TWO-DIMENSIONAL MODELLING OF S.O.S. TRANSISTORS.FICHTNER W.1978; I.E.E. J. SOLID-STATE ELECTRON DEVICES; GBR; DA. 1978; VOL. 2; NO 2; PP. 47-51; BIBL. 19 REF.Article

MOS MODELLING BY ANALYTICAL APPROXIMATIONS. I: SUBTHRESHOLD CURRENT AND THRESHOLD VOLTAGEFICHTNER W; POETZL HW.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 46; NO 1; PP. 33-55; BIBL. 45 REF.Article

SUBTHRESHOLD BEHAVIOUR OF E.S.F.I.-S.O.S. TRANSISTORS.KRANZER D; FICHTNER W.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 6; PP. 161-162; BIBL. 5 REF.Article

³⁵CL NQR SPECTROSCOPY OF THE (PO₂CL₂)^- AND POCL₃ GROUPS IN ME(PO₂CL₂)₂.2D (ME=MG,CA,MN; D=POCL₃,CH₃COOC₂H₅, CH₃COCH₃)FICHTNER W; WEISS A.1980; J. MOL. STRUCT.; ISSN 0022-2860; NLD; DA. 1980; VOL. 66; PP. 289-299; BIBL. 17 REF.Article

Physics of VLSI processing and process simulationFICHTNER, W.Applied solid state science. Supplement. 1985, Num 2, pp 119-336, issn 0194-2891, CArticle

TIME RESOLUTION OF GE AVALANCHE PHOTODIODES OPERATING AS PHOTON COUNTERS IN DELAYED COINCIDENCE.FICHTNER W; HACKER W.1976; REV. SCI. INSTRUM.; U.S.A.; DA. 1976; VOL. 47; NO 3; PP. 374-377; BIBL. 7 REF.Article

CURRENT-KINK NOISE OF N-CHANNEL ENHANCEMENT E.S.F.I.-M.O.S. S.O.S. TRANSISTORS.FICHTNER W; HOCHMAIR E.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 22; PP. 675-676; BIBL. 2 REF.Article

MOLECULAR COMPOUNDS OF HGCL₂ WITH ORGANIC DONORS A ³⁵CL NQR STUDY.FICHTNER W; WEISS A.1976; Z. NATURFORSCH., B; DTSCH.; DA. 1976; VOL. 31; NO 12; PP. 1626-1634; BIBL. 1 P.Article

ZWEIKERNIGE METALLCARBONYLKOMPLEXE MIT TETRAALKYLDISTIBAN UND BIS(DIPHENYLSTIBINO) METHAN-LIGANDEN = COMPLEXES DE METAUX CARBONYLES DINUCLEAIRES AVEC LES COORDINATS ORGANIQUES TETRAALKYLDISTIBANE ET LE BIS(DIPHENYLSTIBINO) METHANEBREUNIG HJ; FICHTNER W; KNOBLOCH TB et al.1978; Z. ANORG. ALLG. CHEM.; DDR; DA. 1978; VOL. 445; NO 8; PP. 215-218; ABS. ENG; BIBL. 7 REF.Article

A DESCRIPTION OF MOS INTERNODAL CAPACITANCES FOR TRANSIENT SIMULATIONSTAYLOR GW; FICHTNER W; SIMMONS JG et al.1982; IEEE TRANS. COMPUT.-AIDED DES. INTEGR. CIRCUITS SYST.; ISSN 50629X; USA; DA. 1982; VOL. 1; NO 4; PP. 150-156; BIBL. 9 REF.Article

EISEN- UND NICKELCARBONYLKOMPLEXE MIT SUBSTITUIERTEN DISTIBAN- UND ANTIMONIDE-LIGANDEN = COMPLEXES DE FER ET NICKEL CARBONYLE AVEC DES COORDINATS DISTIBINE SUBSTITUES ET ANTIMONIUROBREUNIG HJ; FICHTNER W; KNOBLOCH TP et al.1981; Z. ANORG. ALLG. CHEM.; ISSN 0044-2313; DDR; DA. 1981; VOL. 477; NO 6; PP. 126-132; ABS. ENG; BIBL. 15 REF.Article

