Low ohmic multilayer contacts in lead-tin-telluride diode lasersHERRMANN, K; SUMPF, B; BÖHME, D et al.Crystal research and technology (1979). 1983, Vol 18, Num 8, pp 1083-1089, issn 0232-1300Article

The far field of PbSnTe injection lasersSHANI, Y; HARDY, A; KAPON, E et al.IEEE journal of quantum electronics. 1984, Vol 20, Num 11, pp 1267-1270, issn 0018-9197Article

LIQUID-PHASE-EPITAXY HOMOSTRUCTURE PB_0-85SN_0-15 TE DIODE LASER WITH CONTROLLED CARRIER CONCENTRATIONORON M; ZUSSMAN A.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 1; PP. 7-9; BIBL. 8 REF.Article

ACCUMULATION ET TEMPS DE RELAXATION DES ELECTRONS PAR EFFET PHOTOELECTRIQUE DANS PB⁰,78)SN⁰,22)TEVUL BM; VORONOVA ID; GRISHECHKINA SP et al.1981; PIS'MA ZH. EKSPER. TEOR. FIZ.; SUN; DA. 1981; VOL. 33; NO 6; PP. 346-350; BIBL. 7 REF.Article

Théorie de la variation thermique du courant de seuil des lasers à injection à base de semiconducteurs du type Pb1-xSnxTeLUBASHEVSKIJ, I. A; RYZHIJ, V. I; MIZERINA, N. YU et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 9, pp 1631-1634, issn 0015-3222Article

Effects of lateral confinement on reflectivity of buried heterostructure PbSbTe lasersHANDELMAN, D; HARDY, A; KATZIR, A et al.Applied optics. 1987, Vol 26, Num 1, pp 12-14, issn 0003-6935Article

Supersymmetry in heterojunctions: band-inverting contact on the basis of Pb_1-xSn_xTe and Hg_1-xCd_xTePANKRATOV, O. A; PAKHOMOV, S. V; VOLKOV, B. A et al.Solid state communications. 1987, Vol 61, Num 2, pp 93-96, issn 0038-1098Article

On the behaviour of the thresholdt current densities in dual-wavelength Pb_1-xSn_xTe injection lasersHERRMANN, K; TOMM, J. W; JALYSCHKO, A et al.Physica status solidi. A. Applied research. 1983, Vol 80, Num 2, pp K113-K116, issn 0031-8965Article

The influence of hydrostatic pressure on the I-U-characterisitc of Pb_1-xSn_xTe diodesHOERSTEL, W; KRAAK, W; RUDOLPH, A. F et al.Physica status solidi. A. Applied research. 1983, Vol 80, Num 2, pp K193-K197, issn 0031-8965Article

PbSnTe diode lasers incorporating passive waveguidesKAPON, E; ZUSSMAN, A; KATZIR, A et al.Journal of applied physics. 1984, Vol 56, Num 11, pp 3336-3337, issn 0021-8979Article

VARIATIONS DE L'HOMOGENEITE DES SOLUTIONS SOLIDES DE TELLURURE DE PLOMB-TELLURURE D'ETAIN LORS DU RECUIT AVEC GRADIENT DE TEMPERATUREDEDEGKAEV TT; LAGKUEV D KH; MOSHNIKOV VA et al.1983; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1983; VOL. 53; NO 2; PP. 404-406; BIBL. 4 REF.Article

ETUDE DE LA NATURE DE L'ABSORPTION ADDITIONNELLE DE PB_1-XSN_XTE DANS LA REGION SPECTRALE DE GRANDE LONGUEUR D'ONDEGREKOV YU B; PRUDNIKOV VV; SEMIKOLENOVA NA et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 10; PP. 2057-2060; BIBL. 4 REF.Article

