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UNE TOMBA GALLO-LIGURE NEL TERRITORIO DELLA SPEZIA UNE TOMBE GALLO-LIGURE SUR LE TERRITOIRE DE SFROVA A.1972, pp 289-304Book

OPTOELECTRONIC DEVICES.FROVA A.1977; IN: INTERACTION. RADIAT. CONDENS. MATTER. INT. WINTER COLL.; TRIESTE; 1976; VIENNA; INT. AT. ENERGY AGENCY; DA. 1977; VOL. 2; PP. 327-373; BIBL. 4 REF.Conference Paper

La pianificazione e gli enti di tutela del patrimonio archeologico in ItaliaFROVA, A.Archeologia Medievale Firenze. 1979, Vol 6, pp 47-51Article

DISTORTION-ENHANCED OPTICAL ABSORPTION IN SRTIO3 AT THE CUBIC-TO-TETRAGONAL TRANSITIONCAPIZZI M; FROVA A.1972; PHYS. REV. LETTERS; U.S.A.; DA. 1972; VOL. 29; NO 26; PP. 1741-1744; BIBL. 19 REF.Serial Issue

ELECTRIC-FIELD-INDUCED INTERFERENCE EFFECTS AT THE GROUND EXCITATION LEVEL IN GAASEVANGELISTI F; FROVA A; FISCHBACH JU et al.1972; PHYS. REV. LETTERS; U.S.A.; DA. 1972; VOL. 29; NO 15; PP. 1001-1004; BIBL. 13 REF.Serial Issue

EXCITATION-INDUCED ABSORPTION AND LUMINESCENCE AT THE GASE EXCITON.STAEHLI JL; FROVA A; SCHMID P et al.1978; SOLID STATE COMMUNIC.; G.B.; DA. 1978; VOL. 26; NO 3; PP. 203-207; BIBL. 25 REF.Article

THE EFFECT OF SURFACE CHARGE ON EXCITON REFLECTANCE SPECTRA OF SEMICONDUCTORS AT 2OK.FROVA A; EVANGELISTI F; ZANINI M et al.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 24; NO 1; PP. 315-324; ABS. RUSSE; BIBL. 16 REF.Article

NATURE OF THE DEAD LAYER IN CDS AND ITS EFFECT ON EXCITON REFLECTANCE SPECTRA.EVANGELISTI F; FROVA A; PATELLA F et al.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 10; PP. 4253-4261; BIBL. 28 REF.Article

ELECTRON-HOLE PLASMA EXPANSION IN DIRECT-GAP GAAS1-XPXMODESTI S; FROVA A; STEHLI JL et al.1981; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1981; VOL. 108; NO 1; PP. 281-288; ABS. FRE; BIBL. 27 REF.Article

GAMMA -X MIXING OF THE FREE AND BOUND EXCITON IN GAAS1-XPXCAPIZZI M; MODESTI S; MARTELLI F et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 39; NO 2; PP. 333-335; BIBL. 24 REF.Article

Influence of spatially dependent perturbations on modulated reflectance and absorption of solidsASPNES, D. E; FROVA, A.Solid state communications. 1993, Vol 88, Num 11-12, pp 1061-1065, issn 0038-1098Article

THE ELECTRON-HOLE SYSTEM IN GASE AT HIGH DENSITIES.FROVA A; SCHMID P; GRISEL A et al.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 23; NO 1; PP. 45-48; BIBL. 25 REF.Article

MASS-REVERSAL EFFECT IN THE SPLIT INDIRECT EXCITON OF GE.FROVA A; THOMAS GA; MILLER RE et al.1975; PHYS. REV. LETTERS; U.S.A.; DA. 1975; VOL. 34; NO 25; PP. 1572-1575; BIBL. 14 REF.Article

UNIAXIALLY STRESSED SILICON: FINE STRUCTURE OF THE EXCITON AND DEFORMATION POTENTIALSMERLE JC; CAPIZZI M; FIORINI P et al.1978; REV. PHYS., B; USA; DA. 1978; VOL. 17; NO 12; PP. 4821-4834; BIBL. 44 REF.Article

MAGNETOLUMINESCENCE AND REFLECTANCE INVESTIGATION OF THE CDS BIEXCITON.EVANGELISTI F; CAPIZZI M; DE CRESCENZI M et al.1976; SOLID STATE COMMUNIC.; U.S.A.; DA. 1976; VOL. 18; NO 7; PP. 795-798; BIBL. 17 REF.Article

Defect passivation by hydrogen in III-V semiconductor epitaxial filmsFROVA, A; CAPIZZI, M.Thin solid films. 1990, Vol 193-194, Num 1-2, pp 211-219, issn 0040-6090, 9 p., . 1Conference Paper

DETERMINATION OF THE MASS-ANISOTROPY EXCITON SPLITTING IN SILICON.CAPIZZI M; MERLE JC; FIORINI P et al.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 24; NO 7; PP. 451-455; BIBL. 15 REF.Article

Self-consistent model for ambipolar tunnelling in quantum-well systemsPRESILLA, C; EMILIANI, V; FROVA, A et al.Semiconductor science and technology. 1995, Vol 10, Num 5, pp 577-585, issn 0268-1242Article

Resonant tunneling via localized states in the photocurrent yield of Pd/amorphous silicon Schottky barriersCOLUZZA, C; BENYUAN, GU; MANGIANTINI, M et al.Superlattices and microstructures. 1989, Vol 6, Num 3, pp 265-269, issn 0749-6036Article

Scattering effects on resonant tunneling in double-barrier heterostructuresGU, B; COLUZZA, C; MANGIANTINI, M et al.Journal of applied physics. 1989, Vol 65, Num 9, pp 3510-3514, issn 0021-8979Article

Urbach tail and gap states in hydrogenated a-SiC and a-SiGe alloysSKUMANICH, A; FROVA, A; AMER, N. M et al.Solid state communications. 1985, Vol 54, Num 7, pp 597-601, issn 0038-1098Article

Ambipolar tunneling in near-surface quantum wellsEMILIANI, V; FROVA, A; PRESILLA, C et al.Superlattices and microstructures. 1996, Vol 20, Num 1, pp 1-6, issn 0749-6036Article

Quenching of excitonic lines in GaAs due to deuterium accumulation at the epilayer/substrate interfaceSARTO, F; CAPIZZI, M; FROVA, A et al.Semiconductor science and technology. 1993, Vol 8, Num 7, pp 1231-1234, issn 0268-1242Article

Properties of amorphous Si:H films prepared by dual ion beam sputteringRUDOLF, P; COLUZZA, C; MARIUCCI, L et al.Physica scripta (Print). 1988, Vol 37, Num 5, pp 828-830, issn 0031-8949Article

Effects of tunneling on a-Si:H Schottky barriersMARIUCCI, L; GISLON, P; COLUZZA, C et al.Journal of applied physics. 1987, Vol 62, Num 8, pp 3285-3287, issn 0021-8979Article

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