STRUCTURE HETEROGENE POUR LASERS A INJECTION A BASE DE PB_1-XSN_XSEZASAVITSKIJ II; ZLOMANOV VP; KASHKUR IP et al.1981; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1981; VOL. 51; NO 5; PP. 943-948; BIBL. 12 REF.Article

Expression for the Fermi energy in narrow-bandgap semiconductorsJOYCE, W. B.IEEE journal of quantum electronics. 1983, Vol 19, Num 11, pp 1625-1627, issn 0018-9197Article

Pb_1-xSn_xBe/PbSe heterostructure lasersBRYANT, F. J; QADEER, A; REED, J et al.IEE proceedings. Part I. Solid-state and electron devices. 1983, Vol 130, Num 6, pp 287-291, issn 0143-7100Article

Mesa-stripe Pb_1-xSn_xSe tunable diode lasersBUTLER, J. F; REEDER, R. E; LINDEN, K. J et al.IEEE journal of quantum electronics. 1983, Vol 19, Num 10, pp 1520-1525, issn 0018-9197Article

LIQUID PHASE EPITAXIAL GROWTH OF PB_1-Y SN_Y SE.KASAI I; BASSETT DW.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 27; PP. 215-220; BIBL. 17 REF.Article

CONCENTRATION ET MOBILITE DES PORTEURS DANS LES ALLIAGES DES SYSTEMES PB-SN-TE ET PB-SN-SE APRES EXTRUSIONEFIMOVA BA; KROTOVA EF; ZHAROV VF et al.1981; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1981; VOL. 17; NO 12; PP. 2180-2183; BIBL. 6 REF.Article

NIVEAUX D'ENERGIE DES DEFAUTS PROPRES DANS LES CRISTAUX DE PB_1-XSN_XSE DU TYPE NKUCHERENKO IV; SVISTOV AE; SHOTOV AP et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 5; PP. 890-896; BIBL. 10 REF.Article

PHOTOELECTRIC SPECTRA OF PB_1-XSN_XSE SINGLE CRYSTALS IN COMPARISON WITH PBSE AND SNSE SPECTRALIEBEGALL A; SCHWARZ W.1981; NUOVO CIMENTO B; ISSN 0369-3554; ITA; DA. 1981; VOL. 66; NO 2; PP. 173-178; ABS. ITA/RUS; BIBL. 13 REF.Article

ETUDE DE LA FORME DE LA SURFACE DE FERMI D'APRES LA VARIATION ANGULAIRE DE L'EFFET DE SHUBNIKOV-DE HAAS DANS LES CRISTAUX PB_1-XSN_XSE (X>0,3)KUCHERENKO IV; SVISTOV AE; SHOTOV AP et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 11; PP. 2111-2115; BIBL. 8 REF.Article

SUBLIMATION GROWTH OF PSEUDOBINARY PB_0.93SN_0.07SE CRYSTALS WITH CONTROLLED CARRIER CONCENTRATION.DANIEL DR; MAIER H; PREIER H et al.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 38; NO 1; PP. 145-146; BIBL. 6 REF.Article

GROWTH AND MORPHOLOGY OF PB_1-YSN_YSE AND (PBSE)_1-Z(SNTE)_Z ALLOYS FROM THE VAPOR PHASE.KASAI I; DANIEL DR; MAIER H et al.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 23; NO 3; PP. 201-206; BIBL. 26 REF.Article

EPITAXIAL PBSE AND PB_1-XSN_XSE: GROWTH AND ELECTRICAL PROPERTIES.HOHNKE DK; KAISER SW.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 2; PP. 892-897; BIBL. 37 REF.Article

Fast optical switching and optical bistability in a PbSnSe étalonREID, J. J. E; KAR, A. K; MACKENZIE, H. A et al.Applied physics letters. 1987, Vol 51, Num 16, pp 1215-1217, issn 0003-6951Article

On time delays in lead salt semiconductor diode lasersTAYLOR, S. E.Applied physics. A, Solids and surfaces. 1986, Vol 39, Num 2, pp 91-94, issn 0721-7250Article

Metal clad Pb_1-xSn_xSe/Pb_1-x-yEu_ySn_xSe distributed feedback lasersSHANI, Y; KATZIR, A; TACKE, M et al.IEEE journal of quantum electronics. 1988, Vol 24, Num 11, pp 2135-2137, issn 0018-9197Article

Dispersive optical bistability in a PbSnSe etalon at room temperatureREID, J. J. E; KAR, A. K; MACKENZIE, H. A et al.Optics communications. 1987, Vol 64, Num 2, pp 175-180, issn 0030-4018Article

AUGER TRANSITIONS IN NARROW-GAP SEMICONDUCTORS WITH LAX BAND STRUCTUREBENESLAVSKII SD; DMITRIEV AV.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 39; NO 7; PP. 811-814; BIBL. 11 REF.Article

EFFET DOPANT DE L'ETAIN DANS LES SOLUTIONS SOLIDES DE PB_1-XSN_XSE ET PB_1-YSN_YSPROKOF'EVA LV; VINOGRADOVA MN; ZARUBO SV et al.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 11; PP. 2201-2204; BIBL. 3 REF.Article

LE SPECTRE D'ENERGIE DES ETATS D'IMPURETE DE SN ET GE DANS LES SOLUTIONS SOLIDES A BASE DE CHALCOGENURES DE PLOMBPROKOF'EVA LV; ZARUBO SV; VINOGRADOVA MN et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 12; PP. 2136-2140; BIBL. 6 REF.Article

STUDY OF THE THERMOELECTRIC PROPERTIES OF N-PB⁰,85)-SN⁰,15)SE USED IN THE RESPONSIVE LEGS OF THERMOELECTRIC CONVERTERSAZIMOV SA; ABDURAIMOV SH B; ATAKULOV SH B et al.1981; GELIOTEHNIKA (TASKENT); ISSN 0130-0997; SUN; DA. 1981; NO 3; PP. 14-18; BIBL. 9 REF.Article

INVERSION DES SOUS-NIVEAUX DE LANDAU DECOMPOSES PAR LE SPIN DANS LA TRANSITION A L'ETAT SANS BANDE INTERDITE DES COMPOSES PB_1-XSN_XSEBRANDT NB; KOVALEV BB; PONOMAREV YA G et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 1; PP. 61-64; BIBL. 8 REF.Article

IR ABSORPTION IN P-TYPE PB_0.97SN_0.03SEJAIN AK; GUPTA BK; AGNIHOTRI OP et al.1981; J. PHYS. CHEM. SOLIDS; ISSN 0022-3697; USA; DA. 1981; VOL. 42; NO 11; PP. 985-986; BIBL. 14 REF.Article

Particularités de la diffusion des trous par l'impureté étain isovalente dans PbSe avec abaissement considérable de la conductivitéGURIEVA, E. A; PROKOF'EVA, L. V; RAVIN, YU. I et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 10, pp 1746-1749, issn 0015-3222Article

Crystal lattice and band structure of the intermediate high-pressure phase of PbSeSTRELTSOV, S. V; MANAKOV, A. Yu; VOKHMYANIN, A. P et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 38, issn 0953-8984, 385501.1-385501.4Article

Magnetic susceptibility and thermoelectric power of narrow-gap Pb_0.82Sn_0.18Se semiconductors doped with manganeseLASHKAREV, G. V; BRODOVOI, A. V; RADCHENKO, M. V et al.Soviet physics. Semiconductors. 1991, Vol 25, Num 5, pp 574-575, issn 0038-5700Article