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Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet etchingDECHAO YANG; HONGWEI LIANG; GUOTONG DU et al.Applied surface science. 2014, Vol 295, pp 26-30, issn 0169-4332, 5 p.Article

Analysis of the etching mechanisms of tungsten in fluorine containing plasmasVERDONCK, P; SWART, J; BRASSEUR, G et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 6, pp 1971-1976, issn 0013-4651Article

Gamma effect on track properties of PADC detectorSINHA, D; SWU, T; TRIPATHY, S. P et al.Radiation measurements. 2003, Vol 36, Num 1-6, pp 229-231, issn 1350-4487, 3 p.Conference Paper

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SiO₂ etch rate modification by ion implantationBELLANDI, E; SONCINI, V.Thin solid films. 2012, Vol 524, pp 75-85, issn 0040-6090, 11 p.Article

Modification of surface properties of polyamide 6 films with atmospheric pressure plasmaZHIQIANG GAO.Applied surface science. 2011, Vol 257, Num 14, pp 6068-6072, issn 0169-4332, 5 p.Article

Wet chemical etching of Al_0.5In_0.5PLEE, J. W; PEARTON, S. J; ABERNATHY, C. R et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 6, pp L100-L102, issn 0013-4651Article

Etching of photoresist using oxygen plasma generated by a multipolar electron cyclotron resonance sourcePANG, S. W; SUNG, K. T; KO, K. K et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 3, pp 1118-1123, issn 0734-211XArticle

Magnetron reactive ion etching of GaAs in a BCl₃ dischargeMCLANE, G. F; MEYYAPPAN, M; LEE, H. S et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 2, pp 333-336, issn 1071-1023Conference Paper

Deep trench plasma etching of single crystal silicon using SF₆/O₂ gas mixturesD'EMIC, C. P; CHAN, K. K; BLUM, J et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 3, pp 1105-1110, issn 0734-211XArticle

Bulk etch rate estimation of LR-115 SSNTD using PHOENIX interfaceVARSHNEY, Rati; SONLCAWADE, R. G; GUPTA, Monika et al.Radiation measurements. 2011, Vol 46, Num 4, pp 461-463, issn 1350-4487, 3 p.Article

Hf02 etching mechanism in inductively-coupled Cl2/Ar plasmaKIM, Moonkeun; EFREMOV, Alexander; HYUN WOO LEE et al.Thin solid films. 2011, Vol 519, Num 20, pp 6708-6711, issn 0040-6090, 4 p.Conference Paper

The influence of the laser spot size and the pulse number on laser-induced backside wet etchingBÖHME, R; ZIMMER, K.Applied surface science. 2005, Vol 247, Num 1-4, pp 256-261, issn 0169-4332, 6 p.Conference Paper

Study of the chemical behavior of hydrofluoric, nitric and sulfuric acids mixtures applied to niobium polishingASPART, A; ANTOINE, C. Z.Applied surface science. 2004, Vol 227, Num 1-4, pp 17-29, issn 0169-4332, 13 p.Article

Applicability of the multi-hit model to calculate the track etch rate in μm-scale in CR-39 detectorsAWAD, E. M.Radiation effects and defects in solids. 2003, Vol 158, Num 7, pp 539-550, issn 1042-0150, 12 p.Article

Reconstructing the 3D etch rate distribution of silicon in anisotropic etchants using data from vicinal {100}, {110} and {111} surfacesGOSALVEZ, M. A; PAL, Prem; SATO, K et al.Journal of micromechanics and microengineering (Print). 2011, Vol 21, Num 10, issn 0960-1317, 105018.1-105018.17Article

Effects of the initial stencil width on stainless steel wet chemical etching: combined model and experimental investigationsLINGJUN SUN; JUNSHENG LIANG; CHONG LIU et al.Journal of micromechanics and microengineering (Print). 2009, Vol 19, Num 8, issn 0960-1317, 085023.1-085023.8Article

Investigation of dissolution process of implanted silicon dioxideNURGAZIZOV, Niaz I; BUKHARAEV, Anastas A; AMINOVA, Roza M et al.SPIE proceedings series. 2004, pp 147-154, isbn 0-8194-5324-2, 8 p.Conference Paper

Study of wet etching thin films of indium tin oxide in oxalic acid by monitoring the resistanceMAMMANA, Suelene S; GREATTI, Alessandra; LUIZ, Francis H et al.Thin solid films. 2014, Vol 567, pp 20-31, issn 0040-6090, 12 p.Article

On the etching mechanism of ZrO2 thin films in inductively coupled BCl3/Ar plasmaKIM, Mansu; MIN, Nam-Ki; SUN JIN YUN et al.Microelectronic engineering. 2008, Vol 85, Num 2, pp 348-354, issn 0167-9317, 7 p.Article

Etching control of benzocyclobutene in CF₄/O₂ and SF₆/O₂ plasmas with thick photoresist and titanium masksLIAO, E. B; TEH, W. H; TEOH, K. W et al.Thin solid films. 2006, Vol 504, Num 1-2, pp 252-256, issn 0040-6090, 5 p.Conference Paper

Etching SiO₂ films in aqueous 0.48% HFSOMASHEKHAR, A; O'BRIEN, S.Journal of the Electrochemical Society. 1996, Vol 143, Num 9, pp 2885-2891, issn 0013-4651Article

Analysis of fluorocarbon deposition during SiO₂ etchingMARUYAMA, T; FUJIWARA, N; SIOZAWA, K.-I et al.Japanese journal of applied physics. 1996, Vol 35, Num 4B, pp 2463-2467, issn 0021-4922, 1Conference Paper

Wet Etching Study of La_0.67(Sr_0.5Ca_0.5)_0.33MnO₃ Films on Silicon SubstratesKIM, Joo-Hyung; GRISHIN, Alexander M; IGNATOVA, Velislava Angelova et al.Journal of electronic materials. 2008, Vol 37, Num 3, pp 361-367, issn 0361-5235, 7 p.Article