : building blocks for bandgap engineeringCAPASSO, F.Applied surface science. 1992, Vol 56-58, pp 723-732, issn 0169-4332, bConference Paper

Internally detected electron photoexcitation spectroscopy on heterostructuresCOLUZZA, C; NEGLIA, A; BENNOUNA, A et al.Applied surface science. 1992, Vol 56-58, pp 733-737, issn 0169-4332, bConference Paper

Understanding and controlling semiconductor interfaces : spectroscopy and spectromicroscopyMARGARITONDO, G; MCKINLEY, J. T; RIOUX, D et al.Applied surface science. 1992, Vol 56-58, pp 713-722, issn 0169-4332, bConference Paper

Control of Ge homojunction band offsets via ultrathin Ga-As dipole layersMCKINLEY, J. T; KWU, Y; KOLTENBAH, B. E. C et al.Applied surface science. 1992, Vol 56-58, pp 762-765, issn 0169-4332, bConference Paper

Electronic states in semiconductor heterostructuresBASTARD, G; BRUM, J. A.IEEE journal of quantum electronics. 1986, Vol 22, Num 9, pp 1625-1644, issn 0018-9197Article

On the formation of semiconductor interfacesFLORES, F; TEJEDOR, C.Journal of physics. C. Solid state physics. 1987, Vol 20, Num 2, pp 145-175, issn 0022-3719Article

Electrical barriers at semiconductor interfaces : Some reflections and future challengesWILLIAMS, R. H; TENG, K. S; WILKS, S. P et al.Journal de physique. IV. 2006, Vol 132, pp 41-47, issn 1155-4339, 7 p.Conference Paper

Silicon nitride/semiconductor interface state density as a function of the insulator stoichiometryBAGNOLI, P. E; PICCIRILLO, A; VALENTI, P et al.Applied surface science. 1992, Vol 56-58, pp 881-887, issn 0169-4332, bConference Paper

Theoretical approaches of semiconductor interfaces and of their defects : recent developmentsPRIESTER, C.Journal de physique 3, Applied physics, materials science, fluids, plasma and instrumentation. 1991, Vol 1, Num 4, pp 481-496Article

Early stages of GaAs-Ge (110) interface formationMUNOZ, A; SANCHEZ-DEHESA, J; FLORES, F et al.Europhysics letters (Print). 1986, Vol 2, Num 5, pp 385-391, issn 0295-5075Article

A finite superlattice with the embedded quantum wellKUCHARCZYK, R; STESLICKA, M.Solid state communications. 1992, Vol 81, Num 7, pp 557-561, issn 0038-1098Article

MOS interface states: overview and physicochemical perspectivePOINDEXTER, E. H.Semiconductor science and technology. 1989, Vol 4, Num 12, pp 961-969, issn 0268-1242, 9 p.Article

Transitions entre trous légers et lourds et propriétés des états des limitesSOKOL'SKIJ, A. V; SURIS, R. A.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 5, pp 866-870, issn 0015-3222Article

Improvement of interface electronic properties of GaF3/GaAs MIS structuresRICARD, H; AIZAWA, K; ISHIWARA, H et al.Applied surface science. 1992, Vol 56-58, pp 888-893, issn 0169-4332, bConference Paper

Influence of thin metallic interlayers on the CdS/InP(110) valence band offsetMAIERHOFER, C; ZAHN, D. R. T; EVANS, D. A et al.Applied surface science. 1992, Vol 56-58, pp 738-745, issn 0169-4332, bConference Paper

Interface states in modulation-doped In0.52Al0.48As/In0.53Ga0.47As heterostructuresWON-PYO HONG; JAE-EUNG OH; BHATTACHARYA, P. K et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 10, pp 1585-1590, issn 0018-9383Article

Excitons near interfaces of polar-nonpolar crystals with srrong interactions between the excitons and optical phononsHONG SUN; SHI WEI GU.Physical review. B, Condensed matter. 1988, Vol 38, Num 18, pp 13271-13276, issn 0163-1829Article

Gradient expansion of the distribution function in the two-dimensional SOS modelDUDOWICZ, J; STECKI, J.Journal of physics. A, mathematical and general. 1985, Vol 18, Num 16, pp 3205-3215, issn 0305-4470Article

Origin and evolution of photoluminescence from Si nanocrystals embedded in a SiO2 matrixWANG, X. X; ZHANG, J. G; DING, L et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 19, pp 195313.1-195313.6, issn 1098-0121Article

Calculation of surface charge noise at the Si-SiO2 interfaceGHIBAUDO, G.Physica status solidi. A. Applied research. 1987, Vol 104, Num 2, pp 917-930, issn 0031-8965Article

Investigations of interface states in Si/Si-oxynitride/Al structures using DLTSUFERT, K.-D; ECKE, W; MANZEL, M et al.Physica status solidi. A. Applied research. 1986, Vol 98, Num 1, pp K69-K72, issn 0031-8965Article

Théorie de fluctuation pour les états de surface des structures MOS avec distribution spatiale de la charge de l'oxydeUSEINOV, R. G; ZEBREV, G. I.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 11, pp 2002-2007, issn 0015-3222Article

Correlation between fixed charge and capacitance peaks in silicon nanocrystal metal-insulator-semiconductor devicesFLYNN, C; KÖNIG, D; PEREZ-WURFL, I et al.Semiconductor science and technology. 2010, Vol 25, Num 4, issn 0268-1242, 045011.1-045011.8Article

Insight into the local density of states at Si sites at the submonolayer Si/Ge(001)-2 x 1 interface from Si KLV Auger spectroscopyUNSWORTH, P; WEIGHTMAN, P.Journal of physics. Condensed matter (Print). 2010, Vol 22, Num 8, issn 0953-8984, 085006.1-085006.5Article

Direct biofunctionalization of semiconductors : A surveySTUTZMANN, Martin; GARRIDO, Jose Antonio; EICKHOFF, Martin et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 14, pp 3424-3437, issn 1862-6300, 14 p.Article

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