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EFFECT OF IONISING RADIATION ON MOBILE-ION DENSITY IN M.O.S. OXIDESBHAR TN; DAT R; KOYAMA RU et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 1; PP. 16-17; BIBL. 8 REF.Article

RAPID DETERMINATION OF SEMICONDUCTOR DOPING AND FLATBAND VOLTAGE IN LARGE MOSFET'S.LUBBERTS G.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 12; PP. 5355-5356; BIBL. 6 REF.Article

DISCHARGE OF M.N.O.S. STRUCTURESPOPOVA LI; VITANOV PK; ANTOV BZ et al.1979; I.E.E.J. SOLID STATE ELECTRON DEVICES; GBR; DA. 1979; VOL. 3; NO 1; PP. 17-20; BIBL. 19 REF.Article

THE TIME DEPENDENCE OF THE FLATBAND VOLTAGE SHIFT OF MOS CAPACITORS CAUSED BY THE INJECTION OF MINORITY CARRIERS FROM SI INTO SIO2JOSEPH B.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 51; NO 1; PP. K9-K11; BIBL. 10 REF.Article

COMPUTER ANALYSIS OF A SHORT-CHANNEL BC MOSFETOKA H; NISHIUCHI K; NAKAMURA T et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 579-585; BIBL. 18 REF.Article

DISTRIBUTION OF FLAT-BAND VOLTAGES IN LATERALLY NONUNIFORM MIS CAPACITORS AND APPLICATION TO A TEST FOR NONUNIFORMITIESCHANG CC; JOHNSON WC.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 12; PP. 1368-1373; BIBL. 13 REF.Article

MEMORY HYSTERESIS MEASUREMENTS ON SILICON OXYNITRIDE FILMSHORVATH ZJ.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 10; PP. 1053-1054; BIBL. 2 REF.Article

A MODIFIED EXPRESSION OF THE FLAT-BAND VOLTAGE DUE TO THE FIXED SURFACE CHARGE DENSITY OF A MOS CONFIGURATION1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 2; PP. 1163-1164Article

TEMPERATURE BEHAVIOUR OF MNOS STRUCTURES.POPOVA LI; VITANOV PK; ANTOV BZ et al.1977; PHYS. LETTERS, A; NETHERL.; DA. 1977; VOL. 59; NO 6; PP. 481-482; BIBL. 12 REF.Article

EFFECT OF DISTRIBUTED CHARGE IN THE NITRIDE OF AN MNOS STRUCTURE ON THE FLAT-BAND VOLTAGE.CHANG JJ.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 11; PP. 742-743; BIBL. 12 REF.Article

Strain-dependent defect formation kinetics and a correlation between flatband voltage and nitrogen distribution in thermally nitrided SiOxNy/Si structuresVASQUEZ, R. P; MADHUKAR, A.Applied physics letters. 1985, Vol 47, Num 9, pp 998-1000, issn 0003-6951Article

Pulse technique for flat-band voltage measurements in MIS structuresBAGINSKI, I. L; KOSTSOV, E. G; MEERSON, E. E et al.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp K99-K102, issn 0031-8965Article

Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertionKAKUSHIMA, K; OKAMOTO, K; ADACHI, M et al.Solid-state electronics. 2008, Vol 52, Num 9, pp 1280-1284, issn 0038-1101, 5 p.Conference Paper

A new method for the extraction of flat-band voltage and doping concentration in Tri-gate Junctionless TransistorsJEON, D.-Y; PARK, S. J; MOUIS, M et al.Solid-state electronics. 2013, Vol 81, pp 113-118, issn 0038-1101, 6 p.Article

Flatband potential determination and surface modifications at semiconductor-liquid jonctionsALLONGUE, P; CACHET, H.Solid state communications. 1985, Vol 55, Num 1, pp 49-53, issn 0038-1098Article

On the flat-band voltage of MOS structures on nonuniformly doped substratesVAN DE WIELE, F.Solid-state electronics. 1984, Vol 27, Num 8-9, pp 824-826, issn 0038-1101Article

Ethanol sensitivity of palladium-gate metal-oxide-semiconductor structuresACKELID, U; ARMGARTH, M; SPETZ, A et al.IEEE electron device letters. 1986, Vol 7, Num 6, pp 353-355, issn 0741-3106Article

Shifts in the flatband voltage of metal-oxide-silicon structure due to iodine in SiO2KRUSIN-ELBAUM, L; SAI-HALASZ, G. A.Applied physics letters. 1986, Vol 48, Num 2, pp 177-179, issn 0003-6951Article

Capacité d'interface et potentiel de bandes plates de CdIn2Se4 et CdCr2Se4 = Interface capacity and flat-band potential of CdIn2Se4 and CdCr2Se4SAVADOGO, O; YAZBECK, J; DESCHANVRES, A et al.Annales de chimie (Paris. 1914). 1984, Vol 9, Num 2, pp 145-152, issn 0151-9107Article

Study of electrical characteristics on thermally nitrided SiO2 (nitroxide) filmsCHEN, C.-T; TSENG, F.-C; CHANG, C.-Y et al.Journal of the Electrochemical Society. 1984, Vol 131, Num 4, pp 875-877, issn 0013-4651Article

Conduction properties of silicon dioxide in oxide-nitride-oxide structuresMANZINI, S; QUEIROLO, G.Solid-state electronics. 1987, Vol 30, Num 6, pp 587-591, issn 0038-1101Article

Electrolyte-semiconductor junctions in the case of p-type II-VI alloys with common telluride anionLEMASSON, P.Solid state communications. 1983, Vol 48, Num 5, pp 411-415, issn 0038-1098Article

ZUM EINFLUSS DER SPUTTERBEDINGUNGEN BEI DER BESCHICHTUNG OXYDIERTER SI-SUBSTRATE AUF EIGENSCHAFTEN DER SI/SIO2-GRENZFLAECHE = INFLUENCE DES CONDITIONS DE PULVERISATION DANS LE CAS DU REVETEMENT DE SUBSTRATS EN SI OXYDES SUR LES CARACTERISTIQUES DE L'INTERFACE SI-SIO2STEENBECK K; SALM J; MICHALKE W et al.1979; EXPER. TECH. PHYS.; DDR; DA. 1979; VOL. 27; NO 6; PP. 543-550; ABS. ENG; BIBL. 17 REF.Article

A NEW TECHNIQUE FOR THE DETERMINATION OF THE CHARGE CENTROID IN MNOS STRUCTURESKRAFCSIK I; MARTON D.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 9; PP. 751-753; BIBL. 7 REF.Article

EFFECTS OF ELECTRON-BEAM RADIATION ON MOS STRUCTURES AS INFLUENCED BY THE SILICON DOPANT.SCOGGAN GA; MA TP.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 1; PP. 294-300; BIBL. 17 REF.Article

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