Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("FIELD EFFECT TRANSISTOR")

Filter

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 17794

  • Page / 712

Export

Selection :

  • and

MECHANISM OF OPERATION OF FIELD-EFFECT DEVICESGUPTA RK.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 10; PP. 1011-1014; BIBL. 14 REF.Article

MODELLING THE M.E.S.F.E.T. OUTPUT NONLINEARITYMINASIAN RA.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 17; PP. 515-516; BIBL. 5 REF.Article

FLICKER NOISE IN SEMICONDUCTORS: NOT A TRUE BULK EFFECTVAN DER ZIEL A.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 10; PP. 883-884; BIBL. 7 REF.Article

CHARACTERISTICS OF J.F.E.T.S. TAKING THE SEPARATION OF GATE ELECTRODE FROM THE SOURCE AND DRAIN ELECTRODES INTO ACCOUNT.VISWANATHA KV; SATYAM M.1977; PROC. INST. ELECTR. ENGRS; G.B.; DA. 1977; VOL. 124; NO 6; PP. 525; BIBL. 3 REF.Article

EMITTER SPACE CHARGE LAYER TRANSIT TIME IN BIPOLAR JUNCTION TRANSISTORSRUSTAGI SC; CHATTOPADHYAYA SK.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 4; PP. 367-370; BIBL. 13 REF.Article

ON THE SCALING OF SI-MESFETSRAM GV; ELMASRY MI.1980; IEEE ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 12; PP. 259-262; BIBL. 31 REF.Article

CIAGLY MODEL TRANZYSTORA POLOWEGO ZLACZOWEGO (JFET) = MODELE CONTINU DU TRANSISTOR A EFFET DE CHAMP A JONCTIONTARCZYNSKI W.1980; ROZPR. ELEKTROTECH.; POL; DA. 1980; VOL. 26; NO 1; PP. 129-139; ABS. ENG/FRE/GER/RUS; BIBL. 10 REF.Article

INTENTIONAL SIDE ETCHING TO ACHIEVE LOW-NOISE GAAS F.E.T.MURAI F; KURONO H; KODERA H et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 11; PP. 316-318; BIBL. 3 REF.Article

STATUS OF POWER TRANSISTORS. BIPOLAR AND FIELD EFFECT.PITZALIS O JR.1977; MICROWAVE J.; U.S.A.; DA. 1977; VOL. 20; NO 2; PP. 30-61 (4P.); BIBL. 11 REF.Article

THE EVALUATION OF JFET MODEL PARAMETERS FOR COMPUTER SIMULATION.SMITH DH; ANDERSON HEB.1977; MONITOR; AUSTRAL.; DA. 1977; VOL. 38; NO 11; PP. 177-186; BIBL. 8 REF.Article

THE SATURATION EFFECT AND BREAKDOWN VOLTAGE OF THE JUNCTION FET.GORAL AB.1977; BULL. ACAD. POLON. SCI., SCI. TECH.; POLOGNE; DA. 1977; VOL. 25; NO 11; PP. 161-165; ABS. RUSSE; BIBL. 5 REF.Article

S-PARAMETER MODEL OF DUAL-GATE GAAS MESFETASHOKA H; TUCKER RS.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 2; PP. 39-40; BIBL. 2 REF.Article

ANALYSIS AND CHARACTERIZATION OF THE DEPLETION-MODE IGFETEL MANSY YA.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 3; PP. 331-340; BIBL. 11 REF.Article

CALCULATION OF THERMAL NOISE IN J.F.E.T.SSCHROEDER D; WEINHAUSEN G.1979; I.E.E. J. SOLID-STATE ELECTRON DEVICES; GBR; DA. 1979; VOL. 3; NO 5; PP. 137-141; BIBL. 11 REF.Article

SOME EFFECTS OF WAVE PROPAGATION IN THE GATE OF A MICROWAVE M.E.S.F.E.T.LADBROOKE PH.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 1; PP. 21-22; BIBL. 3 REF.Article

SUBMICROMETER GATE FABRICATION OF GAAS MESFET BY PLASMA ETCHINGTAKAHASHI S; MURAI F; KODERA H et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 10; PP. 1213-1218; BIBL. 9 REF.Article

DRAIN-VOLTAGE DEPENDENCE OF IGFET TURN-ON VOLTAGE.LUONG MO DANG.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 10; PP. 825-830; BIBL. 9 REF.Article

THICK FILM COMPATIBLE TRANSISTORS.AWATAR SINGH.1977; J. SCI. INDUSTR. RES.; INDIA; DA. 1977; VOL. 36; NO 3; PP. 118-120; BIBL. 7 REF.Article

A SOLID-STATE VARIABLE RESISTOR USING A JUNCTION FET.SUGITA E; YASUDA Y; AKIYA M et al.1977; REV. ELECTR. COMMUNIC. LAB.; JAP.; DA. 1977; VOL. 25; NO 7-8; PP. 788-796; BIBL. 5 REF.Article

V-GROOVE POWER JUNCTION FIELD-EFFECT TRANSISTOR FOR V.H.F. APPLICATIONS.MOK TD; SALAMA CAT.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 22; PP. 582-583; BIBL. 4 REF.Article

RESISTIVE-GATE-INDUCED THERMAL NOISE IN IGFET'STHORNBER KK.1981; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1981; VOL. 16; NO 4; PP. 414-415; BIBL. 3 REF.Article

DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOROGURA S; TSANG PJ; WALKER WW et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 424-432; BIBL. 23 REF.Article

RAUSCHMESSUNGEN AN SILIZIUM-SPERRSCHICHT-FETS = MESURES DE BRUIT SUR LES TRANSISTORS A EFFET DE CHAMP A COUCHE D'ARRET AU SILICIUMGURMANN P.1980; ELEKTRONIK (MUENCH.); ISSN 0013-5658; DEU; DA. 1980; VOL. 29; NO 19; PP. 85-89; BIBL. 5 REF.Article

A GENERAL FOUR-TERMINAL CHARGING-CURRENT MODEL FOR THE INSULATED-GATE FIELD-EFFECT TRANSISTOR. IROBINSON JA; EL MANSY YA; BOOTHROYD AR et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 5; PP. 405-410; BIBL. 8 REF.Article

HOW TO USE THE ON/OFF RELAY ACTION OF JUNCTION FIELD-EFFECT TRANSISTORS.BUCHANON JE.1977; DIGIT. DESIGN; U.S.A.; DA. 1977; VOL. 7; NO 8; PP. 26-34 (7P.)Article

  • Page / 712