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On Flat-band voltage dependence on channel length in short-channel threshold modelHUANG, J. S. T; SCHRANKLER, J. W.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 6, issn 0018-9383, p. 1226Article

Shallow junction for 0.1 μm n-type metal-oxide semiconductor devicesWATTS, R. K; LUFTMAN, H. S; BAIOCCHI, F. A et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 515-523, issn 0734-211XConference Paper

Dual-transistor method to determine threshold-voltage shifts due to oxide-trapped charge and interface traps in metal-oxide-semiconductor devicesFLEETWOOD, D. M.Applied physics letters. 1989, Vol 55, Num 5, pp 466-468, issn 0003-6951, 3 p.Article

Determination of the line edge roughness specification for 34 nm devicesLINTON, T; CHANDHOK, M; RICE, B. J et al.IEDm : international electron devices meeting. 2002, pp 303-306, isbn 0-7803-7462-2, 4 p.Conference Paper

On the piezoactivity of Si MOS structuresBURY, P; DURCEK, J; SAKALAUSKAS, K et al.Physica status solidi. A. Applied research. 1986, Vol 95, Num 2, pp K207-K209, issn 0031-8965Article

Thermal stresses in square-patterned GaAs/Si : a finite-element studyLINGUINIS, E. H; HAEGEL, N. M; KARAM, N. H et al.Applied physics letters. 1991, Vol 59, Num 26, pp 3428-3430, issn 0003-6951Article

Constant bias-temperature and constant charge-temperature agings for silicon oxide films of MOS devicesJENN-GWO HWU; JIN-BOR CHUANG; SHYH-LIANG FU et al.Applied physics. A, Solids and surfaces. 1989, Vol 48, Num 4, pp 377-383, issn 0721-7250Article

EPR and TSCR investigations of implanted Al-SiO₂-Si systems treated with RF plasma discharge = Etudes EPR et TSCR de systèmes d'ions implantés dans Al-SiO₂-Si traités par décharge RF (radio fréquence) de PlasmaLYSENKO, V. S; NAZAROV, A. N; VALIEV, S. A et al.Physica status solidi. A. Applied research. 1989, Vol 113, Num 2, pp 653-665, issn 0031-8965Article

Roles of corners in matching of linear MOS capacitorsRAJINDER SINGH; BHATTACHARYYA, A. B.IEEE transactions on circuits and systems. 1989, Vol 36, Num 3, pp 467-469, issn 0098-4094, 3 p.Article

Effects of high pressure on silicon metal-oxide-semiconductor structuresCRUMBAKER, T. E; SITES, J. R; SPAIN, I. L et al.Journal of applied physics. 1989, Vol 65, Num 6, pp 2328-2331, issn 0021-8979Article

Matching properties of linear MOS capacitorsRAJINDER SINGH; BHATTACHARYYA, A. B.IEEE transactions on circuits and systems. 1989, Vol 36, Num 3, pp 465-467, issn 0098-4094, 3 p.Article

Surface-micromachined PbTiO₃ pyroelectric detectorsPOLLA, D. L; CHIAN-PING YE; TAMAGAWA, T et al.Applied physics letters. 1991, Vol 59, Num 27, pp 3539-3541, issn 0003-6951Article

Hot-carrier light emission from silicon metal-oxide-semiconductor devicesHERZOG, M; KOCH, F.Applied physics letters. 1988, Vol 53, Num 26, pp 2620-2622, issn 0003-6951Article

Prism-coupled light emission from tunnel junctions containing interface roughness: experimentWATANABE, J; TAKEUCHI, A; UEHARA, Y et al.Physical review. B, Condensed matter. 1988, Vol 38, Num 18, pp 12959-12965, issn 0163-1829Article

Prism-coupled light emission from tunnel junctions containing interface roughness: theoryTAKEUCHI, A; WATANABE, J; UEHARA, Y et al.Physical review. B, Condensed matter. 1988, Vol 38, Num 18, pp 12948-12958, issn 0163-1829, 11 p.Article

Si MOS photodetectors as detectors of hydrogenKOVALEVSKAYA, G. G; MEREDOV, M. M; RUSSU, E. V et al.Technical physics. 1993, Vol 38, Num 2, pp 149-151, issn 1063-7842Article

Electric field effect on characteristics of indium antimonide MOS structuresDAVYDOV, V. N; PETROV, A. S.Physica status solidi. A. Applied research. 1986, Vol 98, Num 1, pp 253-261, issn 0031-8965Article

Fowler-nordheim current oscillations analysis of metal/ultra-thin oxide/semiconductor structuresKHLIFI, Y; KASSMI, K; ROUBI, L et al.Physica status solidi. A. Applied research. 2000, Vol 182, Num 2, pp 737-753, issn 0031-8965Article

Temperature dependence of electron trapping in metal-oxide-semiconductor devices as a function of the injection modeGILDENBLAT, G. S; HUANG, C.-L; GROT, S. A et al.Journal of applied physics. 1988, Vol 64, Num 4, pp 2150-2152, issn 0021-8979Article

Infos 2005: Proceedings of the 14th Biennal Conference on Insulating Films on Semiconductors, June 22-24, 2005, Leuven, BelgiumGROESENEKEN, Guido; KACZER, Ben.Microelectronic engineering. 2005, Vol 80, issn 0167-9317, 491 p.Conference Proceedings

Local bond breaking via STM-induced excitations : the role of temperaturePERSSON, B. N. J; AVOURIS, P.Surface science. 1997, Vol 390, Num 1-3, pp 45-54, issn 0039-6028Conference Paper

A breakdown voltage model for implanted resurf p-LDMOS device on n⁺ buried layerMING-JIANG ZHOU; VAN CALSTER, A.Solid-state electronics. 1994, Vol 37, Num 7, pp 1383-1385, issn 0038-1101Article

Numerical extraction of ultra-shallow one-dimensional metal-oxide-semiconductor doping from capacitance-voltage measurementsOSSE, A. L. M; KRUSIUS, J. P.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 485-490, issn 0734-211XConference Paper

Anomalous drain-induced barrier lowering in short channel NMOS devices at 77KDEEN, M. J.Electronics Letters. 1990, Vol 26, Num 18, pp 1493-1495, issn 0013-5194Article