CRYSTAL GROWTH BY THE ELECTROLYSIS OF MOLTEN SALTSFEIGELSON RS.1980; ADV. CHEM. SER.; ISSN 0065-2393; USA; DA. 1980; NO 186; PP. 243-275; BIBL. 24 REF.Conference Paper

THE GROWTH OF TERNARY SEMICONDUCTOR CRYSTALS SUITABLE FOR DEVICE APPLICATIONS.FEIGELSON RS.1975; J. PHYS., COLLOQUE; FR.; DA. 1975; PP. 57-66; ABS. FR.; BIBL. 14 REF.; (2EME CONF. INT. COMPOSES SEMICOND. TERNAIRES; STRASBOURG; 1975)Conference Paper

ELECTRODEPOSITION OF SOLAR SILICONELWELL D; FEIGELSON RS.1982; SOL. ENERGY MATER.; ISSN 0165-1633; NLD; DA. 1982; VOL. 6; NO 2; PP. 123-145; BIBL. 42 REF.Article

SPRAY PYROLYSIS OF COMPLEX SPHALERITE MATERIALSPAMPLIN BR; FEIGELSON RS.1979; MATER. RES. BULL.; USA; DA. 1979; VOL. 14; NO 1; PP. 1-4; BIBL. 11 REF.Article

VERTICAL BRIDGMAN GROWTH OF CDGEAS₂ WITH CONTROL OF INTERFACE SHAPE AND ORIENTATIONFEIGELSON RS; ROUTE RK.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 49; NO 2; PP. 261-273; BIBL. 22 REF.Article

OPTICAL IMAGING OF GROWTH DEFECTS IN INFRARED CRYSTALSFEIGELSON RS; ROUTE RK.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 49; NO 2; PP. 399-402Article

NEW PHASES IN THE CD-GE-AS SYSTEMPAMPLIN BR; FEIGELSON RS.1979; MATER. RES. BULL.; USA; DA. 1979; VOL. 14; NO 2; PP. 263-266; BIBL. 12 REF.Article

EFFECTS OF HEAT PRETREATMENT OF STARTING MATERIALS ON THE OPTICAL TRANSPARENCY OF CDGEAS₂ CRYSTALSBORSHCHEVSKY AS; ROUTE RK; FEIGELSON RS et al.1980; MATER. RES. BULL.; ISSN 0025-5408; USA; DA. 1980; VOL. 15; NO 4; PP. 409-414; BIBL. 16 REF.Article

ELECTROCOATING OF SILICON AND ITS DEPENDENCE ON THE TIME OF ELECTROLYSIS = DEPOT ELECTROLYTIQUE DE SILICIUM. EFFET DE LA DUREE DE L'ELECTROLYSERAO GM; ELWELL D; FEIGELSON RS et al.1981; SURF. TECHNOL.; ISSN 0376-4583; CHE; DA. 1981; VOL. 13; NO 4; PP. 331-337; BIBL. 11 REF.Article

THE SYNTHESIS OF GAAS BY MOLTEN SALT ELECTROLYSIS.DE MATTEI RC; ELWELL D; FEIGELSON RS et al.1978; J. CRYST. GROWTH; NLD; DA. 1978; VOL. 43; NO 5; PP. 643-644; BIBL. 5 REF.Article

CRYSTAL GROWTH BY THE ELECTROCHEMICAL CZOCHRALSKI TECHNIQUE (ECT).DEMATTEI RC; HUGGINS RA; FEIGELSON RS et al.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 34; NO 1; PP. 1-10; BIBL. 5 REF.Article

ELECTRODEPOSITION OF SILICON ONTO GRAPHITERAO GM; ELWELL D; FEIGELSON RS et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 8; PP. 1708-1711; BIBL. 8 REF.Article

ELECTROWINNING OF SILICON FROM K₂SIF₆-MOLTEN FLUORIDE SYSTEMSRAO GM; ELWELL D; FEIGELSON RS et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 9; PP. 1940-1944; BIBL. 17 REF.Article

ELECTRODEPOSITION OF SILICON CARBIDEELWELL D; FEIGELSON RS; SIMKINS MM et al.1982; MATER. RES. BULL.; ISSN 0025-5408; USA; DA. 1982; VOL. 17; NO 6; PP. 697-706; BIBL. 10 REF.Article

ELECTRODEPOSITION OF SILICON AT TEMPERATURES ABOVE ITS MELTING POINTDE MATTEI RC; ELWELL D; FEIGELSON RS et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 8; PP. 1712-1714; BIBL. 9 REF.Article

CONDITIONS FOR STABLE GROWTH OF EPITAXIAL GAP LAYERS BY MOLTEN SALT ELECTRODEPOSITIONDE MATTEI RC; ELWELL D; FEIGELSON RS et al.1978; J. CRYST. GROWTH; NLD; DA. 1978; VOL. 44; NO 5; PP. 545-552; BIBL. 6 REF.Article

SOLUTION GROWTH OF CDGEAS₂.FEIGELSON RS; ROUTE RK; SWARTS HW et al.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 28; NO 1; PP. 138-144; BIBL. 13 REF.Article

CHARACTERIZATION OF ELECTRODEPOSITED SILICON ON GRAPHITERAO GM; ELWELL D; FEIGELSON RS et al.1982; SOL. ENERGY MATER.; ISSN 0165-1633; NLD; DA. 1982; VOL. 7; NO 1; PP. 15-21; BIBL. 7 REF.Article

ELECTRODEPOSITION OF INDIUM PHOSPHIDEELWELL D; FEIGELSON RS; SIMKINS MM et al.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 51; NO 2; PP. 171-177; BIBL. 9 REF.Article

CRYSTAL GROWTH OF CESIUM CADMIUM CHLORIDE CSCDCL₃AHN KS; CARRANZA RA; ELWELL D et al.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 50; NO 4; PP. 775-778; BIBL. 5 REF.Article

SINGLE CRYSTAL GROWTH OF ZN₃P₂FAA CHING WANG; BUBE RH; FEIGELSON RS et al.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 55; NO 2; PP. 268-272; BIBL. 14 REF.Article

SURFACE STRUCTURE AND ELECTROLYTIC GROWTH STABILITY OF LAB₆ CRYSTALS.ELWELL D; ZUBECK IV; FEIGELSON RS et al.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 29; NO 1; PP. 65-68; BIBL. 3 REF.Article

EFFICIENT SECOND-HARMONIC GENERATION OF ND:YAG LASER RADIATION USING WARM PHASE-MATCHING LINBO₃BYER RL; PARK YK; FEIGELSON RS et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 1; PP. 17-19; BIBL. 27 REF.Article

ELECTRON PARAMAGNETIC RESONANCE OF AN IRON-ASSOCIATED DEFECT IN AGGAS₂VON BARDE LEBEN HJ; GOLTZENE A; SCHWAB C et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 21; NO 5; PP. 1757-1762; BIBL. 10 REF.Article

II-VI SOLID-SOLUTION FILMS BY SPRAY PYROLYSIS.FEIGELSON RS; N'DIAYE A; SHAIW YIH YIN et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 7; PP. 3162-3164; BIBL. 14 REF.Article