Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet etchingDECHAO YANG; HONGWEI LIANG; GUOTONG DU et al.Applied surface science. 2014, Vol 295, pp 26-30, issn 0169-4332, 5 p.Article

Differentiating etch, epigene, and subaerial landformsTWIDALE, C.R.Zeitschrift für Geomorphologie. 2009, Vol 53, Num 1, pp 1-21, issn 0372-8854, 21 p.Article

Dry etching of CuCrO₂ thin filmsLIM, W. T; SADIK, P. W; NORTON, D. P et al.Applied surface science. 2008, Vol 254, Num 8, pp 2359-2363, issn 0169-4332, 5 p.Article

Effect of post-etch cleaning on Ru-capped extreme ultraviolet lithography photomaskOH, Jisook; PARK, Chanhyoung; SEO, Dongwan et al.Applied surface science. 2012, Vol 258, Num 10, pp 4702-4706, issn 0169-4332, 5 p.Article

A new texturing technique of monocrystalline silicon surface with sodium hypochloriteLINFENG SUN; JIUYAO TANG.Applied surface science. 2009, Vol 255, Num 22, pp 9301-9304, issn 0169-4332, 4 p.Article

CF₃ interaction with Si(100)-(2× 1) : Molecular dynamics simulationGOU, F; GLEESON, M. A; KLEYN, A. W et al.Surface science. 2007, Vol 601, Num 18, pp 4250-4255, issn 0039-6028, 6 p.Conference Paper

Quantitative analysis of thermally induced desorption during halogen-etching of a silicon (111) surfaceSHUDO, K; KIRIMURA, T; TANAKA, Y et al.Surface science. 2006, Vol 600, Num 16, pp 3147-3153, issn 0039-6028, 7 p.Article

Laser etching of Thoria pellets for microstructural investigationsSINHA, Sucharita; RAMADASAN, E; JATHAR, V. P et al.Applied surface science. 2007, Vol 253, Num 9, pp 4404-4408, issn 0169-4332, 5 p.Article

Facile and fast fabrication of superhydrophobic surface on magnesium alloyZHONGWEI WANG; QING LI; ZUXIN SHE et al.Applied surface science. 2013, Vol 271, pp 182-192, issn 0169-4332, 11 p.Article

Molecular arrangement and photopatterning of copolymer containing ketal-protected group in ultrathin nanosheetsWENJIAN XU; TIESHENG LI; GOULIANG ZENG et al.Surface science. 2008, Vol 602, Num 6, pp 1141-1148, issn 0039-6028, 8 p.Article

Nanoscale Etching and Flattening of Metals with Ozone WaterHATSUKI, Ryuji; YAMAMOTO, Takatoki.Nano letters (Print). 2012, Vol 12, Num 6, pp 3158-3161, issn 1530-6984, 4 p.Article

First principles study of Si etching by CHF₃ plasma sourceWANG, Weichao; CHA, Pil-Ryung; SANG HO LEE et al.Applied surface science. 2011, Vol 257, Num 21, pp 8767-8771, issn 0169-4332, 5 p.Article

Physical Chemistry of Wet Etching of Silicon (2)SATO, Kazuo.Sensors and materials. 2003, Vol 15, Num 2, issn 0914-4935, 61 p.Serial Issue

Preferential {100} etching of boron-doped diamond electrodes and diamond particles by CO₂ activationJUNFENG ZHANG; NAKAI, Takaaki; UNO, Masaharu et al.Carbon (New York, NY). 2014, Vol 70, pp 207-214, issn 0008-6223, 8 p.Article

Non-monotonic roughening at early stages of isotropic silicon etchingPRABHJEET KAUR DHILLON; SARKAR, Subhendu.Applied surface science. 2013, Vol 284, pp 569-574, issn 0169-4332, 6 p.Article

Catalytic etching of synthetic diamond crystallites by ironOHASHI, Tatsuya; SUGIMOTO, Wataru; TAKASU, Yoshio et al.Applied surface science. 2012, Vol 258, Num 20, pp 8128-8133, issn 0169-4332, 6 p.Article

Fabrication and reflection properties of silicon nanopillars by cesium chloride self-assembly and dry etchingJING LIU; ASHMKHAN, Marina; BO WANG et al.Applied surface science. 2012, Vol 258, Num 22, pp 8825-8830, issn 0169-4332, 6 p.Article

Laser induced simultaneous etching of silicon and deposition of carbon materialsRASHID, A; PIGLMAYER, K.Applied surface science. 2012, Vol 258, Num 23, pp 9167-9170, issn 0169-4332, 4 p.Conference Paper

The research on mechanical effect etching Si in pulsed laser micromaching under waterLONG YUHONG; XIONG LIANGCAI; SHI TIELIN et al.Applied surface science. 2011, Vol 257, Num 8, pp 3677-3681, issn 0169-4332, 5 p.Article

Etching of CVD diamond films using oxygen ions in ECR plasmaZHIBIN MA; JUN WU; WULIN SHEN et al.Applied surface science. 2014, Vol 289, pp 533-537, issn 0169-4332, 5 p.Article

Mixed matrix membranes with HF acid etched ZSM-5 for ethanol/water separation: Preparation and pervaporation performanceXIA ZHAN; JUAN LU; TINGTING TAN et al.Applied surface science. 2012, Vol 259, pp 547-556, issn 0169-4332, 10 p.Article

AFM measurement of atomic-scale Si surface etching by active oxidationMORITA, Y; MIGITA, S; MIZUBAYASHI, W et al.Surface science. 2010, Vol 604, Num 17-18, pp 1432-1437, issn 0039-6028, 6 p.Article

Temperature programmed desorption studies of deuterium passivated silicon nanocrystalsSALIVATI, Navneethakrishnan; EKERDT, John G.Surface science. 2009, Vol 603, Num 8, pp 1121-1125, issn 0039-6028, 5 p.Article

A fast method to fabricate superhydrophobic surfaces on zinc substrate with ion assisted chemical etchingYI QI; ZHE CUI; BIN LIANG et al.Applied surface science. 2014, Vol 305, pp 716-724, issn 0169-4332, 9 p.Article

Etching of new phase change material Ti_0.5Sb₂Te₃ by Cl₂/Ar and CF₄/Ar inductively coupled plasmasZHONGHUA ZHANG; SANNIAN SONG; BO LIU et al.Applied surface science. 2014, Vol 311, pp 68-73, issn 0169-4332, 6 p.Article