INVESTIGATION OF THE AU-GE-NI AND AU-GE-PT SYSTEM USED FOR ALLOYED CONTACTS TO GAAS.WITTMER M; FINSTAD T; NICOLET MA et al.1977; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1977; VOL. 14; NO 4; PP. 935-936; BIBL. 3 REF.Article

A DIFFUSION MARKER IN AU/SN THIN FILMS = MARQUEUR DE DIFFUSION DANS DES COUCHES MINCES AU/SNGREGERSEN D; BUENE L; FINSTAD T et al.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 78; NO 1; PP. 95-102; BIBL. 15 REF.Article

Sequential resonant and nonresonant tunneling in GaAs/AlGaAs multiple quantum wellsHELGESEN, P; FINSTAD, T. G; JOHANNESSEN, K et al.Journal of applied physics. 1991, Vol 69, Num 4, pp 2689-2691, issn 0021-8979, 3 p.Article

Respective mobilities of metal and silicon in disilicides: bilayers of chromium with molybdenum or tungstenTHOMAS, O; FINSTAD, T. G; D'HEURLE, F. M et al.Journal of applied physics. 1990, Vol 67, Num 5, pp 2410-2414, issn 0021-8979, 5 p.Article

Bi-stable pore size during electrochemical etching of n-type silicon during a thermal rampKAN, P. Y. Y; FINSTAD, T. G.Thin solid films. 2007, Vol 515, Num 13, pp 5241-5247, issn 0040-6090, 7 p.Article

One-step etch-through porous silicon membrane with an open cavity and pore size tuningKAN, P. Y. Y; FINSTAD, T. G.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 15, pp 3743-3747, issn 1862-6300, 5 p.Article

Laser reflectance interferometry for in situ determination of silicon etch rate in various solutionsSTEINSLAND, E; FINSTAD, T; HANNEBORG, A et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 10, pp 3890-3895, issn 0013-4651Article

Kinetics and mechanism of oxide formation on titanium, vanadium and chromium thin films = Cinétique et mécanisme de formation des oxydes sur les couches minces de chrome, vanadium et titaneSALOMONSEN, G; NORMAN, N; LOÊNSJOÊ, O et al.Journal of the less-common metals. 1990, Vol 158, Num 2, pp 251-265, issn 0022-5088Article

Electrical and metallurgical investigations of the metallization system: Si/PtSi/V/AlSALOMONSEN, G; OLSEN, A; LØNSJØ, O et al.Journal of applied physics. 1986, Vol 60, Num 5, pp 1753-1757, issn 0021-8979Article

Phase formation and diffusion in V/Al thin film couples prepared under varying deposition conditions = Formation de phases et diffusion dans des couples de couches minces V/Al préparées sous différentes conditions de dépôtFINSTAD, T. G; SALOMENSEN, G; NORMAN, N et al.Thin solid films. 1984, Vol 114, Num 3, pp 271-284, issn 0040-6090Article

Kinetics and mechanism of oxide formation on Cr thin films = Cinétique et mécanisme de formation d'un oxyde sur des couches minces de CrSALOMONSEN, G; NORMAN, N; LØNSJØ, O et al.Journal of physics. Condensed matter (Print). 1989, Vol 1, Num 42, pp 7843-7850, issn 0953-8984Article

Charge-storage effects in a metal-insulator-semi-conductor structure containing germanium nano-crystals formed by rapid thermal annealing of an electron-beam evaporated germanium layerHENG, C. L; TJIU, W. W; FINSTAD, T. G et al.Applied physics. A, Materials science & processing (Print). 2004, Vol 78, Num 8, pp 1181-1186, issn 0947-8396, 6 p.Article

Structural and electrical properties of B- and Ge-implanted SiTURAN, R; HUGSTED, B; LØNSJØ, O. M et al.Journal of applied physics. 1989, Vol 66, Num 3, pp 1155-1158, issn 0021-8979Article

