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L'IMPORTANCE DE LA LAINE DE VERRE TCHECOSLOVAQUE POUR LA PROTECTION CONTRE LE BRUITSKOVRONSKY O; FEIT Z.1973; CESKOSL. HYG.; CESKOSL.; DA. 1973; VOL. 18; NO 3; PP. 150-155; ABS. RUSSE ANGL.; BIBL. 14 REF.Serial Issue

PHOTODEPOSITION OF AMORPHOUS SELENIUM FILMS BY THE "SELOR" PROCESS. I. MAIN FEATURES OF THE PROCESS, FILM STRUCTURE.PERAKH M; PELED A; FEIT Z et al.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 50; PP. 273-282; BIBL. 10 REF.Article

LONG WAVELENGTH PB1-XSNXTE HOMOSTRUCTURE DIODE LASERS HAVING A GALLIUM-DOPED CLADDING LAYERZUSSMAN A; FEIT Z; EGER D et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 4; PP. 344-346; BIBL. 16 REF.Article

Liquid phase epitaxy grown PbSnSeTe/PbSe double heterostructure diode lasersFEIT, Z; FUCHS, J; KOSTYK, D et al.Infrared physics & technology. 1996, Vol 37, Num 4, pp 439-443, issn 1350-4495Article

Low-threshold PbEuSeTe double-heterostructure lasers grown by molecular beam epitaxyFEIT, Z; WOODS, R; KOSTYK, D et al.Applied physics letters. 1989, Vol 55, Num 1, pp 16-18, issn 0003-6951, 3 p.Article

Temperature dependence of mobility in heavily doped n-type PbTe layers grown by LPEFEIT, Z; ZEMEL, A; EGER, D et al.Physics letters. A. 1983, Vol 98A, Num 8-9, pp 451-454, issn 0375-9601Article

Diffusion length and lifetime in highly Ga-doped PbSnTe layers grown by liquid-phase epitaxySHAHAR, A; FEIT, Z; ZUSSMAN, A et al.Journal of applied physics. 1989, Vol 66, Num 6, pp 2455-2457, issn 0021-8979, 3 p.Article

Reflection high-energy electron diffraction intensity oscillations in IV-VI compound semiconductorsFUCHS, J; FEIT, Z; PREIER, H et al.Applied physics letters. 1988, Vol 53, Num 10, pp 894-896, issn 0003-6951Article

Quasilocal impurity states in Pb1-xSnxTe and PbSe0.092 liquid-phase epitaxial layers doped with group-III elementsFEIT, Z; EGER, D; ZEMEL, A et al.Physical review. B, Condensed matter. 1985, Vol 31, Num 6, pp 3903-3909, issn 0163-1829Article

Phase equilibria and liquid phase epitaxy grown of PbSnSeTe lattice matched to PbSeMCCANN, P. J; FUCHS, J; FEIT, Z et al.Journal of applied physics. 1987, Vol 62, Num 7, pp 2994-3000, issn 0021-8979Article

Molecular beam epitaxy grown PbEuSeTe buried-heterostructure lasers with continuous wave operation at 195 KFEIT, Z; KOSTYK, D; WOODS, R. J et al.Applied physics letters. 1990, Vol 57, Num 27, pp 2891-2893, issn 0003-6951, 3 p.Article

Molecular beam epitaxy-grown PbSnTe-PbEuSeTe buried heterostructure diode lasersFEIT, Z; KOSTYK, D; WOODS, R. J et al.IEEE Photonics technology letters. 1990, Vol 2, Num 12, pp 860-862Article

Measurements of the refractive index of PbEuTe in the 3-10-μm region of the infraredFEIT, Z; WOODS, R; KOSTYK, D et al.Applied optics. 1993, Vol 32, Num 6, pp 966-970, issn 0003-6935Conference Paper

Electrical conduction in polyimide between 20 and 350°CSMITH, F. W; NEUHAUS, H. J; SENTURIA, S. D et al.Journal of electronic materials. 1987, Vol 16, Num 1, pp 93-106, issn 0361-5235Article

GaN photodiodes grown by MBE on HVPE and ELO-HVPE GaN\sapphire substratesSAMPATH, A. V; ILIOPOULOS, E; SETH, K et al.SPIE proceedings series. 2000, pp 311-318, isbn 0-8194-3565-1Conference Paper

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