Electronic structure of Si and Ge (111) surfaces and the Si-Ge (111) interfaceAGRAWAL, B. K.Physical review. B, Condensed matter. 1985, Vol 31, Num 4, pp 2517-2520, issn 0163-1829Article

Complex models of surface state admittanceNAKHAMANSON, R. S; SEVASTIANOV, S. B.International journal of electronics. 1984, Vol 56, Num 3, pp 287-297, issn 0020-7217Article

Oscillations électromagnétiques localisées à la surface de séparation rugueuse de deux milieuxMAL'SHUKOV, A. G; SHEKHMAMET'EV, SH. A.Fizika tverdogo tela. 1983, Vol 25, Num 9, pp 2623-2626, issn 0367-3294Article

Etude des propriétés électroniques et optiques de surfaces du silicium et d'interfaces argent/silicium par spectroscopie optique de réflectivité différentielle = Studies of the electronic and optical properties of silicon surfaces and silver/silicon interfaces by differential reflectivity optical spectroscopyAlameh, Rakia; Borensztein, Yves.1991, 167 p.Thesis

Observation of the effect of tip electronic states on tunnel spectra acquired with the scanning tunneling microscopeKLITSNER, T; BECKER, R. S; VICKERS, J. S et al.Physical review. B, Condensed matter. 1990, Vol 41, Num 6, pp 3837-3840, issn 0163-1829, 4 p.Article

Band crossing and surface states in solidsZAK, J.Physics letters. A. 1984, Vol 106, Num 8, pp 399-402, issn 0375-9601Article

Comment on the paper entitled «characterization of the interface states at Al-GaAs Schottky» barriers with a thin interface layerVAN MEIRHAEGHE, R. L; LAFLERE, W. H; MORANTE, J. R et al.Solid-state electronics. 1984, Vol 27, Num 12, issn 0038-1101, 1157Article

Chemically induced interface states in photoelectro-chemical cellsBUTLER, M. A; GINLEY, D. S.Applied physics letters. 1983, Vol 42, Num 7, pp 582-584, issn 0003-6951Article

On the ground state of commensurate overlayer lattices in a weak substrate potentialLYUKSYUTOV, I; BAUER, E.Surface science. 1989, Vol 220, Num 1, pp 29-42, issn 0039-6028, 14 p.Article

GaP-Si band-offset modifications due to alkali metal intralayer depositionPEREZ, R; ORTEGA, J; GARCIA-VIDAL, F. J et al.Applied surface science. 1992, Vol 56-58, pp 756-761, issn 0169-4332, bConference Paper

Comment on theory of incomplete crystals and crystalline interfaces by F. Garcia-Moliner and V. R. VelascoLAMBRECHT, W. R. L.Physica scripta (Print). 1987, Vol 35, Num 5, pp 724-725, issn 0031-8949Article

Bulk and surface electronic states in semiconductor superlatticesMASRI, P; DOBRZYNSKI, L; DJAFARI-ROUHANI, B et al.Surface science. 1986, Vol 166, Num 2-3, pp 301-326, issn 0039-6028Article

Green functions for surface problemsGARCIA-MOLINER, F.Progress in surface science. 1993, Vol 42, Num 1-4, issn 0079-6816, p. 33Conference Paper

Atomic intermixing and electronic interaction at the Pd-Si(111) interfaceBISI, O; TU, K. N.Physical review letters. 1984, Vol 52, Num 18, pp 1633-1636, issn 0031-9007Article

Jahn-Teller distortions of icosahedral complexesBREZA, M.Czechoslovak journal of physics. 1990, Vol 40, Num 11, pp 1177-1184, issn 0011-4626Article

Electronic states in superlattices: a new theoretical approach within the memory function formalismGRAFT, R. D; PARRAVICINI, G. P; RESCA, L et al.Solid state communications. 1985, Vol 54, Num 1, pp 115-117, issn 0038-1098Article

Radiation effects in nitrided oxidesTERRY, F. L. JR; AUCOIN, R. J; NAIMAN, M. L et al.IEEE electron device letters. 1983, Vol 4, Num 6, pp 191-193, issn 0741-3106Article

Electronic structure of thin Si layers in CaF₂ : hybridization versus confinementFASOLINO, A; OSSICINI, S; BERNARDINI, F et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1145-1147, issn 0038-1101Conference Paper

Traitements de surface d'InP et contribution à l'optimisation des interfaces de reprise d'épitaxie InP(p)/InP(p) réalisées par GSMBE = InP surface treatments and optimization of InP(p)/InP(p) regrown interfaces obtained using GSMBEGallet, Didier; Hollinger, Guy.1992, 215 p.Thesis

Surface wake potential (Comments to the paper by Kononets and Filippov)OHTSUKI, Y. H; KAWAI, R.Physica status solidi. B. Basic research. 1985, Vol 128, Num 2, pp K169-K170, issn 0370-1972Article

Critical analysis of the excitation map concept for studying threshold effects in VLEED. CommentLOPEZ, J; LE BOSSE, J. C; BAUDOING, R et al.Physica status solidi. B. Basic research. 1984, Vol 124, Num 1, issn 0370-1972, 12 p.Article

Simulations de défauts localisés dans les fluorures d'alcalino-terreuxAmara, Abdallah; Thuau, Michel.1989, 305 p.Thesis

Three-parameter wavefunction for the 2 ¹S state of heliumMU-SHIANG WU.Journal of physics. B. Atomic and molecular physics. 1985, Vol 18, Num 10, pp L271-L273, issn 0022-3700Article

Effect of surface states of WO₃ on the operating characteristics of thin film electrochromic devicesYOSHIMURA, T; WATANABE, M; KOIKE, Y et al.Thin solid films. 1983, Vol 101, Num 2, pp 141-151, issn 0040-6090Article

Photoconductor surface states and detective quantum efficiencyBURGE, G.Solid state communications. 1983, Vol 45, Num 12, pp 1021-1023, issn 0038-1098Article