au.\*:("FEWSTER PF")
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ABSOLUTE LATTICE PARAMETER MEASUREMENTS OF EPITAXIAL LAYERSFEWSTER PF.1982; J. APPL. CRYSTALLOGR.; ISSN 0021-8898; DNK; DA. 1982; VOL. 15; NO 3; PP. 275-278; BIBL. 6 REF.Article
A DEFECT MODEL FOR UNDOPED AND TELLURIUM DOPED GALLIUM ARSENIDEFEWSTER PF.1981; J. PHYS. CHEM. SOLIDS; ISSN 0022-3697; USA; DA. 1981; VOL. 42; NO 10; PP. 883-889; BIBL. 23 REF.Article
DISODIUM D-3-PHOSPHOGLYCERATE, A SUBSTRATE TO PHOSPHOGLYCERATE KINASEFEWSTER PF; FENN RH.1982; ACTA CRYSTALLOGR., B; ISSN 0567-7408; DNK; DA. 1982; VOL. 38; NO 1; PP. 282-284; BIBL. 15 REF.Article
THE EFFECT OF SILICON DOPING ON THE LATTICE PARAMETER OF GALLIUM ARSENIDE GROWN BY LIQUID-PHASE EPITAXY, VAPOUR-PHASE EPITAXY AND GRADIENT-FREEZE TECHNIQUEFEWSTER PF; WILLOUGHBY AFW.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 50; NO 3; PP. 648-653; BIBL. 19 REF.Article
CRYSTALLOGRAPHIC POLARITY AND CHEMICAL ETCHING OF CDXHG1-XTEFEWSTER PF; COLE S; WILLOUGHBY AFW et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4568-4571; BIBL. 8 REF.Article