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Effect of the electron-plasmon interaction on the electron mobility in siliconFISCHETTI, M. V.Physical review. B, Condensed matter. 1991, Vol 44, Num 11, pp 5527-5534, issn 0163-1829Article

Monte Carlo solution to the problem of high-field electron heating in SiO2FISCHETTI, M. V.Physical review letters. 1984, Vol 53, Num 18, pp 1755-1758, issn 0031-9007Article

The importance of the anode field in controlling the generation rate of the donor states at the Si-SiO2 interfaceFISCHETTI, M. V.Journal of applied physics. 1984, Vol 56, Num 2, pp 575-577, issn 0021-8979Article

Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I: Homogeneous transportFISCHETTI, M. V.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 3, pp 634-649, issn 0018-9383Article

Generation of positive charge in silicon dioxide during avalanche and tunnel electron injectionFISCHETTI, M. V.Journal of applied physics. 1985, Vol 57, Num 8, pp 2860-2879, issn 0021-8979, part 1Article

Model for the generation of positive charge at the Si-SiO2 interface based on hot-hole injection from the anodeFISCHETTI, M. V.Physical review. B, Condensed matter. 1985, Vol 31, Num 4, pp 2099-2113, issn 0163-1829Article

Ballistic hot-electron transistorsHEIBLUM, M; FISCHETTI, M. V.IBM journal of research and development. 1990, Vol 34, Num 4, pp 530-549, issn 0018-8646Article

Hot-electron-induced defects at the Si-SiO2 interface at high fields at 295 and 77 KFISCHETTI, M. V; RICCO, B.Journal of applied physics. 1985, Vol 57, Num 8, pp 2854-2859, issn 0021-8979, part 1Article

Temperature dependence of the current in SiO2 in the high field tunneling regimeRICCO, B; FISCHETTI, M. V.Journal of applied physics. 1984, Vol 55, Num 12, pp 4322-4329, issn 0021-8979Article

Monte Carlo study of electron transport in silicon inversion layersFISCHETTI, M. V; LAUX, S. E.Physical review. B, Condensed matter. 1993, Vol 48, Num 4, pp 2244-2274, issn 0163-1829Article

Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. II, Submicrometer MOSFET'sFISCHETTI, M. V; LAUX, S. E.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 3, pp 650-660, issn 0018-9383Article

Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effectsFISCHETTI, M. V; LAUX, S. E.Physical review. B, Condensed matter. 1988, Vol 38, Num 14, pp 9721-9745, issn 0163-1829Article

Quantum Monte Carlo simulation of high-field electron transport: an application to silicon dioxideFISCHETTI, M. V; DIMARIA, D. J.Physical review letters. 1985, Vol 55, Num 22, pp 2475-2478, issn 0031-9007Article

Monte-Carlo simulation of submicrometer Si n-MOSFET's at 77 and 300 KLAUX, S. E; FISCHETTI, M. V.IEEE electron device letters. 1988, Vol 9, Num 9, pp 467-469, issn 0741-3106Article

Study of performance and leakage currents in nanometer-scale bulk, SOI and double-gate MOSFETsNARAYANAN, Sudarshan; SACHS, C; FISCHETTI, M. V et al.Journal of computational electronics (Print). 2008, Vol 7, Num 1, pp 24-27, issn 1569-8025, 4 p.Article

Monte Carlo simulation of hot-carrier transport in real semiconductor devicesFISCHETTI, M. V; LAUX, S. E; LEE, W et al.Solid-state electronics. 1989, Vol 32, Num 12, pp 1723-1729, issn 0038-1101Conference Paper

Vacuum emission of hot electrons from silicon dioxide at low temperaturesDIMARIA, D. J; FISCHETTI, M. V.Journal of applied physics. 1988, Vol 64, Num 9, pp 4683-4691, issn 0021-8979Article

Investigation of the SiO2-induced substrate current in silicon field-effect transistorsWEINBERG, Z. A; FISCHETTI, M. V.Journal of applied physics. 1985, Vol 57, Num 2, pp 443-452, issn 0021-8979Article

Soft-X-ray-induced core-level photoemission as a probe of hot-electron dynamics in SiO2MCFEELY, F. R; CARTIER, E; TERMINELLO, L. J et al.Physical review letters. 1990, Vol 65, Num 15, pp 1937-1940, issn 0031-9007, 4 p.Article

Electron avalanche injection on 10-nm dielectric filmsDORI, L; ARIENZO, M; NGUYEN, T. N et al.Journal of applied physics. 1987, Vol 61, Num 5, pp 1910-1915, issn 0021-8979Article

Electron interference effects in quantum wells: observation of bound and resonant statesHEIBLUM, M; FISCHETTI, M. V; DUMKE, W. P et al.Physical review letters. 1987, Vol 58, Num 8, pp 816-819, issn 0031-9007Article

QDAME simulation of 7.5 nm double-gate Si nFETs with differing access geometriesLAUX, S. E; KUMAR, A; FISCHETTI, M. V et al.IEDm : international electron devices meeting. 2002, pp 715-718, isbn 0-7803-7462-2, 4 p.Conference Paper

Monte Carlo analysis of semiconductor devices: the DAMOCLES programLAUX, S. E; FISCHETTI, M. V; FRANK, D. J et al.IBM journal of research and development. 1990, Vol 34, Num 4, pp 466-494, issn 0018-8646Article

SiO2-induced substrate current and its relation to positive charge in field-effect transistorsWEINBERG, Z. A; FISCHETTI, M. V; NISSAN-COHEN, Y et al.Journal of applied physics. 1986, Vol 59, Num 3, pp 824-832, issn 0021-8979Article

The effect of gate metal and SiO2 thickness on the generation of donor states at the Si-SiO2 interfaceFISCHETTI, M. V; WEINBERG, Z. A; CALISE, J. A et al.Journal of applied physics. 1985, Vol 57, Num 2, pp 418-425, issn 0021-8979Article

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