Epitaxy of carbon-rich silicon with MBELAVEANT, P; GERTH, G; WERNER, P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 241-245, issn 0921-5107Conference Paper

SiGe technology bears fruitsBERNTGEN, J; SCHUEPPEN, A; MAIER, P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 13-20, issn 0921-5107Conference Paper

European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium D: Second International Conference on Silicon Epitaxy and Heterostructures, Strasbourg, France, June 4-8th 2001KASPER, E; EISELE, I; PARKER, E. H. C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, issn 0921-5107, 465 p.Conference Proceedings

The vertical concept of power MOSFETsTOLKSDORF, C; FINK, C; SCHULZE, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 439-443, issn 0921-5107Conference Paper

Aspects of Ge/Si self-assembled quantum dotsBOUCAUD, P; LE THANH, V; YAM, V et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 36-44, issn 0921-5107Conference Paper

Nucleationless island formation in SiGe/Si(100) heteroepitaxySUTTER, P; LAGALLY, M. G.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 45-48, issn 0921-5107Conference Paper

Bandgap narrowing in strained SiGe on the basis of electrical measurements on Si/SiGe/Si hetero bipolar transistorsEBERHARDT, J; KASPER, E.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 93-96, issn 0921-5107Conference Paper

Fourier-transform infrared investigations of Si_1-yC_y structures for hetero bipolar transistor applicationsGRUBER, D; MÜHLBERGER, M; FROMHERZ, T et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 97-100, issn 0921-5107Conference Paper

Low temperature epitaxial growth of germanium islands in active regions of silicon interband tunneling diodesDASHIELL, M. W; MÜLLER, C; JIN-PHILLIPP, N. Y et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 106-110, issn 0921-5107Conference Paper

Low-dimensional inverted Si/SiGe modulation-doped electron gases using selective ex-situ ion implantationPAUL, D. J; AHMED, A; CHURCHILL, A. C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 111-115, issn 0921-5107Conference Paper

Photoluminescence of boron-doped Si_1-xGe_x epilayers grown by UHV-CVDROWELL, N. L; LAFONTAINE, H; DION, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 141-145, issn 0921-5107Conference Paper

2D versus 3D competition at the early stages of growth for Ge on Si(001) by molecular dynamicsRAITERI, P; CELINO, M; VALENTINOTTI, F et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 157-159, issn 0921-5107Conference Paper

Oscillation of in-plane lattices constant of Ge islands during molecular beam epitaxy growth on SiNIKIFOROV, A. I; CHEREPANOV, V. A; PCHELYAKOV, O. P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 180-183, issn 0921-5107Conference Paper

Formation of Ge quantum dots on boron-reconstructed surface/Si(111)MORI, H; NAGAI, H; YANAGAWA, T et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 188-190, issn 0921-5107Conference Paper

Critical island size of the SiC formation on Si(1 0 0) and Si(1 1 1)SCHARMANN, F; ATTENBERGER, W; LINDNER, J. K. N et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 201-204, issn 0921-5107Conference Paper

MBE grown short-period (Si_m/Ge_n)_N superlattices (SSLs) and its effect on the growth of uniform Si_0.75Ge_0.25/(SSLs)/Si(001) systemsRAHMAN, M. M; KURUMATANI, K; MATADA, H et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 252-256, issn 0921-5107Conference Paper

Growth and characterization of phosphorus doped Si_1-yC_y alloy grown by photo- and plasma-CVD at very low temperatureABE, Katsuya; YAGI, Shuhei; OKABAYASHI, Takashi et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 303-305, issn 0921-5107Conference Paper

Low-pressure chemical vapour deposition growth of epitaxial silicon selective to silicon nitrideLLOYD, N. S; BONAR, J. M.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 310-313, issn 0921-5107Conference Paper

Low-temperature solid-phase crystallization of a-Si_1-xGe_x on SiO₂ by ion-beam stimulationTSUNODA, Isao; NAGATA, Tomohiro; KENJO, Atsushi et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 336-340, issn 0921-5107Conference Paper

Growth of relaxed Si_1-xGe_x layers using an oxygen doped Si(O) compliant layerHAQ, E; NI, W.-X; HANSSON, G. V et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 355-359, issn 0921-5107Conference Paper

Properties of SBT films crystallized by pulsed excimer (KrF) laser annealingZHU, T; WANG, Y. P; ZHOU, L et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 390-393, issn 0921-5107Conference Paper

Sb-surfactant mediated growth of Ge nanostructuresPORTAVOCE, A; RONDA, A; BERBEZIER, I et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 205-210, issn 0921-5107Conference Paper

Si/SiGe quantum cascade structures emitting in the 10 μm rangeDEHLINGER, G; DIEHL, L; GRÜTZMACHER, D et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 30-35, issn 0921-5107Conference Paper

A 70-GHz-f_T double-polysilicon SiGe HBT using a non selective epitaxial growthBAUDRY, H; FELLOUS, C; CHANTRE, A et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 21-25, issn 0921-5107Conference Paper

Phonon assisted tunneling in gated p-i-n diodesSEDLMAIER, S; SCHULZE, J; SULIMA, T et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 116-119, issn 0921-5107Conference Paper