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Results 1 to 25 of 38164

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VLSI METALLIZATION USING ALUMINIUM AND ITS ALLOYSPRAMANIK D; SAXENA AN.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 1; PP. 127-133; BIBL. 20 REF.Article

X-RAY LITHOGRAPHY APPLIED TO THE FABRICATION OF ONE MICROMETER N-CHANNEL METAL OXIDE SEMICONDUCTOR CIRCUITSFULS EN.1983; OPTICAL ENGINEERING; ISSN 0091-3286; USA; DA. 1983; VOL. 22; NO 2; PP. 199-202; BIBL. 8 REF.Article

CONTRAST ENHANCED PHOTOLITHOGRAPHYGRIFFING BF; WEST PR.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 1; PP. 14-16; BIBL. 7 REF.Article

APPLICATION OF ZONE PLATES TO ALIGNMENT IN X-RAY LITHOGRAPHYFELDMAN M; WHITE AD; WHITE DL et al.1983; OPTICAL ENGINEERING; ISSN 0091-3286; USA; DA. 1983; VOL. 22; NO 2; PP. 203-207; BIBL. 13 REF.Article

MICROSTRUCTURE FABRICATION.KEYES RW.1977; SCIENCE; U.S.A.; DA. 1977; VOL. 196; NO 4293; PP. 945-949; BIBL. 9 REF.Article

DO DISLOCATIONS HOLD TECHNOLOGICAL PROMISE.SCHOCKLEY W.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 1; PP. 75-78; BIBL. 2 REF.Article

ETCHING CHARACTERISTICS FOR ORGANOSILICAENDO N; MATSUI S.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 2; PART. 2; PP. L109-L111; BIBL. 6 REF.Article

PREPARATION OF LARGE-AREA, ELECTRON-TRANSPARENT SILICON SPECIMENS BY ANISOTROPIC ETCHINGVARKER CJ; CHANG LH.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 143-146; BIBL. 8 REF.Article

NATURAL LITHOGRAPHYDECKMAN HW; DUNSMUIR JH.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 4; PP. 377-379; BIBL. 8 REF.Article

OPTIMAL SELECTION OF IC FABRICATION PARAMETERSKARMOKOLIAS C; PORTNOY WM; SAEKS RE et al.1981; INT. J. CIRCUIT; ISSN 0098-9886; USA; DA. 1981; VOL. 9; NO 2; PP. 211-215; BIBL. 3 REF.Article

DIFFERENT CHIP INTERCONNECTING TECHNIQUESDANIELSSON H.1980; ELECTROCOMPON. SCI. TECHNOL.; ISSN 0305-3091; GBR; DA. 1980; VOL. 7; NO 1-3; PP. 149-154; BIBL. 8 REF.Article

ALTERNATIVE WAY OF MAKING BUMPS FOR TABKOPEJKO K; VILIM J.1979; EUROPEAN HYBRID MICROELECTRONICS CONFERENCE. 2/1978/GHENT; NLD; PIJNACKER: DUTCH EFFICIENCY BUREAU; DA. 1979; PP. 393-397; BIBL. 5 REF.Conference Paper

OPTIMISATION PAR ORDINATEUR DE LA FABRICATION DES MASQUESLE CARPENTIER J.1977; COLLOQUE INTERNATIONAL SUR LA MICROLITHOGRAPHIE, MICROELECTRONIQUE, OPTIQUE; FRA; DA. 1977; DGRST-777 1946; PP. 35-40; ABS. ENGConference Paper

REACTIVE ION ETCHING OF POLYSILICON AND TANTALUM SILICIDEBEINVOGL W; HASLER B.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 125-130; BIBL. 26 REF.Article

DEVELOPMENTS IN FABRICATION TECHNIQUES.LOAD J.1977; AUSTRAL. ELECTRON. ENGNG; AUSTRAL.; DA. 1977; VOL. 10; NO 12; PP. 42-44Article

THE EDUCATION CONNECTION.RAMSOM CJ.1976; IN: INT. ELECTRON. PACKAG. PROD. CONF. PROC. TECH. PROGRAMME; BRIGHTON, ENGL.; 1976; SURBITON; KIVER COMMUNICATIONS; DA. 1976; PP. 32-41; BIBL. 10 REF.Conference Paper

MICROCIRCUITS: GROWTH OF A SHRINKING INDUSTRY. II. IMPROVING METAL OXIDE CIRCUITSFORTE S.1973; ELECTRONIQUE; SUISSE; DA. 1973; VOL. 2; NO 1; PP. 73-74Serial Issue

UTILISATION D'UN RESEAU DE DIFFRACTION POUR LA DETERMINATION DES ARRONDIS SUR LES ANGLES DES ELEMENTS TOPOLOGIQUES DES MASQUES PHOTOGRAPHIQUESVOLKOV VV; GERASIMOV LL; KAPAEV VV et al.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; NO 4; PP. 329-336; BIBL. 4 REF.Article

QUANTITATIVE EXAMINATION OF PHOTOFABRICATED PROFILES. III: MEASUREMENT OF ETCH FACTORALLEN DM; HORNE DF; STEVENS GWW et al.1978; J. PHOTOGR.; GBR; DA. 1978; VOL. 26; NO 6; PP. 242-245; BIBL. 3 REF.Article

BALL SLIDES KEEP WAFER CUTTER IN GROOVEMACNICHOL A.1978; INSULAT. CIRCUITS; USA; DA. 1978; VOL. 24; NO 8; PP. 31-32Article

SESCOSEM: "HAUTE-INTEGRATION" A SAINT-EGREVE.1975; TOUTE ELECTRON.; FR.; DA. 1975; NO 404; PP. 14-15Article

HIGH RATE ALUMINIUM ETCHING IN A BATCH LOADED REACTIVE ION ETCHERSAIA RJ; GOROWITZ B.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 247-251Article

EQUIPEMENTS POUR LA MICROLITHOGRAPHIE - SITUATION ET TENDANCES DE DEVELOPPEMENTKASCHLIK K.1979; REV. IENA; DDR; DA. 1979; VOL. 19; NO 2; PP. 57-60; BIBL. 18 REF.Article

VERTIKALE MASKENSEGMENTIERUNG - EINE BASIS FUER DAS LAYOUT-TESTSYSTEM LOCATE = SEGMENTATION VERTICALE DES MASQUES. UNE BASE POUR LE SYSTEME DE CONTROLE DU TRACE LOCATEJAGER U.1979; TECH. MITT.-AEG-TELEFUNKEN; ISSN 0040-1447; DEU; DA. 1979; VOL. 69; NO 4; PP. 141-142; BIBL. 8 REF.Article

NEW CLEANING SYSTEM REMOVES REMNANT PARTICLES.WORKMAN DB.1978; EVAL. ENGNG; USA; DA. 1978; VOL. 17; NO 5; PP. 38-41; (3 P.)Article

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