EXPERIMENTAL RESULTS, ON SUBMICRON-SIZE P-CHANNEL MOSFET'SFICHTNER W; LEVIN RM; TAYLOR GW et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 2; PP. 34-37; BIBL. 11 REF.Article

SCHWINGUNGSSPEKTREN VON TETRAMETHYL-, ETHYL- UND -PHENYL-DISTIBAN = SPECTRES DE VIBRATION DES TETRAMETHYL-, -ETHYL- ET PHENYLDISTIBANESBREUNIG HJ; BREUNIG LYRITI V; FICHTNER W et al.1982; Z. ANORG. ALLG. CHEM.; ISSN 0044-2313; DDR; DA. 1982; VOL. 487; PP. 111-118; ABS. ENG; BIBL. 16 REF.Article

A module generator based in the PQ-tree algorithmHANSRUEDI HEEB; FICHTNER, W.IEEE transactions on computer-aided design of integrated circuits and systems. 1992, Vol 11, Num 7, pp 876-884, issn 0278-0070Article

Explanation and extension of the equivalent circuit approach for parameter extractionSCHUSTER, C; FICHTNER, W.IEEE microwave and guided wave letters. 1999, Vol 9, Num 10, pp 392-394, issn 1051-8207Article

Transistor sizing for large combinational digital CMOS circuitsHEUSLER, L. S; FICHTNER, W.Integration (Amsterdam). 1991, Vol 10, Num 2, pp 155-168, issn 0167-9260, 14 p.Article

A NOVEL BURIED-DRAIN DMOSFET STRUCTUREFICHTNER W; COOPER JA JR; TRETOLA AR et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1785-1791; BIBL. 36 REF.Article

Signal integrity analysis of interconnects using the FDTD method and a layer peeling techniqueSCHUSTER, C; FICHTNER, W.IEEE transactions on electromagnetic compatibility. 2000, Vol 42, Num 2, pp 229-233, issn 0018-9375Article

ELECTRON-BEAM LITHOGRAPHY FOR SMALL MOSFET'SWATTS RK; FICHTNER W; FULS EN et al.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1338-1345; BIBL. 20 REF.Article

Integration of price-depending demand reactions in an optimising energy emission model for the development of CO₂-mitigation strategiesWIETSCHEL, M; FICHTNER, W; RENTZ, O et al.European journal of operational research. 1997, Vol 102, Num 3, pp 432-444, issn 0377-2217Article

Automatic rectangle-based adaptive mesh generation without obtuse anglesMÜLLER, S; KELLS, K; FICHTNER, W et al.IEEE transactions on computer-aided design of integrated circuits and systems. 1992, Vol 11, Num 7, pp 855-863, issn 0278-0070Article

Cost-potential curves for onshore wind energy: A high-resolution analysis for GermanyMcKENNA, R; HOLLNAICHER, S; FICHTNER, W et al.Applied energy. 2014, Vol 115, pp 103-115, issn 0306-2619, 13 p.Article

Electromagnetic simulation of bonding wires and comparison with wide band measurementsSCHUSTER, C; LEONHARDT, G; FICHTNER, W et al.IEEE transactions on advanced packaging. 2000, Vol 23, Num 1, pp 69-79, issn 1521-3323Article

Current-handling and switching performance of MOS-controlled thyristor (MCT) structuresBAUER, F; HOLLENBECK, H; STOCKMEIER, T et al.IEEE electron device letters. 1991, Vol 12, Num 6, pp 297-299, issn 0741-3106, 3 p.Article

An adaptive rid refinement strategy for the drift-diffusion equationsBÜRGLER, J. F; COUGHRAN, W. M; FICHTNER, W et al.IEEE transactions on computer-aided design of integrated circuits and systems. 1991, Vol 10, Num 10, pp 1251-1258, issn 0278-0070Article