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DEGRADATION OF DH LASERS CAUSED BY GROWTH OF DISLOCATION NETWORKSFIGIELSKI T.1980; CZECH. J. PHYS.; ISSN 0011-4626; CSK; DA. 1980; VOL. 30; NO 3; PP. 318-325; BIBL. 16 REF.Article

FORMATION OF ANTISITE DEFECTS BY GLIDING DISLOCATIONS IN SPHALERITE-STRUCTURE CRYSTALSFIGIELSKI T.1982; APPLIED PHYSICS. A, SOLIDS AND SURFACES; ISSN 0721-7250; DEU; DA. 1982; VOL. 29; NO 4; PP. 199-200; BIBL. 8 REF.Article

SPIN-DEPENDENT RECOMBINATION AT DISLOCATIONS IN HEAT TREATED SILICONMAKOSA A; FIGIELSKI T.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 91; NO 1; PP. K65-K67; BIBL. 8 REF.Article

EFFECT OF A SPHERICAL VOID ON THE GALVANOMAGNETIC EFFECTS IN CONDUCTING MEDIA.POHORYLES B; FIGIELSKI T.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 32; NO 2; PP. 387-393; ABS. ALLEM.; BIBL. 4 REF.Article

Antistructure disorder and its relation to dislocations in III―V semiconductorsFIGIELSKI, T.Crystal research and technology (1979). 1987, Vol 22, Num 10, pp 1263-1269, issn 0232-1300Article

Compensation in GaAs crystals due to anti-structure disorderFIGIELSKI, T.Applied physics. A, Solids and surfaces. 1984, Vol 35, Num 4, pp 255-261, issn 0721-7250Article

SPIN-DEPENDENT RECOMBINATION AT EXCHANGE-COUPLED DISLOCATION CENTRES IN SILICON.WOSINSKI T; FIGIELSKI T.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 83; NO 1; PP. 93-98; ABS. ALLEM.; BIBL. 13 REF.Article

Dislocations and antistructure defects in GaAsFIGIELSKI, T.Acta physica Polonica. A. 1987, Vol 72, Num 4, pp 537-545, issn 0587-4246Article

The stationary traversal time for tunnellingFIGIELSKI, T.Solid state communications. 1995, Vol 94, Num 2, pp 113-117, issn 0038-1098Article

Conservative climb of dislocations in crystals and its possible role in the processes of degradation of junction lasersFIGIELSKI, T.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1988, Vol 57, Num 5, pp 791-798, issn 0141-8610Article

Electron emission from extended defects : DLTS signal in case of dislocation trapsFIGIELSKI, T.Physica status solidi. A. Applied research. 1990, Vol 121, Num 1, pp 187-193, issn 0031-8965, 7 p.Article

Non-stoichiometric defects in GaAs crystalsFIGIELSKI, T.Physica status solidi. A. Applied research. 1987, Vol 102, Num 2, pp 493-498, issn 0031-8965Conference Paper

NEW INSIGHT INTO THE NATURE OF DISLOCATION ELECTRON STATES IN GE PROVIDED BY HYDROSTATIC PRESSURE EXPERIMENTSPOHORYLES B; JUNG J; FIGIELSKI T et al.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 100; NO 1; PP. K87-K89; BIBL. 7 REF.Article

SPIN-DEPENDENT PHOTOCONDUCTIVITY SPECTRUM OF DISLOCATED SILICON.WOSINSKI T; FIGIELSKI T; MAKOSA A et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 37; NO 1; PP. K57-K59; BIBL. 6 REF.Article

On the metastability of the EL2 defect in plastically deformed GaAsWOSINSKI, T; FIGIELSKI, T.Solid state communications. 1987, Vol 63, Num 10, pp 885-888, issn 0038-1098Article

Selected papers/Identification of defects in semiconductors, symposium: 7th. international summer school on defects in crystals, Szczyrk, Poland, 23-30 May, 1985FIGIELSKI, T.Acta physica Polonica. A. 1986, Vol 69, Num 3, pp 379-476, issn 0587-4246Conference Proceedings

Energy levels and electrical activity of dislocation electron states in GaAsWOSINSKI, T; FIGIELSKI, T.Acta physica Polonica. A. 1993, Vol 83, Num 1, pp 51-59, issn 0587-4246Article

Symmetry of the EL2 defect in GaAsFIGIELSKI, T; WOSINSKI, T.Physical review. B, Condensed matter. 1987, Vol 36, Num 2, pp 1269-1272, issn 0163-1829Article

Mesoscopic conductance oscillations associated with dislocations in semiconductorsFIGIELSKI, T; WOSINSKI, T; MAKOSA, A et al.Physica status solidi. B. Basic research. 2000, Vol 222, Num 1, pp 151-158, issn 0370-1972Article

Interface roughness : a reason of inaccessibility of the negative resistance region in resonant-tunneling devicesFIGIELSKI, T; WOSINSKI, T; MAKOSA, A et al.Superlattices and microstructures. 1998, Vol 24, Num 1, pp 69-74, issn 0749-6036Article

Arsenic antisite defects as the main electron traps in plastically deformed GaAsWOSINSKI, T; MORAWSKI, A; FIGIELSKI, T et al.Applied physics. A, Solids and surfaces. 1983, Vol 30, Num 4, pp 233-235, issn 0721-7250Article

Aharonov-Bohm interference of holes at dislocations in lattice-mismatched heterostructuresFIGIELSKI, T; WOSINSKI, T; MAKOSA, A et al.Journal de physique. III (Print). 1997, Vol 7, Num 7, pp 1515-1520, issn 1155-4320Conference Paper

Gettering or generation of the EL2 defects at dislocations in GaAs ?FIGIELSKI, T; WOSINSKI, T; MAKOSA, A et al.Physica status solidi. A. Applied research. 1992, Vol 131, Num 2, pp 369-375, issn 0031-8965Article

Double anion antisite in GaAs. The simplest member of EL2 family?FIGIELSKI, T; KACZMAREK, E; WOSINSKI, T et al.Applied physics. A, Solids and surfaces. 1985, Vol 38, Num 4, pp 253-261, issn 0721-7250Article

Deep-level defects at lattice-mismatched interfaces in GaAs-based heterojunctionsWOSINSKI, T; YASTRUBCHAK, O; MAKOSA, A et al.Journal of physics. Condensed matter (Print). 2000, Vol 12, Num 49, pp 10153-10160, issn 0953-8984Article

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