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Comment on the paper entitled «characterization of the interface states at Al-GaAs Schottky» barriers with a thin interface layerVAN MEIRHAEGHE, R. L; LAFLERE, W. H; MORANTE, J. R et al.Solid-state electronics. 1984, Vol 27, Num 12, issn 0038-1101, 1157Article

Chemically induced interface states in photoelectro-chemical cellsBUTLER, M. A; GINLEY, D. S.Applied physics letters. 1983, Vol 42, Num 7, pp 582-584, issn 0003-6951Article

Traitements de surface d'InP et contribution à l'optimisation des interfaces de reprise d'épitaxie InP(p)/InP(p) réalisées par GSMBE = InP surface treatments and optimization of InP(p)/InP(p) regrown interfaces obtained using GSMBEGallet, Didier; Hollinger, Guy.1992, 215 p.Thesis

Electronic states in superlattices: a new theoretical approach within the memory function formalismGRAFT, R. D; PARRAVICINI, G. P; RESCA, L et al.Solid state communications. 1985, Vol 54, Num 1, pp 115-117, issn 0038-1098Article

Radiation effects in nitrided oxidesTERRY, F. L. JR; AUCOIN, R. J; NAIMAN, M. L et al.IEEE electron device letters. 1983, Vol 4, Num 6, pp 191-193, issn 0741-3106Article

Théorie des états de surface fluctuants dans les structures MDS: dynamique de variation de chargeGERGEL, V. A.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 4, pp 637-644, issn 0015-3222Article

Gate-width dependence of radiation-induced interface traps in metal/SiO2/Si devicesCHIN, M. R; MA, T. P.Applied physics letters. 1983, Vol 42, Num 10, pp 883-885, issn 0003-6951Article

Interface states and subbands in HgTe-CdTe heterostructuresLIN-LIU, Y. R; SHAM, L. J.Physical review. B, Condensed matter. 1985, Vol 32, Num 8, pp 5561-5563, issn 0163-1829Article

On the formation of semiconductor interfacesFLORES, F; TEJEDOR, C.Journal of physics. C. Solid state physics. 1987, Vol 20, Num 2, pp 145-175, issn 0022-3719Article

Self-consistent results for a GaAs/AlxGa1-xAs heterojunction. I: Subband structure and light-scattering spectraANDO, T.Journal of the Physical Society of Japan. 1982, Vol 51, Num 12, pp 3893-3899, issn 0031-9015Article

Heterojuntion band discontinuities and tunable band offsets : building blocks for bandgap engineeringCAPASSO, F.Applied surface science. 1992, Vol 56-58, pp 723-732, issn 0169-4332, bConference Paper

Current DLTS with a bipolar rectangular weighteing function for MOS structuresTOKUDA, Y; USAMI, A.Japanese journal of applied physics. 1983, Vol 22, Num 10, issn 0021-4922, 1629Article

Internally detected electron photoexcitation spectroscopy on heterostructuresCOLUZZA, C; NEGLIA, A; BENNOUNA, A et al.Applied surface science. 1992, Vol 56-58, pp 733-737, issn 0169-4332, bConference Paper

Understanding and controlling semiconductor interfaces : spectroscopy and spectromicroscopyMARGARITONDO, G; MCKINLEY, J. T; RIOUX, D et al.Applied surface science. 1992, Vol 56-58, pp 713-722, issn 0169-4332, bConference Paper

Electronic structure of Si and Ge (111) surfaces and the Si-Ge (111) interfaceAGRAWAL, B. K.Physical review. B, Condensed matter. 1985, Vol 31, Num 4, pp 2517-2520, issn 0163-1829Article

Evidence for interfacial defects in metal-insulator-InP structures induced by the insulator depositionSAUTREUIL, B; VIKTOROVITCH, P; BLANCHET, R et al.Journal of applied physics. 1985, Vol 57, Num 6, pp 2322-2324, issn 0021-8979Article

Surface states induced by metal atoms at the Si/electrolyte interfaceCHAZALVIEL, J.-N; STEFENEL, M; TRUONG, T. B et al.Surface science. 1983, Vol 134, Num 3, pp 865-885, issn 0039-6028Article

A new analytical expression for the interface index of metal-Schottky contacts on semiconductorsSZE, J. J; CHENG, H. C.Solid-state electronics. 1995, Vol 38, Num 5, pp 1059-1063, issn 0038-1101Article

Control of Ge homojunction band offsets via ultrathin Ga-As dipole layersMCKINLEY, J. T; KWU, Y; KOLTENBAH, B. E. C et al.Applied surface science. 1992, Vol 56-58, pp 762-765, issn 0169-4332, bConference Paper

Electronic states in semiconductor heterostructuresBASTARD, G; BRUM, J. A.IEEE journal of quantum electronics. 1986, Vol 22, Num 9, pp 1625-1644, issn 0018-9197Article

Passivation du semiconducteur InP à base de fluorures: Etudes électriques = Passivation of InP semiconductor with fluoride compounds: Electrical propertiesElfajri, Abdelkrim; Couturier, Gérard.1992, 102 p.Thesis

INTERFACE CHARGE CHARACTERISTICS OF MOS STRUCTURES WITH DIFFERENT METALS ON STEAM GROWN OXIDES.KAR S.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 9; PP. 723-732; BIBL. 24 REF.Article

PROPRIETES PHOTOELECTRIQUES D'HETEROJONCTIONS NON PARFAITESSHIK A YA; SHMARTSEV YU V.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 7; PP. 1385-1393; BIBL. 23 REF.Article

INTERFACIAL ELECTRICAL PROPERTIES OF ION-BEAM SPUTTER DEPOSITED AMORPHOUS CARBON ON SILICONAZIM KHAN; WOOLLAM JA; CHUNG Y et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 5; PP. 146-149; BIBL. 16 REF.Article

ON THE ELECTRICAL PROPERTIES OF COMPOUND SEMICONDUCTOR INTERFACES IN METAL/INSULATOR/SEMICONDUCTOR STRUCTURES AND THE POSSIBLE ORIGIN OF INTERFACE STATESHASEGAWA H; SAWADA T.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 103; NO 1-2; PP. 119-140; BIBL. 79 REF.Article

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