FIELD EFFECT ON TRIGONAL SELENIUM CRYSTALS = EFFET DE CHAMP SUR DES CRISTAUX DE SELENIUM TRIGONALENGEMANN D; FUHS W.1972; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1972; VOL. 12; NO 2; PP. 491-498; ABS. ALLEM.; BIBL. 15 REF.Serial Issue

CHARAKTERISIERUNG VON SCHOTTKYDIODEN AUF DER BASIS VON AMORPHEM SILIZIUM = CHARACTERIZATION OF SCHOTTKY'S DIODES BASED ON AMORPHOUS SILICON = CARACTERISATION DE DIODES SCHOTTKY A BASE DE SILICIUM AMORPHEFUHS W; MELL H.1980; SONNENENERGIE. SEMINAR/1980/HAMBURG; DEU; DUESSELDORF: VEREIN DEUTSCHER INGENIEURE; DA. 1980; VOL. 2; PP. 931-941; BIBL. 9 REF.Conference Paper

THERMALLY STIMULATED CURRENTS IN AMORPHOUS SILICONFUHS W; MILLEVILLE M.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 98; NO 1; PP. K29-K32; BIBL. 10 REF.Article

Amorphous silicon solar cellsFUHS, W.Solar & wind technology. 1987, Vol 4, Num 1, pp 7-15, issn 0741-983XArticle

POSITRON TRAPPING IN ELECTRON-IRRADIATED SILICON CRYSTALSFUHS W; HOLZHAUER U; RICHTER FW et al.1980; APPL. PHYS.; ISSN 0340-3793; DEU; DA. 1980; VOL. 22; NO 4; PP. 415-419; BIBL. 10 REF.Article

STUDY OF POLARITON RESONANCES IN A CYANINE DYE CRYSTALWEISER G; FUHS W; HESSE HJ et al.1980; CHEM. PHYS.; ISSN 0301-0104; NLD; DA. 1980; VOL. 52; NO 1-2; PP. 183-191; BIBL. 17 REF.Article

DRIFT MOBILITY AND PHOTOCONDUCTIVITY IN AMORPHOUS SILICONFUHS W; MILLEVILLE M; STUKE J et al.1978; PHYS. STATUS SOLIDI, B; DDR; DA. 1978; VOL. 89; NO 2; PP. 495-502; ABS. GER; BIBL. 15 REF.Article

ELECTRONIC PROPERTIES OF AMORPHOUS SI_XGE_1-X: H FILMSHAUSCHILDT D; FISCHER R; FUHS W et al.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 102; NO 2; PP. 563-566; ABS. GER; BIBL. 8 REF.Article

EXTRAORDINARY EXCITON POLARITONS IN THE OPTICAL SPECTRA OF MOLECULAR CRYSTALS.HESSE HJ; FUHS W; WEISER G et al.1977; CHEM. PHYS.; NETHERL.; DA. 1977; VOL. 24; NO 3; PP. 399-405; BIBL. 17 REF.Article

Deep trapping of carriers in a-Si:H solar cells studied by transient photocurrentsWIECZOREK, H; FUHS, W.Physica status solidi. A. Applied research. 1989, Vol 114, Num 1, pp 413-418, issn 0031-8965, 6 p.Article

Drift mobility in n- and p-conducting a-Si:HHOHEISEL, M; FUHS, W.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1988, Vol 57, Num 3, pp 411-419, issn 0141-8637Article

Circular pipe-connectionsFUHS, W; STACHEL, H.Computers & graphics. 1988, Vol 12, Num 1, pp 53-57, issn 0097-8493Article

Transient photocurrents in a-Si:H diodes: effects of deep trappingWIECZOREK, H; FUHS, W.Physica status solidi. A. Applied research. 1988, Vol 109, Num 1, pp 245-253, issn 0031-8965Article

INFLUENCE OF LIGHT EXPOSURE ON THE TRANSPORT PROPERTIES OF A-SI:H FILMSHAUSCHILDT D; FUHS W; HELL H et al.1982; PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. 4/1982/STRESA; NLD/USA/GBR; DORDRECHT; BOSTON; LONDON: D. REIDEL PUBLISHING COMPANY; DA. 1982; PP. 448-452; BIBL. 15 REF.Conference Paper

SCHOTTKY BARRIERS ON P-TYPE A-SI:HGREEB KH; FUHS W; MELL H et al.1982; SOL. ENERGY MATER.; ISSN 0165-1633; NLD; DA. 1982; VOL. 7; NO 2; PP. 253-261; BIBL. 20 REF.Article

"METALLIC REFLECTANE" IN MOLECULAR CRYSTALS.HEESE HJ; FUHS W; WEISER G et al.1976; CHEM. PHYS. LETTERS; NETHERL.; DA. 1976; VOL. 41; NO 1; PP. 104-107; BIBL. 8 REF.Article

Transport and recombination in amorphous p-i-n-type solar cells studied by electrically detected magnetic resonanceLIPS, K; FUHS, W.Journal of applied physics. 1993, Vol 74, Num 6, pp 3993-3999, issn 0021-8979Article

Transient photocurrents in a-Si:H diodes: effects of deep trappingWIECZOREK, H; FUHS, W.Physica status solidi. A. Applied research. 1988, Vol 109, Num 1, pp 245-253, issn 0031-8965, 9 p.Article

ANNIHILATION OF POSITRONS IN ELECTRON-IRRADIATED SILICON CRYSTALSFUHS W; HOLZHAUER U; MANTL S et al.1978; PHYS. STATUS SOLIDI, B; DDR; DA. 1978; VOL. 89; NO 1; PP. 69-75; ABS. GER; BIBL. 19 REF.Article

THE INFLUENCE OF PREPARATION CONDITIONS ON THE HYDROGEN CONTENT OF AMORPHOUS GLOW-DISCHARGE SILICONMILLEVILLE M; FUHS W; DEMOND FJ et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 2; PP. 173-174; BIBL. 8 REF.Article

Recombination currents in microcrystalline silicon solar cells studied by electrically detected magnetic resonanceLIPS, K; FUHS, W; FINGER, F et al.sans titre. 2002, pp 1166-1169, isbn 0-7803-7471-1, 4 p.Conference Paper

Frequency-resolved spectroscopy and its application to low-temperature geminate recombination in a-Si:HSTACHOWITZ, R; SCHUBERT, M; FUHS, W et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1994, Vol 70, Num 6, pp 1219-1230, issn 0958-6644Article

Microwave-induced resonant changes in transport and recombination in hydrogenated amorphous siliconLIPS, K; SCHÜTTE, S; FUHS, W et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1992, Vol 65, Num 5, pp 945-959, issn 0958-6644Article

On the mechanism of doping and defect formation in a-Si :HPIERZ, K; FUHS, W; MELL, H et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1991, Vol 63, Num 1, pp 123-141, issn 0958-6644, 19 p.Article

On the fermi-level position in a-Si:H(P)KAZANSKII, A. G; FUHS, W; MELL, H et al.Physica status solidi. B. Basic research. 1990, Vol 160, Num 1, pp K25-K28, issn 0370-1972Article