SUSCEPTIBILITE MAGNETIQUE DES SEMICONDUCTEURS A BANDE INTERDITE ETROITEFAL'KOVSKIJ LA; BRODOVOJ AV; LASHKAREV GV et al.1981; Z. EKSP. TEOR. FIZ.; ISSN 0044-4510; SUN; DA. 1981; VOL. 80; NO 1; PP. 334-348; ABS. ENG; BIBL. 20 REF.Article

DOPING AND ELECTRICAL PROPERTIES OF CD-DOPED CRYSTALS AND LPE LAYERS OF PB_1-XSN_XTESILBERG E; ZEMEL A.1982; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1982; VOL. 15; NO 2; PP. 275-288; BIBL. 28 REF.Article

RECOMBINATION OF PHOTOCARRIERS IN LEAD-TIN TELLURIDEWEISER K; RIBAK E; KLEIN A et al.1981; INFRARED PHYS.; ISSN 0020-0891; GBR; DA. 1981; VOL. 21; NO 3; PP. 149-154; BIBL. 27 REF.Article

PROPRIETES ELECTROPHYSIQUES ET OPTIQUES DES HETEROJONCTIONS PB_1-XSN_XTE(IN)-N-PBTE-PLIDORENKO NS; DASHEVSKIJ ZM; KOTEL'NIKOV VA et al.1981; DOKL. AKAD. NAUK SSSR; ISSN 0002-3264; SUN; DA. 1981; VOL. 256; NO 3; PP. 580-582; BIBL. 9 REF.Article

ELECTRICAL TRANSPORT PROPERTIES OF EPITAXIAL FILMS OF PB_1-XSN_XTEDAWAR AL; KUMAR P; PARADKAR SK et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 73; NO 2; PP. 503-507; ABS. GER; BIBL. 18 REF.Article

SELF-DIFFUSION OF SN AND TE IN PB_0.8SN_0.2TE AT A TEMPERATURE OF 600^OCTANG HG; LUNN B; SHAW D et al.1981; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1981; VOL. 16; NO 12; PP. 3508-3510; BIBL. 7 REF.Article

THE MN²⁺ ION SPECTRA IN PB_XSN_1-XTE ALLOYSHEJWOWSKI T; SUBOTOWICZ M.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 106; NO 1; PP. 373-377; BIBL. 20 REF.Article

TUNNELING-DETERMINED THRESHOLD CURRENT IN PB_1-XSN_XTE DIODE LASERSEGER D; ORON M; ZEMEL A et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 6; PP. 471-473; BIBL. 24 REF.Article

TUNNELLING CURRENT IN PBTE-PB⁰,8)SN⁰,2) TE HETEROJUNCTIONSZEMEL A; EGER D.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 11; PP. 1123-1126; BIBL. 22 REF.Article

THALLIUM AND INDIUM DOPED PB_1-XSN_XTE BY LIQUID PHASE EPITAXY.TOMASETTA LR; FONSTAD CG.1974; MATER. RES. BULL.; U.S.A.; DA. 1974; VOL. 9; NO 6; PP. 799-802; BIBL. 4 REF.Article

TRANSITION DE PHASE DANS LES COMPOSES DU GROUPE A₄B₆: SYMETRIE DES PHASES ET COMPORTEMENT CRITIQUEDUGAEV VK; LITVINOV VI.1983; FIZIKA TVERDOGO TELA; ISSN 0367-3294; SUN; DA. 1983; VOL. 25; NO 1; PP. 136-143; BIBL. 22 REF.Article

JUNCTION MIGRATION IN PBTE-PBSNTE HETEROSTRUCTURESEGER D; ZEMEL A; ROTTER S et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 1; PP. 490-495; BIBL. 16 REF.Article

INVESTIGATIONS FOR SN DIFFUSION IN PB_1-XSN_XTE AND PBTESICHE D; ERMISCH W.1980; KRIST. TECH.; ISSN 0023-4753; DDR; DA. 1980; VOL. 15; NO 9; PP. 1043-1049; BIBL. 9 REF.Article