IMPURITY EFFECTS ON CONDUCTION IN HEAVILY DOPED N-TYPE SILICON.FINETTI M; MAZZONE AM.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 11; PP. 4597-4600; BIBL. 13 REF.Article

CONTACT RESISTIVITY OF TIN P⁺-SI AND N⁺-SIFINETTI M; SUNI I; NICOLET MA et al.1983; SOLAR CELLS; ISSN 0379-6787; CHE; DA. 1983; VOL. 9; NO 3; PP. 179-183; BIBL. 9 REF.Article

MULTI-SCAN ELECTRON BEAM SINTERING OF AL-SI OHMIC CONTACTSFINETTI M; SOLMI S; SONCINI G et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 6; PP. 539-543; BIBL. 8 REF.Article

Monte Carlo simulation of mixing of a multilayered target = Simulation par méthode de Monte Carlo du mélange d'une cible multicoucheMAZZONE, A. M; FINETTI, M.Radiation effects. 1986, Vol 87, Num 4, pp 155-161, issn 0033-7579Article

TEMPERATURE DEPENDENT CONDUCTIVITY OF CLOSELY COMPENSATED PHOSPHORUS-DOPED SILICON.FINETTI M; MAZZONI AM; PASSARI L et al.1977; PHILOS. MAG.; G.B.; DA. 1977; VOL. 35; NO 5; PP. 1141-1151; BIBL. 11 REF.Article

ELECTRICAL CHARACTERISTICS OF AMORPHOUS IRON-TUNGSTEN CONTACTS ON SILICONFINETTI M; PAN ETS; SUNI I et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 11; PP. 987-989; BIBL. 18 REF.Article

CHARACTERIZATION OF THERMALLY DIFFUSED AND ION-IMPLANTED SEMICRYSTALLINE SILICON SOLAR CELLSFINETTI M; OSTOJA P; SOLMI S et al.1980; SOL. CELLS; CHE; DA. 1980; VOL. 2; NO 2; PP. 101-107; BIBL. 12 REF.Article

ALUMINIUM-SILICON OHMIC CONTACT ON SHALLOW N⁺/P JUNCTIONSFINETTI M; OSTOJA P; SOLMI S et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 3; PP. 255-262; BIBL. 21 REF.Article

Metal/semiconductor contact resistivity and its determination from contact resistance measurementsSCORZONI, A; FINETTI, M.Materials science reports. 1988, Vol 3, Num 2, issn 0920-2307, 79-137 [59 p.]Serial Issue

SELF-ANNEALED ION IMPLANTED N⁺-P DIODESCEMBALI G; FINETTI M; MERLI PG et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 1; PP. 62-64; BIBL. 4 REF.Article

STABLE METALLIZATION SYSTEMS FOR SOLAR CELLSMAEENPAEAE M; SUNI I; SIGURD D et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 2; PP. 763-769; ABS. FRE; BIBL. 21 REF.Article

ELECTRICAL PROPERTIES AND STABILITY OF SUPERSATURATED PHOSPHORUS-DOPED SILICON LAYERSFINETTI M; NEGRINI P; SOLMI S et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 6; PP. 1313-1317; BIBL. 23 REF.Article

PREDEPOSITION THROUGH A POLYSILICON LAYER AS A TOOL TO REDUCE ANOMALIES IN PHOSPHORUS PROFILES AND THE PUSH-OUT EFFECT IN N-P-N TRANSISTORSFINETTI M; MASETTI G; NEGRINI P et al.1980; J.E.E. PROC., I; GBR; DA. 1980; VOL. 127; NO 1; PP. 37-41; BIBL. 26 REF.Article

PHOSPHORUS DIFFUSION INTO SILICON FROM CHEMICALLY VAPOUR-DEPOSITED PHOSPHOSILICATE GLASSCEROFOLINI GF; POLIGNANO ML; PICCO P et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 87; NO 4; PP. 373-378; BIBL. 9 REF.Article

Comparison of Schottky Barrier heights of CoSi₂ formed from evaporated or crystalline SiLIEN, C.-D; FINETTI, M; NICOLET, M.-A et al.Applied physics. A, Solids and surfaces. 1984, Vol 35, Num 1, pp 47-50, issn 0721-7250Article

Amorphous metallic alloys in semiconductor contact metallizationsNICOLET, M.-A; SUNI, I; FINETTI, M et al.Solid state technology. 1983, Vol 26, Num 12, pp 129-133, issn 0038-111XArticle

A further comment on «determining specific contact resistivity from contact end resistance measurements»FINETTI, M; SCORZONI, A; SONCINI, G et al.IEEE electron device letters. 1985, Vol 6, Num 4, pp 184-185, issn 0741-3106Article

Methods for contact resistance measurements: application to (n⁺, p⁺) Si/Al-1% Si ohmic contactsSCORZONI, A; FINETTI, M; SONCINI, G et al.Alta frequenza. 1984, Vol 53, Num 5, pp 282-286, issn 0002-6557Article

Titanium nitride as a diffusion barrier between nickel silicide and aluminumFINETTI, M; SUNI, I; NICOLET, M.-A et al.Journal of electronic materials. 1984, Vol 13, Num 2, pp 327-340, issn 0361-5235Article

Finite metal-sheet-resistance in contact resistivity measurements: application to Si/TiN contactsFINETTI, M; SUNI, I; NICOLET, M.-A et al.Solid-state electronics. 1983, Vol 26, Num 11, pp 1065-1067, issn 0038-1101Article

Current crowding and misalignment effects as sources of error in contact resistivity measurements. I: Computer simulation of conventional CER and CKR structuresSCORZIONI, A; FINETTI, M; GRAHN, K et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 3, pp 525-531, issn 0018-9383Article

Stable metallization systems for solar cells = Systèmes stables de métallisation pour cellules solaires = Stabile Metallisierungssysteme fuer SolarzellenMAEENPAEAE, M; SUNI, I; SIGURD, D et al.Physica status solidi. A. Applied research. 1982, Vol 72, Num 2, pp 763-769, issn 0031-8965Article

Saccharification of native and degraded cotton cellulose and commercial microcrystalline cellulose by Trichoderma viride cellobiohydrolase IFINETTI, M; DAZ, M; ELLENRIEDER, G et al.World journal of microbiology & biotechnology. 1993, Vol 9, Num 2, pp 251-254, issn 0959-3993Article

Contact resistivity of silicon/silicide structures formed by thin film reactionsFINETTI, M; GUERRI, S; NEGRINI, P et al.Thin solid films. 1985, Vol 130, Num 1-2, pp 37-45, issn 0040-6090Article

Current crowding and misalignment effects as sources of error in contact resistivity measurements. II: Experimental results and computer simulation of self-aligned test structuresCAPPELLETTI, P; FINETTI, M; SCORZIONI, A et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 3, pp 532-536, issn 0018-9383Article