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Results 1 to 25 of 8684

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FIGURING MINIATURE ASPHERICS. ION POLISHINGKARGER AM.1973; APPL. OPT.; U.S.A.; DA. 1973; VOL. 12; NO 3; PP. 451-454; BIBL. 2 REF.Serial Issue

RELAXATION D'UN FAISCEAU IONIQUE INJECTE DANS LE PLASMA TRANSVERSALEMENT A UN CHAMP MAGNETIQUEBORISENKO AG; KIRICHENKO GS.1972; ZH. EKSPER. TEOR. FIZ., PIS'MA REDAKC.; S.S.S.R.; DA. 1972; VOL. 16; NO 6; PP. 349-352; BIBL. 12 REF.Serial Issue

NEUTRALISED ION BEAM MILLING: ANOMALOUS SPUTTER YIELD BEHAVIOURPITT CW; SPINGH SP.1980; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1980; VOL. 16; NO 19; PP. 721-722; BIBL. 12 REF.Article

A NEW PRODUCTION TECHNIQUE: ION MILLING. II: APPLICATIONSBOLLINGER D; FINK R.1980; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1980; VOL. 23; NO 12; PP. 97-103; BIBL. 10 REF.Article

PHYSICS OF ION PLATING AND ION BEAM DEPOSITIONAISENBERG S; CHABOT RW.1973; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1973; VOL. 10; NO 1; PP. 104-107; BIBL. 7 REF.Serial Issue

ION MILLING (ION BEAM ETCHING), 1975-1978: A BIBLIOGRAPHYHAWKINS DT.1979; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1979; VOL. 16; NO 4; PP. 1051-1071Article

THE DEVELOPMENT OF SURFACE MORPHOLOGY DURING SPUTTERING WITH SPATIALLY NON-UNIFORM ION BEAMSNOBES MJ; WEBB RP; CARTER G et al.1980; RAD. EFFECTS; GBR; DA. 1980; VOL. 50; NO 3-6; PP. 133-138; BIBL. 14 REF.Article

A NEW PRODUCTION TECHNIQUE: ION MILLINGBOLLINGER D; FINK R.1980; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1980; VOL. 23; NO 11; PP. 79-84; BIBL. 11 REF.Article

ADVANCES IN ION BEAM MILLINGROBERTSON DD.1978; SOLID STATE TECHNOL.; USA; DA. 1978; VOL. 21; NO 12; PP. 57-60Article

A SIMPLE MEASURING METHOD FOR THE CHARACTERISTIC CURVE OF S(THETA ) COS THETA /S(O)KOWALSKI ZW.1981; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1981; VOL. 16; NO 12; PP. 3512-3513; BIBL. 13 REF.Article

ETCHED PROFILE OF SI BY ION-BOMBARDMENT-ENHANCED ETCHINGMORIWAKI K; ARITOME H; NAMBA S et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 7; PP. 1305-1309; BIBL. 7 REF.Article

MULTI-APERTURE ION SOURCE WITH A DEFLECTABLE FOCUSED BEAM FOR COMPOSITIONAL CONTROL IN SPUTTER DEPOSITIONSMITS JW.1981; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1981; VOL. 19; NO 3; PP. 704-708; BIBL. 11 REF.Article

EVOLUTION D'UNE SURFACE SOUMISE A UN BOMBARDEMENT IONIQUE.DUCOMMUN JP.1974; ; S.L.; DA. 1974; PP. 1-99; H.T. 8; BIBL. 1 P. 1/2; (THESE DOCT. 3E. CYCLE, SPEC. CRISTALLOGR., MENTION SCI. MATER.; PARIS VI)Thesis

MASS SPECTROMETRY APPLIED TO A REACTIVE ION MILLDENNISON RW.1980; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1980; VOL. 23; NO 9; PP. 117-120; BIBL. 12 REF.Article

THE EFFECT OF CATHODE MATERIALS ON REACTIVE ION ETCHING OF SILICON AND SILICON DIOXIDE IN A CF4 PLASMA.EPHRATH LM.1978; J. ELECTRON. MATER.; U.S.A.; DA. 1978; VOL. 7; NO 3; PP. 415-428; BIBL. 11 REF.Article

BROAD BEAM ION SOURCE OPERATION WITH FOUR COMMON GASESPAK S; SITES JR.1980; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1980; VOL. 51; NO 4; PP. 536-539; BIBL. 16 REF.Article

DEPOT DE COUCHES A PARTIR D'UN PLASMA A BASSE TEMPERATURE ET DE FAISCEAUX IONIQUESOSIPOV KA; FOLMANIS G EH.1973; MOSKVA; NAUKA; DA. 1973; PP. 1-87; BIBL. 3 P. 1/2Book

A LARGE DOUBLE PLASMA DEVICE FOR PLASMA BEAM AND WAVE STUDIESTAYLOR RJ; MACKENZIE KR; IKEZI H et al.1972; REV. SCI. INSTRUM.; U.S.A.; DA. 1972; VOL. 43; NO 11; PP. 1675-1678; BIBL. 8 REF.Serial Issue

NANOELECTRONICSPICQUENDAR JE.1972; IN: ELECTRON ION BEAM SCI. TECHNOL. VTH INT. CONF.; PRINCETON; ELECTROCHEM. SOC.; DA. 1972; PP. 31-48Conference Proceedings

EXTRACTION OF HIGH CURRENT ION BEAMS WITH LAMINATED FLOWKANAYA K; KOGA K; TOKI K et al.1972; J. PHYS. E; G.B.; DA. 1972; VOL. 5; NO 7; PP. 641-648; BIBL. 18 REF.Serial Issue

FORMATION DE PARTICULES NEUTRES DANS LES FAISCEAUX IONIQUES ACCELERES DANS UN CYCLOTRONSLYUSARENKO LI; TOKAREVSKIJ VV.1972; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1972; NO 4; PP. 24-25; BIBL. 2 REF.Serial Issue

MOLECULAR EROSION OF ICE BY KEV ION BOMBARDMENTCIAVOLA G; FOTI G; TORRISI L et al.1982; RADIATION EFFECTS; ISSN 0033-7579; GBR; DA. 1982; VOL. 65; NO 1-4; PP. 167-172; BIBL. 11 REF.Article

ION ETCHING OF THIN WINDOWS IN SILICON.SPENCER EG; LENZO PV; SCHMIDT PH et al.1974; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1974; VOL. 11; NO 5; PP. 863-864; BIBL. 9 REF.Article

ION BEAM ETCHING WITH REACTIVE GASESBOLLINGER LD.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 1; PP. 99-108; BIBL. 15 REF.Article

ION-INDUCED AMORPHOUS AND CRYSTALLINE PHASE FORMATION IN AL/NI, AL/PD, AND AL/PT THIN FILMSHUNG LS; NASTASI M; GYULAI J et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 672-674; BIBL. 9 REF.Article

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