Selected Papers from the ESSDERC 2012 ConferenceZIMMER, Thomas; FREGONESE, Sebastien.Solid-state electronics. 2013, Vol 84, issn 0038-1101, 216 p.Conference Proceedings

Implementation of Electron―Phonon Scattering in a CNTFET Compact ModelFREGONESE, Sébastien; GOGUET, Johnny; MANEUX, Cristell et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 6, pp 1184-1190, issn 0018-9383, 7 p.Article

Technological dispersion in CNTFET: Impact of the presence of metallic carbon nanotubes in logic circuitsFREGONESE, Sébastien; MANEUX, Cristell; ZIMMER, Thomas et al.Solid-state electronics. 2009, Vol 53, Num 10, pp 1103-1106, issn 0038-1101, 4 p.Article

A versatile compact model for ballistic 1 D transistor: GNRFET and CNTFET comparisonFREGONESE, Sébastien; MANEUX, Cristell; ZIMMER, Thomas et al.Solid-state electronics. 2010, Vol 54, Num 11, pp 1332-1338, issn 0038-1101, 7 p.Article

Implementation of Tunneling Phenomena in a CNTFET Compact ModelFREGONESE, Sébastien; MANEUX, Cristell; ZIMMER, Thomas et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 10, pp 2224-2231, issn 0018-9383, 8 p.Article

Modeling of strained CMOS on disposable SiGe dots : Strain impacts on devices' electrical characteristics : Simulation and modeling of nanoelectronics devicesFREGONESE, Sébastien; YAN ZHUANG; BURGHARTZ, Joachim N et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 9, pp 2321-2326, issn 0018-9383, 6 p.Article

80 ns/45 GHz Pulsed measurement system for DC and RF characterization of high speed microwave devicesWEISS, Mario; FREGONESE, Sébastien; SANTORELLI, Marco et al.Solid-state electronics. 2013, Vol 84, pp 74-82, issn 0038-1101, 9 p.Conference Paper

Thermal Impedance Modeling of Si―Ge HBTs From Low-Frequency Small-Signal MeasurementsKUMAR SAHOO, Amit; FREGONESE, Sébastien; ZIMMER, Thomas et al.IEEE electron device letters. 2011, Vol 32, Num 2, pp 119-121, issn 0741-3106, 3 p.Article

TCAD modeling of NPN-SI-BJT electrical performance improvement through SiGe extrinsic stress layerAL-SA'DI, Mahmoud; FREGONESE, Sebastien; MANEUX, Cristell et al.Materials science in semiconductor processing. 2010, Vol 13, Num 5-6, pp 344-348, issn 1369-8001, 5 p.Article

Schottky Barrier Carbon Nanotube Transistor: Compact Modeling, Scaling Study, and Circuit Design ApplicationsNAJARI, Montassar; FREGONESE, Sébastien; MANEUX, Cristell et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 1, pp 195-205, issn 0018-9383, 11 p.Article

Quasi-double gate regime to boost UTBB SOI MOSFET performance in analog and sleep transistor applicationsKILCHYTSKA, V; BOL, D; DE VOS, J et al.Solid-state electronics. 2013, Vol 84, pp 28-37, issn 0038-1101, 10 p.Conference Paper

Characterization of self-heating in Si―Ge HBTs with pulse, DC and AC measurementsKUMAR SAHOO, Amit; FREGONESE, Sebastien; WEISS, Mario et al.Solid-state electronics. 2012, Vol 76, pp 13-18, issn 0038-1101, 6 p.Article

Implication logic gates using spin-transfer-torque-operated magnetic tunnel junctions for intrinsic logic-in-memoryMAHMOUDI, Hiwa; WINDBACHER, Thomas; SVERDLOV, Viktor et al.Solid-state electronics. 2013, Vol 84, pp 191-197, issn 0038-1101, 7 p.Conference Paper

Scale changes in electronics: Implications for nanostructure devices for logic and memory and beyondKIM, Jaeyoon; LEE, Sanghyeon; RUBIN, J et al.Solid-state electronics. 2013, Vol 84, pp 2-12, issn 0038-1101, 11 p.Conference Paper

Designing digital circuits with nano-scale devices: Challenges and opportunitiesBELLEVILLE, Marc; THOMAS, Olivier; VALENTIAN, Alexandre et al.Solid-state electronics. 2013, Vol 84, pp 38-45, issn 0038-1101, 8 p.Conference Paper

Hot-electron conduction in ovonic materialsJACOBONI, Carlo; PICCININI, Enrico; BUSCEMI, Fabrizio et al.Solid-state electronics. 2013, Vol 84, pp 90-95, issn 0038-1101, 6 p.Conference Paper

Drain-conductance optimization in nanowire TFETs by means of a physics-based analytical modelGNANI, E; GNUDI, A; REGGIANI, S et al.Solid-state electronics. 2013, Vol 84, pp 96-102, issn 0038-1101, 7 p.Conference Paper

Progress in Z²-FET 1T-DRAM: Retention time, writing modes, selective array operation, and dual bit storageJING WAN; LE ROYER, Cyrille; ZASLAVSKY, Alexander et al.Solid-state electronics. 2013, Vol 84, pp 147-154, issn 0038-1101, 8 p.Conference Paper

Two-step annealing effects on ultrathin EOT higher-k (k = 40) ALD-HfO₂ gate stacksMORITA, Yukinori; MIGITA, Shinji; MIZUBAYASHI, Wataru et al.Solid-state electronics. 2013, Vol 84, pp 58-64, issn 0038-1101, 7 p.Conference Paper

Challenges and potential of new approaches for reliability assessment of nanotechnologiesBECHOU, Laurent; DANTO, Yves; DELETAGE, Jean-Yves et al.Comptes rendus. Physique. 2008, Vol 9, Num 1, pp 95-109, issn 1631-0705, 15 p.Conference Paper

Computationally Efficient Physics-Based Compact CNTFET Model for Circuit DesignFREGONESE, Sébastien; CAZIN D'HONINCTHUN, Hugues; GOGUET, Johnny et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 6, pp 1317-1327, issn 0018-9383, 11 p.Article

Electrical Behavior and Technology Optimization of Si/SiGeC HBTs on Thin-Film SOIAVENIER, Grégory; FREGONESE, Sébastien; CHEVALIER, Pascal et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 2, pp 585-593, issn 0018-9383, 9 p.Article

A computationally efficient physics-based compact bipolar transistor model for circuit design-Part II: Parameter extraction and experimental resultsFREGONESE, Sébastien; LEHMANN, Steffen; ZIMMER, Thomas et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 2, pp 287-295, issn 0018-9383, 9 p.Article

RTS noise characterization of HfO_x RRAM in high resistive statePUGLISI, Francesco M; PAVAN, Paolo; PADOVANI, Andrea et al.Solid-state electronics. 2013, Vol 84, pp 160-166, issn 0038-1101, 7 p.Conference Paper

Si tunneling transistors with high on-currents and slopes of 50 mV/dec using segregation doped NiSi₂ tunnel junctionsKNOLL, L; SCHMIDT, M; ZHAO, Q. T et al.Solid-state electronics. 2013, Vol 84, pp 211-215, issn 0038-1101, 5 p.Conference Paper