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Results 1 to 25 of 11733

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MECHANISM OF OPERATION OF FIELD-EFFECT DEVICESGUPTA RK.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 10; PP. 1011-1014; BIBL. 14 REF.Article

S-PARAMETER MODEL OF DUAL-GATE GAAS MESFETASHOKA H; TUCKER RS.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 2; PP. 39-40; BIBL. 2 REF.Article

ANALYSIS AND CHARACTERIZATION OF THE DEPLETION-MODE IGFETEL MANSY YA.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 3; PP. 331-340; BIBL. 11 REF.Article

CALCULATION OF THERMAL NOISE IN J.F.E.T.SSCHROEDER D; WEINHAUSEN G.1979; I.E.E. J. SOLID-STATE ELECTRON DEVICES; GBR; DA. 1979; VOL. 3; NO 5; PP. 137-141; BIBL. 11 REF.Article

SOME EFFECTS OF WAVE PROPAGATION IN THE GATE OF A MICROWAVE M.E.S.F.E.T.LADBROOKE PH.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 1; PP. 21-22; BIBL. 3 REF.Article

SUBMICROMETER GATE FABRICATION OF GAAS MESFET BY PLASMA ETCHINGTAKAHASHI S; MURAI F; KODERA H et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 10; PP. 1213-1218; BIBL. 9 REF.Article

DRAIN-VOLTAGE DEPENDENCE OF IGFET TURN-ON VOLTAGE.LUONG MO DANG.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 10; PP. 825-830; BIBL. 9 REF.Article

THICK FILM COMPATIBLE TRANSISTORS.AWATAR SINGH.1977; J. SCI. INDUSTR. RES.; INDIA; DA. 1977; VOL. 36; NO 3; PP. 118-120; BIBL. 7 REF.Article

A SOLID-STATE VARIABLE RESISTOR USING A JUNCTION FET.SUGITA E; YASUDA Y; AKIYA M et al.1977; REV. ELECTR. COMMUNIC. LAB.; JAP.; DA. 1977; VOL. 25; NO 7-8; PP. 788-796; BIBL. 5 REF.Article

V-GROOVE POWER JUNCTION FIELD-EFFECT TRANSISTOR FOR V.H.F. APPLICATIONS.MOK TD; SALAMA CAT.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 22; PP. 582-583; BIBL. 4 REF.Article

RESISTIVE-GATE-INDUCED THERMAL NOISE IN IGFET'STHORNBER KK.1981; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1981; VOL. 16; NO 4; PP. 414-415; BIBL. 3 REF.Article

DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOROGURA S; TSANG PJ; WALKER WW et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 424-432; BIBL. 23 REF.Article

RAUSCHMESSUNGEN AN SILIZIUM-SPERRSCHICHT-FETS = MESURES DE BRUIT SUR LES TRANSISTORS A EFFET DE CHAMP A COUCHE D'ARRET AU SILICIUMGURMANN P.1980; ELEKTRONIK (MUENCH.); ISSN 0013-5658; DEU; DA. 1980; VOL. 29; NO 19; PP. 85-89; BIBL. 5 REF.Article

A GENERAL FOUR-TERMINAL CHARGING-CURRENT MODEL FOR THE INSULATED-GATE FIELD-EFFECT TRANSISTOR. IROBINSON JA; EL MANSY YA; BOOTHROYD AR et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 5; PP. 405-410; BIBL. 8 REF.Article

HOW TO USE THE ON/OFF RELAY ACTION OF JUNCTION FIELD-EFFECT TRANSISTORS.BUCHANON JE.1977; DIGIT. DESIGN; U.S.A.; DA. 1977; VOL. 7; NO 8; PP. 26-34 (7P.)Article

JFET-TRANSISTOR YIELDS DEVICE WITH NEGATIVE RESISTANCE.PORTER JA.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 9; PP. 1098-1099; BIBL. 5 REF.Article

ANALYSIS OF FIELD DISTRIBUTION IN A GAAS M.E.S.F.E.T. AT LARGE DRAIN VOLTAGES.SONE J; TAKAYAMA Y.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 23; PP. 622-624; BIBL. 5 REF.Article

INVERSION-MODE INSULATED GATE GA0.47 IN0.53 AS FIELD-EFFECT TRANSISTORSWIEDER HH; CLAWSON AR; ELDER DI et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 3; PP. 73-74; BIBL. 9 REF.Article

ELECTRICAL PROPERTIES OF A TRIODE-LIKE SILICON VERTICAL-CHANNEL JFETOZAWA O.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 11; PP. 2115-2123; BIBL. 19 REF.Article

STATIC NEGATIVE RESISTANCE IN CALCULATED MESFET DRAIN CHARACTERISTICSNORTON DE; HAYES RE.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 3; PP. 570-572; BIBL. 10 REF.Article

TWO-DIMENSIONAL ELECTRON GAS M.E.S.F.E.T. STRUCTUREDELAGEBEAUDEUF D; DELESCLUSE P; ETIENNE P et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 17; PP. 667-668; BIBL. 10 REF.Article

AN IN0 . 43GA0 . 47 AS FUNCTION FIELD-EFFECT TRANSISTORLEHENY RF; NAHORY RE; POLLACK MA et al.1980; IEEE ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 6; PP. 110-111; BIBL. 10 REF.Article

LE TRANSISTOR STATIQUE A INDUCTION1978; ELECTRON. APPL. INDUSTR.; FRA; DA. 1978; NO 258; PP. 24-25Article

DETERMINATION OF DOPANT PROFILES BY VOLTAGE MEASUREMENTS.LEHOVEC K; CHIH HONG CHEN.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 3; PP. 284-286; BIBL. 10 REF.Article

UN NOUVEAU COMMUTATEUR ANALOGIQUE PERFORMANT ET ECONOMIQUE: LE VARAFET, UN SYSTEME INTEGRE A J-FET.1977; ELECTRON. APPL. INDUSTR.; FR.; DA. 1977; NO 242; PP. 25-27Article

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