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Results 1 to 25 of 317

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GaAs-on-Si MSM photodetector : FET receiver characterization and reliabilityTING FENG; DIMOULAS, A; CHRISTOU, A et al.SPIE proceedings series. 1998, pp 53-57, isbn 0-8194-2727-6Conference Paper

Gold-chloroIndium phthalocyanine (CIInPc)-metal sandwich structuresHOOPER, P. D; NEWTON, M. I; MCHALE, G et al.International journal of electronics. 1996, Vol 81, Num 4, pp 371-376, issn 0020-7217Conference Paper

Tera-hertz GaAs metal-semiconductor-metal photodetectors with 25 nm finger spacing and finger widthCHOU, S. Y; LIU, Y; FISCHER, P. B et al.Applied physics letters. 1992, Vol 61, Num 4, pp 477-479, issn 0003-6951Article

Analysis of a GaAs metal-semiconductor-metal (MSM) photodetector with 0.1-μm finger spacingKOSCIELNIAK, W. C; LITTLEJOHN, M. A; PELOUARD, J.-L et al.IEEE electron device letters. 1989, Vol 10, Num 5, pp 209-211, issn 0741-3106Article

Extremely radiation stable rectifiers and photovoltaic converters based at thin-film heterojunctions of intrinsic semiconductorsVOLOVICHEV, I. N; GUREVICH, Yu. G; KOSHKIN, V. M et al.International conference on microelectronic. 1997, pp 323-326, isbn 0-7803-3664-X, 2VolConference Paper

New method for grafting a thin film metal-semiconductor-metal photodetector with a transimpedance amplifier and applications to multichip module packagingMORRISON, C. B; ZHENG ZHU; STEINBERG, J et al.SPIE proceedings series. 1998, pp 16-22, isbn 0-8194-2727-6Conference Paper

Hybrid integrated optoelectronics : Thin film devices bonded to host substratesJOKERST, N. M.International journal of high speed electronics and systems. 1997, Vol 8, Num 2, pp 325-356Article

An analytical expression for the electric field in MSM structuresGVOZDIC, D. M; RADUNOVIC, J. B; ELAZAR, J. M et al.International journal of infrared and millimeter waves. 1993, Vol 14, Num 7, pp 1485-1493, issn 0195-9271Article

Suppressing long tail in impulse response of MSM photodetectors using slow hole current subtractionSEO, S.-W; JOKERST, N. M.Electronics Letters. 2007, Vol 43, Num 15, pp 827-828, issn 0013-5194, 2 p.Article

Pulse response of a resonant cavity enhanced metal-semiconductor-metal photodetectorNIKOLIC, P. L; GVOZDIC, D. M; RADUNOVIC, J. B et al.International conference on microelectronic. 1997, pp 327-330, isbn 0-7803-3664-X, 2VolConference Paper

The influence of electron intervalley transfer on response pulse width of the MSM photodetectorGVOZDIC, D. M; RADUNOVIC, J. B.International journal of infrared and millimeter waves. 1996, Vol 17, Num 6, pp 1001-1009, issn 0195-9271Article

Integration of inverted InGaAs MSM array on Si substrate through low temperature wafer bondingWU, P; LIAO, J; HUANG, Z. Rena et al.Electronics letters. 2012, Vol 48, Num 1, pp 38-39, issn 0013-5194, 2 p.Article

Characterization of ZnO metal-semiconductor-metal ultraviolet photodiodes with palladium contact electrodesYOUNG, S. J; JI, L. W; CHUANG, R. W et al.Semiconductor science and technology. 2006, Vol 21, Num 10, pp 1507-1511, issn 0268-1242, 5 p.Article

Time-resolved photocurrent response of metal-semiconductor-metal photodetectors to double-pulse excitationKLINGENSTEIN, M; KUHL, J; ROSENZWEIG, J et al.Applied physics letters. 1993, Vol 63, Num 20, pp 2780-2782, issn 0003-6951Article

A 1.8 Gb/s GaAs optoelectronic universal switch LSI with monolithically integrated photodetector and laser driverYAMANAKA, N; KIKUCHI, S; TAKADA, T et al.Journal of lightwave technology. 1992, Vol 10, Num 8, pp 1162-1166, issn 0733-8724Article

Nanoscale metal-semiconductor-metal photodetectors with subpicosecond response time fabricated using electron beam lithographyLIU, M. Y; CHOU, S. Y; HSIANG, T. Y et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2932-2935, issn 1071-1023Conference Paper

Two-dimensional ensemble Monte Carlo calculation of pulse responses of submicrometer GaAs metal-semiconductor-metal photodetectorsSANO, E.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 9, pp 2075-2081, issn 0018-9383Article

A device model for metal-semiconductor-metal photodetectors and its applications to optoelectronic integrated circuit simulationSANO, E.I.E.E.E. transactions on electron devices. 1990, Vol 37, Num 9, pp 1964-1968, issn 0018-9383, 5 p.Article

Performance of a near-infrared GaAs metal-semiconductor-metal (MSM) photodetector: with IslandsKOSCIELNIAK, W. C; KOLBAS, R. M; LITTLEJOHN, M. A et al.IEEE electron device letters. 1988, Vol 9, Num 9, pp 485-487, issn 0741-3106Article

Etch enhanced low capacitance, large area thin film InGaAs metal-semiconductor-metal photodetectorsSEO, Sang-Woo; CHA, Cheolung; CHO, Sang-Yeon et al.Lasers and Electro-optics Society. 2004, isbn 0-7803-8557-8, 2Vol, Vol1, 222-223Conference Paper

Thin film inverted MSM photodetector with top bonding pads for nano paste metallizationKONDO, Taka-Yuki; ONISHI, Hajime; NOMURA, Hiroshi et al.Lasers and Electro-optics Society. 2004, isbn 0-7803-8557-8, 2Vol, Vol2, 463-464Conference Paper

Polyimide waveguide components and interconnects in advanced communication systemsCALLENDER, C. L; ROBITAILLE, L; NOAD, J. P et al.SPIE proceedings series. 1998, pp 112-121, isbn 0-8194-2717-9Conference Paper

Differential MSM photoconductive-switch-type sample and hold circuit for reducing signal feedthroughYONEYAMA, M; SHIBATA, T.Electronics Letters. 1994, Vol 30, Num 19, pp 1565-1567, issn 0013-5194Article

Wavelength selective metal-semiconductor-metal photodetector with integrated Fabry-Perot resonator for high bandwidth receiversPRANK, U; KOWALSKY, W.Japanese journal of applied physics. 1993, Vol 32, Num 1B, pp 574-577, issn 0021-4922, 1Conference Paper

Ultrafast metal-semiconductor-metal photodiodes fabricated on low-temperature GaAsKLINGENSTEIN, M; KUHL, J; NÖTZEL, R et al.Applied physics letters. 1992, Vol 60, Num 5, pp 627-629, issn 0003-6951Article

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