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THE EFFECT OF TEMPERATURE ON THE SURFACE STRUCTURE AND STOICHIOMETRY OF (100) INP SURFACES.BAYLISS CR; KIRK DL.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 29; NO 1; PP. 97-106; BIBL. 8 REF.Article

DIFFRACTION OF HE ATOMS AT A SI(100) SURFACE.CARDILLO MJ; BECKER GE.1978; PHYS. REV. LETTERS; U.S.A.; DA. 1978; VOL. 40; NO 17; PP. 1148-1151; BIBL. 14 REF.Article

LONG RANGE ORDER OF THE (100) SURFACE OF AUCU3HOJLUND NIELSEN PE.1973; PHYS. LETTERS, A; NETHERL.; DA. 1973; VOL. 42; NO 7; PP. 468; BIBL. 3 REF.Serial Issue

SELECTIVE ETCHING STUDIES ON CESIUM IODIDE CRYSTALS.SANGWAL K; URUSOVSKAYA AA.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 41; NO 2; PP. 216-224; BIBL. 17 REF.Article

OXYGEN PARTIAL-PRESSURE DEPENDENCE OF THE OXIDATION-INDUCED SURFACE STACKING FAULTS IN (100) N SILICON.MURARKA SP.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 12; PP. 5020-5026; BIBL. 23 REF.Article

REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION FROM STEPPED SURFACESHOLLOWAY S.1979; PHYS. LETTERS, A; NLD; DA. 1979; VOL. 71; NO 5-6; PP. 476-480; BIBL. 16 REF.Article

SURFACE STRUCTURE ANALYSIS OF CS/PT(100) BY LEED.GRANDKE T; HEINZ K.1977; Z. NATURFORSCH., A; DTSCH.; DA. 1977; VOL. 32; NO 9; PP. 1049-1052; BIBL. 12 REF.Article

SOLUTION GROWTH AND ELECTROCRYSTALLIZATION.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 42; PP. 183-238; BIBL. DISSEM.; (INT. CONF. CRYST. GROWTH. 5; CAMBRIDGE; MASS.; 1977)Conference Paper

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