Mise au point d'un dispositif expérimental pour l'étude des structures MOS: Application à l'étude du vieillissement des TMOS microniques par la technique de pompage de charge = Development of an experimental apparatus for MOS structure study: application to the study of micronic TMOS aging by the charge pumping techniqueDjahli, Farid; Balland, Bernard.1992, 144 p.Thesis

The interface polaron in polar-polar crystalsLIANG, X. X.Solid state communications. 1985, Vol 55, Num 3, pp 215-218, issn 0038-1098Article

Identification of Xe interface states in the Xe(111)/Pt(111) system by spin-resolved photoelectron spectroscopyKESSLER, B; MÜLLER, N; SCHMIEDESKAMP, B et al.Solid state communications. 1994, Vol 90, Num 8, pp 523-526, issn 0038-1098Article

ON THE AERTS MODEL IN THE THEORY OF INTERFACE STATESKANDILAROV BD; TASHKOVA MG; PETROVA PC et al.1973; C.R. ACAD. BULG. SCI.; BULG.; DA. 1973; VOL. 26; NO 2; PP. 159-162; BIBL. 7 REF.Serial Issue

THE QUANTITATIVE EFFECTS OF INTERFACE STATES ON THE PERFORMANCE OF CHARGE-COUPLED DEVICESTOMPSETT MF.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 1; PP. 45-55; BIBL. 20 REF.Serial Issue

Contribution à l'étude du vieillissement des structures MOS = Contribution to the study of electrical instabilities in MOS structuresNabha, Hussein; Hellouin, Y; Krawczyk, S et al.1990, 103 p.Thesis

Electronic properties of (100)Ge/Ge(Hf)O₂ interfaces : A first-principles studyHOUSSA, M; POURTOIS, G; CAYMAX, M et al.Surface science. 2008, Vol 602, Num 4, issn 0039-6028, L25-L28Article

Electron states of a stacking fault ribbon in siliconLEHTO, N; MARKLUND, S; YONG-LIANG, W et al.Solid state communications. 1994, Vol 92, Num 12, pp 987-989, issn 0038-1098Article

Contribution of the interface state continuum to the non-linearities of Schottky (I-V) characteristicsSAHAY, P. P.SPIE proceedings series. 1998, pp 1247-1250, isbn 0-8194-2756-X, 2VolConference Paper

Effect of interface states on the dc characteristics of short channel metal-semiconductor field effect transistorMAJUMDAR, L; CHATTOPADHYAY, P.Applied surface science. 1997, Vol 119, Num 3-4, pp 369-373, issn 0169-4332Article

Interfaces in organic light emitting devices : Quenching of luminescenceCHOONG, V.-E; PARK, Y; HSIEH, B. R et al.SPIE proceedings series. 1997, pp 274-284, isbn 0-8194-2570-2Conference Paper

Hydrogenic impurity state at an interfaceNAKAYAMA, H; KAYANUMA, Y.Solid state communications. 1995, Vol 95, Num 8, pp 573-576, issn 0038-1098Article

Interface trapping states in MISIM structures, with ZnS:MnPETRE, D; PINTILIE, I; CIUREA, M. L et al.Thin solid films. 1995, Vol 260, Num 1, pp 54-57, issn 0040-6090Article

Effective interface density of electron states in semiconductor mixture filmsSHAMIRZAEV, S. K; KHAMRAKULOV, I. V; SVIRIDOV, V. M et al.International journal of electronics. 1995, Vol 78, Num 4, pp 629-639, issn 0020-7217Conference Paper

Role and mechanism of the formation of hydrogen-induced interface states for platinum/silicon oxide/silicon MOS tunnelling diodesKOBAYASHI, H; IWADATE, H; NAKATO, Y et al.Sensors and actuators. B, Chemical. 1995, Vol 25, Num 1-3, pp 815-818, issn 0925-4005Conference Paper

Effects of thermal annealing on interface states density and ideality factor in Ni/Si(111) Schottky diodesSAHAY, P. P; SRIVASTAVA, R. S.Indian journal of pure & applied physics. 1991, Vol 29, Num 5, pp 357-361, issn 0019-5596Article

Hydrogen/deuterium implantation for SI-dielectric interface in nanoscale devicesKUNDU, T; MISRA, D.Proceedings - Electrochemical Society. 2004, pp 346-355, issn 0161-6374, isbn 1-56677-417-9, 10 p.Conference Paper

Brain-computer interface : State of the art and future prospectsPFURTSCHELLER, Gert.EUSIPCO. Conference. 2004, isbn 3-200-00148-8, 3Vol, volI, 509-510Conference Paper

A review of defect generation in the SiO₂ and at its interface with SIZHANG, J. F.Proceedings - Electrochemical Society. 2003, pp 262-290, issn 0161-6374, isbn 1-56677-347-4, 29 p.Conference Paper

An improved time domain analysis of the charge pumping currentMASSON, P; AUTRAN, J.-L; GHIBAUDO, G et al.Journal of non-crystalline solids. 2001, Vol 280, Num 1-3, pp 255-260, issn 0022-3093Conference Paper

Improvement on properties and reliability of ultra-thin silicon oxide (3-5 nm) grown by microwave plasma afterglow at the low temperatures using mixtures of N₂O and O₂LEU, C. W; HU, S. F; CHEN, P. C et al.Applied surface science. 1999, Vol 142, Num 1-4, pp 322-326, issn 0169-4332Conference Paper

Cyclotron resonance of interface magnetopolarons at finite temperaturesWEI, B.-H; CHANG SUB KIM.Journal of physics. Condensed matter (Print). 1998, Vol 10, Num 22, pp 4857-4866, issn 0953-8984Article

Electronic properties of n-Si(111) during electrochemical surface transformation toward H-terminationDITTRICH, T; RAUSCHER, S; BITZER, T et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 7, pp 2411-2413, issn 0013-4651Article

Temperature dependence of the capture cross section determined by DLTS on an MOS structureÖZDER, S; ATILGAN, I; KATIRCIOGLU, B et al.Semiconductor science and technology. 1995, Vol 10, Num 11, pp 1510-1519, issn 0268-1242Article

Differences in the Cs 4d and 5p surface and interface core-level shiftsANDERSEN, J. N; LUNDGREN, E; NYHOLM, R et al.Chemical physics letters. 1994, Vol 226, Num 1-2, pp 106-110, issn 0009-2614Article