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SACPM 2011: Proceedings of the 4th South African Conference on Photonic Materials, held in Kariega Game Reserve, South Africa, 2-6 May 2011VENTER, Andrè; AURET, Danie; SWART, Hendrik C et al.Physica. B, Condensed matter. 2012, Vol 407, Num 10, issn 0921-4526, 234 p.Conference Proceedings

Proceedings of the 26th International Conference on Defects in Semiconductors 26th ICDSEVANS-FREEMAN, Jan; VERNON-PARRY, Karen; ALLEN, Martin et al.Physica. B, Condensed matter. 2012, Vol 407, Num 15, issn 0921-4526, 242 p.Conference Proceedings

Proceedings of the 21st international conference on defects in semiconductors, ICDS-21, Giessen, Germany, 16-20 July 2001HOFMANN, Detlev M.Physica. B, Condensed matter. 2001, Vol 308-10, issn 0921-4526, 1254 p.Conference Proceedings

Proceedings of the Third South African Conference on Photonic Materials: SACPM 2009: held in Mabula Game Lodge, South Africa 23-27 March 2009VENTER, André; BOTHA, Reinhardt; AURET, Danie et al.Physica. B, Condensed matter. 2009, Vol 404, Num 22, issn 0921-4526, 178 p.Conference Proceedings

On photocurrent (and EPR) study of defect levels in CVD diamondROSA, J; VANECEK, M; NESLADEK, M et al.Physica status solidi. A. Applied research. 1999, Vol 172, Num 1, pp 113-122, issn 0031-8965Article

Semiconductor surface studiesJOANNOPOULOS, J. D; CHO, K; VILLENEUVE, P. R et al.RLE Progress report. 1997, Num 139, pp 171-175, issn 0163-9218Article

Proceedings of the 25th International Conference on Defects in Semiconductors: ICDS-25BAGRAEV, Nikolay T; EMTSEV, Vadim V; ESTREICHER, Stefan K et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, issn 0921-4526, 777 p.Conference Proceedings

Analysis of the deep-level transient spectra by the method of mathematical modelingSHMATOV, A. A; TYBULEWICZ, A.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 8, pp 710-712, issn 1063-7826Article

Positron deep level transient spectroscopy : A new application of positron annihilation to semiconductor physicsBELING, C. D; FUNG, S; AU, H. L et al.Applied surface science. 1997, Vol 116, pp 121-128, issn 0169-4332Conference Paper

Conference on Photonic MaterialsLEITCH, Andrew; BOTHA, Reinhardt.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 1, pp 129-170, issn 1862-6300, 41 p.Conference Paper

Proceedings of the 22nd International Conference on Defects in Semiconductors, ICDS-22, Aarhus, Denmark, 28 July-1 August 2003BONDE NIELSEN, K; NYLANDSTED LARSEN, A; WEYER, G et al.Physica. B, Condensed matter. 2003, Vol 340-42, issn 0921-4526, 1206 p.Conference Proceedings

Dislocation-related luminescence properties of siliconSTEINMAN, E. A; GRIMMEISS, H. G.Semiconductor science and technology. 1998, Vol 13, Num 1, pp 124-129, issn 0268-1242Article

Proceedings of the 23rd international conference on defects in semiconductors, ICDS-23, Awaji Island, Japan, 27-29 July 2005OSHIYAMA, A; MAEDA, K; ITOH, K. M et al.Physica. B, Condensed matter. 2006, Vol 376-77, issn 0921-4526, 1010 p.Conference Proceedings

Electronic localization for point defect computationsVAIL, John M.Radiation effects and defects in solids. 2001, Vol 154, Num 3-4, pp 211-215, issn 1042-0150Conference Paper

Distortion of a complex defect with a weak bindingGAVRICHKOV, V. A; TYBULEWICZ, A.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 10, pp 921-924, issn 1063-7826Article

Trap State Spectroscopy of LiMyMn2-yO4 (M = Mn, Ni, Co): Guiding Principles for Electrochemical PerformanceKRISHNA RAO RAGAVENDRAN; LI LU; BING JOE HWANG et al.Journal of physical chemistry. C. 2013, Vol 117, Num 8, pp 3812-3817, issn 1932-7447, 6 p.Article

Recombination processes with and without momentum conservation in degenerate InNVALCHEVA, E; ALEXANDROVA, S; DIMITROV, S et al.Physica status solidi. A. Applied research. 2006, Vol 203, Num 1, pp 75-79, issn 0031-8965, 5 p.Conference Paper

Special issue on μSR: muon spin rotation, relaxation or resonanceHEFFNER, Robert H; NAGAMINE, Kanetada.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 40, issn 0953-8984, 407 p.Serial Issue

Conference on Doping Issues in Wide Band-Gap SemiconductorsFALL, C. J; JONES, R.Journal of physics. Condensed matter (Print). 2001, Vol 13, Num 40, issn 0953-8984, 164 p.Conference Proceedings

Transparent probe test structure for electrical and physical characterization of defects in thin filmsTRINGE, Joseph W; DEAL, Michael D; PLUMMER, James D et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 12, pp 4633-4638, issn 0013-4651Article

Quantitative optical variants of deep level transient spectroscopy : application to high purity germaniumBLONDEEL, A; CLAUWS, P.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 71, Num 1-3, pp 233-237, issn 0921-5107Conference Paper

Resonant tunneling between two monomode electronic waveguidesVASSEUR, J. O; AKJOUJ, A; DJAFARI-ROUHANI, B et al.Surface science. 2000, Vol 454-56, pp 428-432, issn 0039-6028Conference Paper

Defect physics of ternary chalcopyrite semiconductorsMARQUEZ, R; RINCON, C.Materials letters (General ed.). 1999, Vol 40, Num 2, pp 66-70, issn 0167-577XArticle

The residual electrically active damage in low energy boron implanted silicon : rapid thermal annealing and implant mass effectsKAABI, L; BEN BRAHIM, J; REMAKI, B et al.EPJ. Applied physics (Print). 1998, Vol 3, Num 1, pp 49-52, issn 1286-0042Conference Paper

New oxygen-related EPR spectra in proton-irradiated siliconABDULLIN, KH. A; MUKASHEV, B. N; MAKHOV, A. M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 77-80, issn 0921-5107Conference Paper

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