A UHV-COMPATIBLE ROUND WAFER HEATER FOR SILICON MOLECULAR BEAM EPITAXYFINEGAN SN; SWARTZ RG; MCFEE JH et al.1983; JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. B: MICROELECTRONICS PROCESSING AND PHENOMENA; ISSN 512982; USA; DA. 1983; VOL. 1; NO 2; PP. 497-500; BIBL. 5 REF.Article

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A QUANTITATIVE STUDY OF THE RELATIONSHIP BETWEEN INTERFACIAL CARBON AND LINE DISLOCATION DENSITY IN SILICON MOLECULAR BEAM EPITAXYMCFEE JH; SWARTZ RG; ARCHER VD et al.1983; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1983; VOL. 130; NO 1; PP. 214-216; BIBL. 9 REF.Article

IN-SITU LOW ENERGY BF₂⁺ ION DOPING FOR SILICON MOLECULAR BEAM EPITAXYSWARTZ RG; MCFEE JH; VOSCHENKOV AM et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 5; PP. 138-140; BIBL. 11 REF.Article