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NEW PRINTED CIRCUIT RESOLUTION PATTERNGREENE KF.1972; PLATING; U.S.A.; DA. 1972; VOL. 59; NO 8; PP. 756-758Serial Issue

STAGGERED MOVING AVERAGE TECHNIQUE (SMAT): A TOOL TO OPTIMIZE COMPONENT MANUFACTUREBAKER GO; HOCHHEISER CM.1972; I.E.E.E. TRANS. MANUFG TECHNOL.; U.S.A.; DA. 1972; VOL. 1; NO 2; PP. 15-18Serial Issue

EXPLANATION OF ANOMALOUS BASE REGIONS IN TRANSISTORSFAIR RB.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 4; PP. 186-187; BIBL. 3 REF.Serial Issue

LASER BEAM TECHNOLOGY FOR THE MICROELECTRONICS INDUSTRYWHITEHOUSE DR; ILGENFRITZ RW.1972; SOLID STATE TECHNOL.; U.S.A.; DA. 1972; VOL. 15; NO 7; PP. 32-35; BIBL. 2 REF.Serial Issue

PRODUCIBILITY: THE CRITICAL ENGINEERING MANUFACTURING INTERFACE1972; WESCON TECH. PAPERS; U.S.A.; DA. 1972; VOL. 16; PP. (24 P.); BIBL. DISSEM.Serial Issue

SMALL QUANTITY, FAST PRODUCTION PLATED-THRU-HOLE PRINTED CIRCUIT BOARDSHAMM R.1972; INSULAT./CIRCUITS; U.S.A.; DA. 1972; VOL. 18; NO 11; PP. 30-32; BIBL. 22 REF.Serial Issue

AUTOMATED STAKING MACHINE CUTS COSTS, LABOR IN ASSEMBLING PRINTED CIRCUIT BOARDS1972; INSULAT./CIRCUITS; U.S.A.; DA. 1972; VOL. 18; NO 11; PP. 52-53Serial Issue

MISE EN EVIDENCE DES JONCTIONS N-N+ DE GERMANIUM PAR GRAVURE CHIMIQUENIKOL'SKAYA NP; PITANOV VS.1973; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1973; NO 2; PP. 238-239; BIBL. 2 REF.Serial Issue

AN UPSIDE-DOWN MESA TECHNIQUE FOR FABRICATION OF X-BAND GUNN DEVICESATAMAN A.1972; ARCH. ELEKTRON. UBERTRAG. TECH.; DTSCH.; DA. 1972; VOL. 26; NO 12; PP. 558-559; ABS. ALLEM.; BIBL. 9 REF.Serial Issue

NOUVELLE TECHNOLOGIE EN CIRCUITS IMPRIMES1972; TOUTE ELECTRON.; FR.; DA. 1972; NO 371; PP. 38-40Serial Issue

A SYSTEMS APPROACH TO SEMICONDUCTOR SLICING TO IMPROVE WAFER QUALITY AND PRODUCTIVITYKACHAJIAN GS.1972; SOLID STATE TECHNOL.; U.S.A.; DA. 1972; VOL. 15; NO 9; PP. 59-64Serial Issue

WHITHER PCSMARKSTEIN HW.1972; ELECTRON. PACKAG. PRODUCT.; U.S.A.; DA. 1972; VOL. 12; NO 12; PP. 24-30 (3 P.); BIBL. 2 REF.Serial Issue

INFRARED DETECTOR ARRAYS BY R.F. SPUTTERINGCORSI C; ALFIERI I; PETROCCO G et al.1972; INFRARED PHYS.; G.B.; DA. 1972; VOL. 12; NO 4; PP. 271-275; H.T. 1; BIBL. 8 REF.Serial Issue

HIGH SENSITIVE P-DIFFUSION SILICON HALLTRONKASSABOV JD; VELCHEV NB.1973; C.R. ACAD. BULG. SCI.; BULG.; DA. 1973; VOL. 26; NO 2; PP. 167-170; BIBL. 7 REF.Serial Issue

