au.\*:("FORCHEL, A")
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STRESS DEPENDENCE OF ELECTRON-HOLE LIQUID PARAMETERS IN SILICONWAGNER J; FORCHEL A; SAUER R et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 11; PP. 991-994; BIBL. 12 REF.Article
ON THE CORRELATION OF "HOT" AND "COLD" ELECTRON-HOLE DROP DENSITIES IN UNIAXIALLY STRESSED SILICONWAGNER J; FORCHEL A; SAUER R et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 36; NO 11; PP. 917-921; BIBL. 13 REF.Article
THERMODYNAMICAL PROPERTIES OF THE ELECTRON-HOLE SYSTEM OUTSIDE THE REGION OF DROPLET FORMATION IN GERMANIUMSCHWEIZER H; FORCHEL A; KLINGENSTEIN W et al.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 102; NO 1; PP. 343-350; ABS. GER; BIBL. 18 REF.Article
SYSTEMATICS OF ELECTRON-HOLE LIQUID CONDENSATION FROM STUDIES OF SILICON WITH VARYING UNIAXIAL STRESSFORCHEL A; LAURICH B; WAGNER J et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 4; PP. 2730-2747; BIBL. 68 REF.Article
Quantum dot micropillarsREITZENSTEIN, S; FORCHEL, A.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 3, issn 0022-3727, 033001.1-033001.25Article
STRESS DEPENDENT KINETICS OF ELECTRON-HOLE DROPS IN UNIAXIALLY DEFORMED SILICONWAGNER J; FORCHEL A; SCHMID W et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 42; NO 4; PP. 275-279; BIBL. 20 REF.Article
Enhancement of electron-pair mobilities in thin GaAs/AlxGa1-xAs quantum wellsHILLMER, H; FORCHEL, A; TU, C. W et al.Physical review. B, Condensed matter. 1992, Vol 45, Num 3, pp 1240-1245, issn 0163-1829Article
Y-branch switch frequency bisectionHARTMANN, D; WORSCHECH, L; KOWALZIK, P et al.Electronics Letters. 2006, Vol 42, Num 17, pp 1005-1006, issn 0013-5194, 2 p.Article
1.3 μm double quantum well GaInNAs distributed feedback laser diode with 13.8 GHz small signal modulation bandwidthGOLLUB, D; MOSES, S; FORCHEL, A et al.Electronics Letters. 2004, Vol 40, Num 19, pp 1181-1182, issn 0013-5194, 2 p.Article
Spin-splitting renormalization in the neutral dense magnetoplasma in InxGa1-xAs/InP quantum wellsBUTOV, L. V; KULAKOVSKII, V. D; FORCHEL, A et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 24, pp 17933-17937, issn 0163-1829Article
Metalorganic vapor phase epitaxial growth, characterization and annealing experiments on InP doping superlatticesMOLASSIOTI, A; SCHOLZ, F; FORCHEL, A et al.Journal of electronic materials. 1990, Vol 19, Num 8, pp 851-856, issn 0361-5235Article
Fabrication and optical characterisation of first order DFB GaInP/AlGaInP laser structures at 639 nmKORN, M; KÖRFER, T; FORCHEL, A et al.Electronics Letters. 1990, Vol 26, Num 9, pp 614-615, issn 0013-5194Article
Static memory element based on electron Y-branch switchHARTMANN, D; REITZENSTEIN, S; WORSCHECH, L et al.Electronics Letters. 2005, Vol 41, Num 6, pp 303-304, issn 0013-5194, 2 p.Article
Optical properties of GaInNAs/GaAs quantum wells: character of optical transitions and carrier localisation effectKUDRAWIEC, R; MISIEWICZ, J; FISHER, M et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 2, pp 364-367, issn 0031-8965, 4 p.Conference Paper
Lateral quantization effects in the optical properties of barrier modulated InGaAs/GaAs wiresGREUS, C; SPIEGEL, R; FALLER, F et al.Journal de physique. IV. 1993, Vol 3, Num 5, pp 139-142, issn 1155-4339Conference Paper
Optical study of Ar+ implantation-induced damage in GaAs/GaAlAs heterostructuresKIESLICH, A; STRAKA, J; FORCHEL, A et al.Journal of applied physics. 1992, Vol 72, Num 12, pp 6014-6016, issn 0021-8979Article
Optical properties of fast-diffusing solid-state plasmasFORCHEL, A; SCHWEIZER, H; MAHLER, G et al.Physical review letters. 1983, Vol 51, Num 6, pp 501-504, issn 0031-9007Article
Room temperature memory operation of electron Y-branch switch with embedded quantum dotsMÜLLER, C. R; WORSCHECH, L; FORCHEL, A et al.Electronics Letters. 2007, Vol 43, Num 24, pp 1392-1393, issn 0013-5194, 2 p.Article
Self-gating controlled pronounced threshold hysteresis in electron Y-branch switch with quantum dotsMÜLLER, C. R; WORSCHECH, L; FORCHEL, A et al.Electronics Letters. 2006, Vol 42, Num 10, pp 603-604, issn 0013-5194, 2 p.Article
Inverted and non-inverted hysteretic switching in GaAs/AlGaAs-based electron Y-branch switchesHARTMANN, D; WORSCHECH, L; LANG, S et al.Electronics Letters. 2005, Vol 41, Num 19, pp 1083-1084, issn 0013-5194, 2 p.Article
Nonlinear properties of ballistic nanoelectronic devicesWORSCHECH, L; HARTMANN, D; REITZENSTEIN, S et al.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 29, pp R775-R802, issn 0953-8984Article
1D-0D-1D transitions in GaAs/AlGaAs electron waveguides coupled by a semiconducting islandWORSCHECH, L; REITZENSTEIN, S; FORCHEL, A et al.Physica status solidi. B. Basic research. 2001, Vol 224, Num 3, pp 863-865, issn 0370-1972Conference Paper
An optical study of the lateral motion of two-dimensional electron-hole pairs in GaAs/AlGaAs quantum wellsHILLMER, H; FORCHEL, A; TU, C. W et al.Journal of physics. Condensed matter (Print). 1993, Vol 5, Num 31, pp 5563-5580, issn 0953-8984Article
Implantaton induced order-disorder transition in Ga0.52In0.48P/(Al0.35Ga0.65)0.5In0.5P heterostructuresHÄMISCH, Y; STEFFEN, R; RÖNTGEN, P et al.Japanese journal of applied physics. 1993, Vol 32, Num 10B, pp L1492-L1495, issn 0021-4922, 2Article
Excitonic transitions in GaInAs/GaAs surface quantum wellsDREYBRODT, J; FORCHEL, A; REITHMAIER, J. P et al.Journal de physique. IV. 1993, Vol 3, Num 5, pp 265-268, issn 1155-4339Conference Paper
