Study of the interaction between heavy ions and integrated circuits using a pulsed laser beamLEWIS, D; FOUILLAT, P; POUGET, V et al.EPJ. Applied physics (Print). 2002, Vol 20, Num 2, pp 151-158, issn 1286-0042, 8 p.Article

Effect of physical defect on shmoos in CMOS DSM technologiesMACHOUATA, A; HALLER, G; GOUBIER, V et al.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1333-1338, issn 0026-2714, 6 p.Conference Paper

Thermal laser stimulation effects on NMOS transistorFIRITI, A; HALLER, G; LEWIS, D et al.International Symposium on the Physical & Failure Analysis of Integrated Circuits. 2004, pp 107-110, isbn 0-7803-8454-7, 1Vol, 4 p.Conference Paper

ESD defect localization and analysis using pulsed OBIC techniquesBEAUCHENE, T; LEWIS, D; TREMOUILLES, D et al.Proceedings - Electrochemical Society. 2003, pp 156-165, issn 0161-6374, isbn 1-56677-389-X, 10 p.Conference Paper

ASICs failure analysis using two complementary techniques : external electrical testing and internal contactless laser beam testingBOUVET, C; FOUILLAT, P; DOM, J. P et al.Quality and reliability engineering international. 1992, Vol 8, Num 3, pp 213-217, issn 0748-8017Article

Time resolved imaging using synchronous picosecond Photoelectric Laser StimulationDOUIN, A; POUGET, V; DE MATOS, M et al.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1514-1519, issn 0026-2714, 6 p.Conference Paper

Investigation of SEU sensitivity of Xilinx Virtex II FPGA by pulsed laser fault injectionsDESPLATS, R; PETIT, S; REZGUI, S et al.Microelectronics and reliability. 2004, Vol 44, Num 9-11, pp 1709-1714, issn 0026-2714, 6 p.Conference Paper

Modélisation des effets des radiations sur les transistors bipolaires : Composants électroniques soumis à ridiations = Modelling the effects of radiation on bipolar transistorsMONTAGNER, X; FOUILLAT, P; TOUBOUL, A et al.REE. Revue de l'électricité et de l'électronique. 1997, Num 4, pp 67-70, issn 1265-6534Article