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EFFECT OF IONISING RADIATION ON MOBILE-ION DENSITY IN M.O.S. OXIDESBHAR TN; DAT R; KOYAMA RU et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 1; PP. 16-17; BIBL. 8 REF.Article

RAPID DETERMINATION OF SEMICONDUCTOR DOPING AND FLATBAND VOLTAGE IN LARGE MOSFET'S.LUBBERTS G.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 12; PP. 5355-5356; BIBL. 6 REF.Article

DISCHARGE OF M.N.O.S. STRUCTURESPOPOVA LI; VITANOV PK; ANTOV BZ et al.1979; I.E.E.J. SOLID STATE ELECTRON DEVICES; GBR; DA. 1979; VOL. 3; NO 1; PP. 17-20; BIBL. 19 REF.Article

THE TIME DEPENDENCE OF THE FLATBAND VOLTAGE SHIFT OF MOS CAPACITORS CAUSED BY THE INJECTION OF MINORITY CARRIERS FROM SI INTO SIO2JOSEPH B.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 51; NO 1; PP. K9-K11; BIBL. 10 REF.Article

DISTRIBUTION OF FLAT-BAND VOLTAGES IN LATERALLY NONUNIFORM MIS CAPACITORS AND APPLICATION TO A TEST FOR NONUNIFORMITIESCHANG CC; JOHNSON WC.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 12; PP. 1368-1373; BIBL. 13 REF.Article

Pulse technique for flat-band voltage measurements in MIS structuresBAGINSKI, I. L; KOSTSOV, E. G; MEERSON, E. E et al.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp K99-K102, issn 0031-8965Article

Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertionKAKUSHIMA, K; OKAMOTO, K; ADACHI, M et al.Solid-state electronics. 2008, Vol 52, Num 9, pp 1280-1284, issn 0038-1101, 5 p.Conference Paper

A new method for the extraction of flat-band voltage and doping concentration in Tri-gate Junctionless TransistorsJEON, D.-Y; PARK, S. J; MOUIS, M et al.Solid-state electronics. 2013, Vol 81, pp 113-118, issn 0038-1101, 6 p.Article

Ethanol sensitivity of palladium-gate metal-oxide-semiconductor structuresACKELID, U; ARMGARTH, M; SPETZ, A et al.IEEE electron device letters. 1986, Vol 7, Num 6, pp 353-355, issn 0741-3106Article

Shifts in the flatband voltage of metal-oxide-silicon structure due to iodine in SiO2KRUSIN-ELBAUM, L; SAI-HALASZ, G. A.Applied physics letters. 1986, Vol 48, Num 2, pp 177-179, issn 0003-6951Article

Capacité d'interface et potentiel de bandes plates de CdIn2Se4 et CdCr2Se4 = Interface capacity and flat-band potential of CdIn2Se4 and CdCr2Se4SAVADOGO, O; YAZBECK, J; DESCHANVRES, A et al.Annales de chimie (Paris. 1914). 1984, Vol 9, Num 2, pp 145-152, issn 0151-9107Article

Study of electrical characteristics on thermally nitrided SiO2 (nitroxide) filmsCHEN, C.-T; TSENG, F.-C; CHANG, C.-Y et al.Journal of the Electrochemical Society. 1984, Vol 131, Num 4, pp 875-877, issn 0013-4651Article

Conduction properties of silicon dioxide in oxide-nitride-oxide structuresMANZINI, S; QUEIROLO, G.Solid-state electronics. 1987, Vol 30, Num 6, pp 587-591, issn 0038-1101Article

Electrolyte-semiconductor junctions in the case of p-type II-VI alloys with common telluride anionLEMASSON, P.Solid state communications. 1983, Vol 48, Num 5, pp 411-415, issn 0038-1098Article

FLATBAND PROPERTIES OF PHOTOELECTROCHEMICAL CELLS FOR SOLAR ENERGY CONVERSIONGINLEY DS; BUTLER MA.sdINTERNATIONAL CONFERENCE ON THE PHOTOCHEMICAL CONVERSION AND STORAGE OF SOLAR ENERGY. 2/1978-08-10/CAMBRIDGE; GBR; DA. S.D.; PP. 72-74; BIBL. 8 REF.Conference Paper

Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistorsJEON, Dae-Young; SO JEONG PARK; MOUIS, Mireille et al.Solid-state electronics. 2013, Vol 81, pp 101-104, issn 0038-1101, 4 p.Article

Method for Extracting Doping Concentration and Flat-Band Voltage in Junctionless Multigate MOSFETs Using 2-D Electrostatic EffectsRUDENKO, Tamara; RAN YU; BARRAUD, Sylvain et al.IEEE electron device letters. 2013, Vol 34, Num 8, pp 957-959, issn 0741-3106, 3 p.Article

Sensing behavior and mechanism of titanium dioxide-based MOS hydrogen sensorYADAV, Lallan; NAVEEN CHANDRA GUPTA; DWIVEDI, R et al.Microelectronics journal. 2007, Vol 38, Num 12, pp 1226-1232, issn 0959-8324, 7 p.Article

Low-temperature electrical characterization of junctionless transistorsJEON, Dae-Young; SO JEONG PARK; MOUIS, Mireille et al.Solid-state electronics. 2013, Vol 80, pp 135-141, issn 0038-1101, 7 p.Article

Dependence of the flatband voltage of Si-MOS on distribution of cesium in SiO2: comparison of two implantation methodsKRUSIN-ELBAUM, L.Journal of the Electrochemical Society. 1986, Vol 133, Num 8, pp 1712-1715, issn 0013-4651Article

Characteristics of WN/GaAs Schottky contacts formed by reactive RF sputteringYAMAGISHI, H.Japanese journal of applied physics. 1984, Vol 23, Num 12, pp 895-898, issn 0021-4922Article

Photoelectrochemical processes in bismuth germanium oxide, Bi12GeO20 single crystalsKOCHEV, K; TZVETKOVA, K; GOSPODINOV, M et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 2, pp 330-332, issn 0013-4651Article

Mise au point. Principes de base de l'électrochimie des semiconducteurs = Basic principles of semiconductor electrochemistry (Review)GUYOMARD, D.Journal de chimie physique. 1986, Vol 83, Num 6, pp 355-391, issn 0021-7689Article

Determination of the Si-conducting polymer interfacial properties using A-C impedance techniquesNAGASUBRAMANIAN, G; DI STEFANO, S; MOACANIN, J et al.Journal of electronic materials. 1986, Vol 15, Num 1, pp 21-25, issn 0361-5235Article

Electrical properties of amorphous tantalum pentoxide thin films on siliconOEHRLEIN, G. S; REISMAN, A.Journal of applied physics. 1983, Vol 54, Num 11, pp 6502-6508, issn 0021-8979Article

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