THICK-FILM RUTHENIUM RESISTOR PASTES. NEW COMPOSITIONS FOR SCREEN-PRINTED CIRCUITSLEMON TH.1973; PLATINUM METALS REV.; G.B.; DA. 1973; VOL. 17; NO 1; PP. 14-20; BIBL. 6 REF.Serial Issue

DOPOS TECHNOLOGY FOR MICROWAVE TRANSISTORSKAMIOKA H; ISHII K; TAKAGI M et al.1972; FUJITSU SCI. TECH. J.; JAP.; DA. 1972; VOL. 8; NO 4; PP. 147-168; BIBL. 9 REF.Serial Issue

EXPERIMENTS WITH GAAS SCHOTTKY BARRIER IMPATT DIODESNIO K; KADOO S.1972; N.H.K. LAB. NOTE; JAP.; DA. 1972; NO 156; PP. 1-8; BIBL. 6 REF.Serial Issue

IMPROVED CUTOFF CHARACTERISTICS OF SEMICONDUCTOR MATERIALS USING NEW DIAMOND WHEELKOBAYASHI A; KOMINE N; KUNIYOSHI S et al.1972; TOSHIBA REV., INTERNATION. ED.; JAP.; DA. 1972; NO 73; PP. 29-34; BIBL. 4 REF.Serial Issue

CIRCUITS SCHOTTKY TTLMAIRET M.1972; ELECTR. ELECTRON. MOD., INDUSTR.; FR.; DA. 1972; VOL. 42; NO 268; PP. 16-20Serial Issue

CONDITIONS THERMODYNAMIQUES DE PREPARATION DE QUELQUES MARQUES INDUSTRIELLES DE FERRITESORLOV GN; POPOV GP; CHUFAROV GI et al.1972; ZH. FIZ. KHIM.; S.S.S.R.; DA. 1972; VOL. 46; NO 6; PP. 1557-1558; BIBL. 5 REF.Serial Issue

A METHOD OF PRODUCING RELIABLE SUPERCONDUCTING WEAK LINKSBRUCK A.1972; J. PHYS. E; G.B.; DA. 1972; VOL. 5; NO 11; PP. 1047-1049; BIBL. 2 REF.Serial Issue

MICROWAVE BARITT DIODES. II. FABRICATION PROCESSES AND EXPERIMENTAL RESULTSHARTH W; CLAASSEN M.1973; NACHR.-TECH. Z.; DTSCH.; DA. 1973; VOL. 26; NO 2; PP. 87-90; ABS. ALLEM.; BIBL. 29 REF.Serial Issue

MICROWAVE CHARACTERISTICS OF ION-IMPLANTED BIPOLAR TRANSISTORS = CARACTERISTIQUES HYPERFREQUENCE DE TRANSISTORS BIPOLAIRES A IMPLANTATION IONIQUEBARNOSKI MK; LOPER DD.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 4; PP. 441-451; H.T. 1; BIBL. 9 REF.Serial Issue

TRANSISTOR A INJECTION DANS UN CHAMP MAGNETIQUECONSTANTINESCU C; MUNTEANU I; ZENO S et al.1972; STUD. CERC. FIZ.; ROMAN.; DA. 1972; VOL. 24; NO 10; PP. 1189-1195; ABS. ANGL.; BIBL. 2 REF.Serial Issue

GAAS GUNN DIODES. LOW-NOISE, LOW-BIAS VOLTAGE, WIDE BANDWIDTHS, AND HIGH RELIABILITY MAKE GUNN DIODES VERY ATTRACTIVEROSZTOCZY FE; GOLDWASSER RE; RUTTAN TG et al.1973; MICROWAVE J.; U.S.A.; DA. 1973; VOL. 16; NO 2; PP. 51-54 (3 P.)Serial Issue

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