Interdiffusion and phase formation in Au/Sn thin film couples with special emphasis on substrate temperature during condensation = Interdiffusion et formation de phases dans les couples de couches minces Au/Sn en insistant spécialement sur la température du support pendant la condensationHUGSTED, B; BUENE, L; FINSTAD, T et al.Thin solid films. 1982, Vol 98, Num 2, pp 81-94, issn 0040-6090Article

Comparison of the diffusion barrier properties of tungsten films prepared by hydrogen and silicon reduction of tungsten hexafluoride = Comparaison des propriétés de barrière de diffusion de couches de tungstène préparés par réduction par l'hydrogène et le silicium d'hexafluorure de tungstèneTHOMAS, O; CHARAI, A; D'HEURLE, M et al.Thin solid films. 1989, Vol 171, Num 2, pp 343-357, issn 0040-6090Article

Annealing effect of SnO₂ films prepared by chemical vapor deposition: evidence of chlorine removal by Auger electron spectroscopy and Rutherford backscattering spectrometry studiesKIM, K; FINSTAD, T. G; CHU, W. K et al.Solar cells. 1985, Vol 13, Num 3, pp 301-307, issn 0379-6787Article

Lattice-matched Sc_1-xEr_xAs/GaAs heterostructures : a demonstration of new systems for fabricating lattice-matched metallic compounds to semiconductorsPALMSTRØM, C. J; MOUNIER, S; FINSTAD, T. G et al.Applied physics letters. 1990, Vol 56, Num 4, pp 382-384, issn 0003-6951Article

Reaction of silicon with films of Co―Ni alloys: phase separation of the monosilicides and nucleation of the disilicides = Réaction du silicium avec des couches d'alliages Co-Ni: séparation de phase des monosiliciures et germination des disiliciuresD'HEURLE, F. M; ANFITEATRO, D. D; DELINE, V. R et al.Thin solid films. 1985, Vol 128, Num 1-2, pp 107-124, issn 0040-6090Article

Transient enhanced diffusion during rapid thermal annealing of boron implanted siliconCHO, K; NUMAN, M; FINSTAD, T. G et al.Applied physics letters. 1985, Vol 47, Num 12, pp 1321-1323, issn 0003-6951Article

Characterization of Ge nanocrystals embedded in SiO₂ by Raman spectroscopySERINCAN, U; KARTOPU, G; GUENNES, A et al.Semiconductor science and technology. 2004, Vol 19, Num 2, pp 247-251, issn 0268-1242, 5 p.Article

Role of 99mTc-labeled disida scan in the assessment of marginal liver grafts after orthotopic transplantationKARADEMIR, S; CSETE, M. E; JURIM, O et al.Clinical transplantation. 1994, Vol 8, Num 1, pp 54-58, issn 0902-0063Article

Nanocrystal and nanocluster formation and oxidation in annealed ge-implanted SiO₂ filmsMARSTEIN, E. S; GUNNAES, A. E; SERINCAN, U et al.Surface & coatings technology. 2002, Vol 158-59, pp 544-547, issn 0257-8972Conference Paper

Ion beam synthesized luminescent Si nanocrystals embedded in SiO₂ films and the role of damage on nucleation during annealingMAYANDI, J; FINSTAD, T. G; FOSS, S et al.Surface & coatings technology. 2007, Vol 201, Num 19-20, pp 8482-8485, issn 0257-8972, 4 p.Conference Paper

MBE growth and in situ electrical characterization of metal/semiconductor structuresCHEN, L. C; CALDWELL, D. A; MÜLLER, T. A et al.Journal of crystal growth. 1999, Vol 201202, pp 146-149, issn 0022-0248Conference Paper

Structural study of GaSb/AlSb strained-layer superlatticePAN, C. K; ZHENG, D. C; FINSTAD, T. G et al.Physical review. B, Condensed matter. 1985, Vol 31, Num 3, pp 1270-1277, issn 0163-1829Article