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COMPUTING AS A LANGUAGE OF PHYSICS. INTERNATIONAL SEMINAR COURSE. TRIESTE, 2-20 AUGUST 19711972; VIENNA; I.A.E.A.; DA. 1972; PP. 1-616; BIBL. DISSEM.Conference Proceedings

COLLOQUES DE LA SOCIETE FRANCAISE DE PHYSIQUE. EVIAN, 25-29 MAI 19711971; J. PHYS., COLLOQ.; FR.; DA. 1971; VOL. 32; NO 10; PP. 1-313; ABS. ANGL. FR.; BIBL. DISSEM.Conference Paper

Conventional n-type doping in diamond: state of the art and recent progressNESLADEK, Milos.Semiconductor science and technology. 2005, Vol 20, Num 2, pp R19-R27, issn 0268-1242Article

Lateral n-i-p junctions formed in an InSb quantum well by bevel etchingNASH, G. R; NASH, K. J; SMITH, S. J et al.Semiconductor science and technology. 2005, Vol 20, Num 2, pp 144-148, issn 0268-1242, 5 p.Article

Monte Carlo simulations of asymmetry multiple transit region Gunn diodesTEOH, Y. P; DUNN, G. M; PRIESTLEY, N et al.Semiconductor science and technology. 2005, Vol 20, Num 5, pp 418-422, issn 0268-1242, 5 p.Article

Optimized dual temperature pulsed laser deposition of TiO2 to realize MTOS (metal-TiO2-SiO2-Si) capacitors with ultrathin gate dielectricSINGH, Ravneet; PAILY, Roy; DASGUPTA, Amitava et al.Semiconductor science and technology. 2005, Vol 20, Num 1, pp 38-43, issn 0268-1242, 6 p.Article

Porous GaN/SiC templates for homoepitaxial growth: effect of the built-in stress on the formation of porous structuresMYNBAEVA, M. G; MYNBAEV, K. D; SARUA, A et al.Semiconductor science and technology. 2005, Vol 20, Num 1, pp 50-55, issn 0268-1242, 6 p.Article

Semiconducting AgSbSe2 thin film and its application in a photovoltaic structureBINDU, K; CAMPOS, José; NAIR, M. T. S et al.Semiconductor science and technology. 2005, Vol 20, Num 6, pp 496-504, issn 0268-1242, 9 p.Article

Temperature effect on dark electrical conductivity, Hall coefficient, space charge limited current and photoconductivity of TIGaS2 single crystalsQASRAWI, A. F; GASANLY, N. M.Semiconductor science and technology. 2005, Vol 20, Num 5, pp 446-452, issn 0268-1242, 7 p.Article

Thermoelectric conversion in p-n structures based on separation of charge carriers by energy in space owing to electron-phonon dragGUREVICH, Yu G; LOGVINOV, G. N; TITOV, O. Yu et al.Semiconductor science and technology. 2005, Vol 20, Num 6, pp 632-637, issn 0268-1242, 6 p.Article

Analytical models for polarization-induced carriersRIDLEY, B. K.Semiconductor science and technology. 2004, Vol 19, Num 3, pp 446-450, issn 0268-1242, 5 p.Article

Experimental investigation on the Coulomb screening length in siliconRUDAN, M; PERRONI, G.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S82-S83, issn 0268-1242Conference Paper

Infrared light emission from GaAs mesfets operating at avalanche breakdown conditionsZHURAVLEV, K. S; KOLOSANPV, V. A; MILEKHIN, A. G et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S94-S95, issn 0268-1242Conference Paper

Non-Gaussianity of resistance fluctuations near electrical breakdownPENNETTA, C; ALFINITO, E; REGGIANI, L et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S164-S166, issn 0268-1242Conference Paper

Gunn oscillations in GaN channelsSEVIK, C; BULUTAY, C.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S188-S190, issn 0268-1242Conference Paper

A quasi-particle model of the electron-Wigner potential interactionNEDJALKOV, M; KOSINA, H; UNGERSBOECK, E et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S226-S228, issn 0268-1242Conference Paper

Polarization state dynamics induced by the virtual excitation of spin-polarized carriers in semiconductor quantum wellsGANSEN, Eric J; SMIRL, Arthur L.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S372-S374, issn 0268-1242Conference Paper

Coupled quantum wires as a detector of many-body states below the last conductance plateauSHAILOS, A; OCHIAI, Y; MORIMOTO, T et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S405-S408, issn 0268-1242Conference Paper

Green's function simulation of terahertz photoconductivity in double quantum well field effect transistorsGUAN, D; RAVAIOLI, U; PERALTA, X. G et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S446-S448, issn 0268-1242Conference Paper

Gate-tunable THz detector based on a quantum Hall deviceSTELLMACH, C; HIRSCH, A; KALUGIN, N. G et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S454-S456, issn 0268-1242Conference Paper

Femtosecond intersubband dynamics of electrons in AlGaN/GaN-based high-electron-mobility transistorsWANG, Z; REIMANN, K; WOERNER, M et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S463-S464, issn 0268-1242Conference Paper

Effects of surface treatment on the velocity-field characteristics of AlGaN/GaN heterostructuresBARKER, J. M; FERRY, D. K; GOODNICK, S. M et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S478-S480, issn 0268-1242Conference Paper

Quantum theory of shuttling instability in a movable quantum dot arrayDONARINI, Andrea; NOVOTNY, Tomes; JAUHO, Antti-Pekka et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S430-S432, issn 0268-1242Conference Paper

Strained-Si single-gate versus unstrained-si double-gate MOSFETsBUFLER, F. M; SCHENK, A; FICHTNER, W et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S122-S124, issn 0268-1242Conference Paper

Transport and scattering of a wavepacket in a GaAs stadium discSAWAKI, N; SUZUMURA, N; TAKAGI, H et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S64-S66, issn 0268-1242Conference Paper

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