Some Aspects of the Political Economy of the Latin American StateFITZGERALD E. V. K.Development and Change. 1976, Vol 7, Num 2, pp 119-134Article

Creating user-generated content for location- based learning: an authoring framework : Designing and Evaluating Social Media for LearningFITZGERALD, E.Journal of computer assisted learning (Print). 2012, Vol 28, Num 3, pp 195-207, issn 0266-4909, 13 p.Article

CANDIDA ARTHRITIS. A CASE REPORT AND REVIEW OF THE LITERATUREFITZGERALD E; LLOYD STILL J; GORDON SL et al.1975; CLIN. ORTHOP. RELAT. RES.; U.S.A.; DA. 1975; NO 106; PP. 143-147; BIBL. 17REF.Article

Determination of composition of mixed meta- and para-cresol/formaldehyde novolaks by ¹³C-NMR spectroscopyFITZGERALD, E. A.Journal of applied polymer science. 1990, Vol 41, Num 7-8, pp 1809-1814, issn 0021-8995, 6 p.Article

Epitaxial growth of highly strained si on relaxed Ge/Si(100) using ECR plasma CVD without substrate heatingSUGAWARA, Katsutoshi; SAKURABA, Masao; MUROTA, Junichi et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S42-S45Conference Paper

Ge nanocrystal metal-oxide-semiconductor transistors with Ge nanocrystals formed by thermal oxidation of poly-Si_0.88Ge_0.12WU, J. H; LI, P. W.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S89-S92Conference Paper

Compositional analysis of Si nanostructures : SIMS-3D tomographic atom probe comparisonTHOMPSON, K; BUNTON, J. H; MOORE, J. S et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S127-S131Conference Paper

High-density plane deposition kinetics and facet propagation in silicon-selective epitaxial growthLOUBET, Nicolas; TALBOT, Alexandre; DUTARTRE, Didier et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S149-S152Conference Paper

Highly tensile strained silicon-carbon alloys epitaxially grown into recessed source drain areas of NMOS devicesBAUER, Matthias; MACHKAOUTSAN, Vladimir; ARENA, Chantal et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S183-S187Conference Paper

Effective mass measurement : the influence of hole band nonparabolicity in SiGe/Ge quantum wellsRÖSSNER, Benjamin; VON KÄNE, Hans; CHRASTINA, Daniel et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S191-S194Conference Paper

Growth and structure evaluation of strain-relaxed Ge_1-xSn_x buffer layers grown on various types of substratesTAKEUCHI, Shotaro; SAKAI, Akira; YAMAMOTO, Koji et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S231-S235Conference Paper

Selective epitaxial Si/SiGe growth for V_T shift adjustment in high k pMOS devicesLOO, R; SORADA, H; INOUE, A et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S110-S113Conference Paper

The high growth rate of epitaxial silicon-carbon alloys by using chemical vapour deposition and neopentasilaneCHUNG, K. H; STURM, J. C; SANCHEZ, E et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S158-S160Conference Paper

Photodistributed hypertrophic lichen planus in association with acquired immunodeficiency syndrome : a distinct entityFITZGERALD, E; PURCELL, S. M; GOLDMAN, H. M et al.Cutis (New York, NY). 1995, Vol 55, Num 2, pp 109-111, issn 0011-4162Article

Osteomesopyknosis: benign axial osteosclerosisGRIFFITH, T. M; FITZGERALD, E; COCHLIN, D. L et al.British journal of radiology. 1988, Vol 61, Num 730, pp 951-953, issn 0007-1285Article

An assessment of burn care professionals' attitudes to major burnMURPHY, A. D; HEALY, C; PURCELL, E et al.Burns. 2008, Vol 34, Num 4, pp 512-515, issn 0305-4179, 4 p.Article

Interdiffusion in strained Si/strained SiGe epitaxial heterostructuresGUANGRUI XIA; CANONICO, Michael; HOYT, Judy L et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S55-S58Conference Paper

Determination of the surface segregation ratio of P in Si(100) during solid-source molecular beam epitaxial growthTHOMPSON, Phillip E; JERNIGAN, Glenn G.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S80-S83Conference Paper

Low-temperature pre-treatments in a vertical epitaxial reactor with an improved vacuum load-lock chamberJIE WANG; INOKUCHI, Yasuhiro; KUNII, Yasuo et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S107-S109Conference Paper

Epitaxial growth of P atomic layer doped Si film by alternate surface reactions of PH₃ and Si₂H₆ on strained Si_1-xGe_x/Si(100) in ultraclean low-pressure CVDCHIBA, Yohei; SAKURABA, Masao; MUROTA, Junichi et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S118-S122Conference Paper

Ge deep sub-micron HiK/MG pFETs with superior drive compared to si HiK/MG state-of-the-art referenceDE JAEGER, B; KACZER, B; ARENA, C et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S221-S226Conference Paper

Silicon germanium based millimetre-wave ICs for Gbps wireless communications and radar systemsGAUCHER, B; FLOYD, B; WALTER, K et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S236-S243Conference Paper

Thermoelectric power generation using large-area Si/SiGe pn-junctions with varying Ge contentWAGNER, M; SPAN, G; HOLZER, S et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S173-S176Conference Paper

Thin germanium-carbon layers deposited directly on silicon for metal-oxide-semiconductor devicesKELLY, D. Q; WIEDMANN, I; GARCIA-GUTIERREZ, D. I et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S204-S207Conference Paper

The Solar House programme : Innovative European designLEWIS, J. O; FITZGERALD, E.International conference on solar energy at high latitudes. 1997, pp 5-11, isbn 951-22-3567-6, 2VolConference Paper