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HIGH-POWER GA AS FET SHATTERS X-BAND 1 W BARRIER.FUKUTA M.1975; J. ELECTRON. ENGNG; JAP.; DA. 1975; NO 103; PP. 32-35Article

STATUS OF THE GAAS METAL-OXIDE-SEMICONDUCTOR TECHNOLOGYMIMURA T; FUKUTA M.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 6; PP. 1147-1155; BIBL. 53 REF.Article

An immunological study of changes of the thymus with agingFUKUTA, M.Nippon Geka Gakkai Zasshi. 1992, Vol 93, Num 7, pp 757-765, issn 0301-4894Article

FUJITSU'S GAAS FETS MOVE TOWARD HIGH SPEED AND HIGH RELIABILITYFUKUTA M; ITOH M.1980; IEE, J. ELECTRON. ENG.; ISSN 0385-4507; JPN; DA. 1980; VOL. 17; NO 165; PP. 32-34; BIBL. 4 REF.Article

GaAs discrete and IC components: some recent results in JapanFUKUTA, M.Alta frequenza. 1986, Vol 55, Num 3, pp 149-155, issn 0002-6557Conference Paper

HIGH POWER TRANSISTOR AMPLIFIER IN 2 GHZ BAND.FUKUTA M; ARAI Y; MURAI SI et al.1974; FUJITSU SCI. TECH. J.; JAP.; DA. 1974; VOL. 10; NO 3; PP. 83-103; BIBL. 4 REF.Article

CONSISTENCY OF DECOMPOSED GRANITE SOILS AND ITS RELATION TO ENGINEERING PROPERTIES.MATSUO SI; FUKUTA M; NISHIDA K et al.1970; SOILS AND FOUND., JAP.; 1970, VOL. 10, NUM. 0004, P. 1 A 9Miscellaneous

ELECTRICAL CHARACTERISTICS OF THE PLASMA-GROWN NATIVE-OXIDE/GAAS INTERFACEMIMURA T; YOKOYAMA N; FUKUTA M et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 10; PP. 642-644; BIBL. 7 REF.Article

PLANAR GAAS MOSFET INTEGRATED LOGICYOKOYAMA N; MIMURA T; FUKUTA M et al.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 6; PP. 1124-1128; BIBL. 17 REF.Article

GAAS MOSFETSMIMURA T; YOKOYAMA N; FUKUTA M et al.1978; FUJITSU SCI. TECH. J.; JPN; DA. 1978; VOL. 14; NO 4; PP. 45-72; BIBL. 15 REF.Article

VISIBLE LIGHT EMISSION FROM GAAS FIELD-EFFECT TRANSISTOR.MIMURA T; SUZUKI H; FUKUTA M et al.1977; PROC. I.E.E.E.; U.S.A.; DA. 1977; VOL. 65; NO 9; PP. 1407-1408; BIBL. 4 REF.Article

GAAS POWER FET.SUZUKI H; SUYAMA K; FUKUTA M et al.1976; FUJITSU SCI. TECH. J.; JAP.; DA. 1976; VOL. 12; NO 2; PP. 163-177; BIBL. 9 REF.Article

DESIGN AND PERFORMANCE OF GAAS NORMALLY-OFF MESFET INTEGRATED CIRCUITSSUYAMA K; KUSAKAWA H; FUKUTA M et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 27; NO 6; PP. 1092-1097; BIBL. 14 REF.Article

GAAS POWER FET. = TRANSISTOR A EFFET DE CHAMP DE PUISSANCE EN ARSENIURE DE GALLIUMSUZUKI H; SUYAMA K; FUKUTA M et al.1976; FUJITSU SCI. TECH. J.; JAP.; DA. 1976; VOL. 12; NO 2; PP. 163-177; BIBL. 9 REF.Article

NEW STRUCTURE OF ENHANCEMENT-MODE GAAS MICROWAVE M.O.S.F.E.T.MIMURA T; ODANI K; YOKOYAMA N et al.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 16; PP. 500-502; BIBL. 7 REF.Article

SI UHF MOS HIGH-POWER FET.MORITA Y; TAKAHASHI H; MATAYOSHI H et al.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 11; PP. 733-734; BIBL. 5 REF.Article

AN MSI GAAS INTEGRATED CIRCUIT: 4 BIT ARITHMETIC AND LOGIC UNITSUYAMA K; KUSAKAWA H; OKAMURA S et al.1982; IEEE JOURNAL OF SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 4; PP. 653-657; BIBL. 8 REF.Article

THE CONSTITUENTS OF THE LEAVES OF COMANTHOSPHACE JAPONICA S. MOORE (LABIATAE): ISOLATION OF TWO NEW FLAVONE GLYCOSIDES, COMANTHOSIDES A AND BARISAWA M; FUKUTA M; SHIMIZU M et al.1979; CHEM. PHARM. BULL.; JPN; DA. 1979; VOL. 27; NO 5; PP. 1252-1254; BIBL. 3 REF.Article

LOW-TEMPERATURE PLASMA OXIDATION OF GAAS.YOKOYAMA N; MIMURA T; ODANI K et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 1; PP. 58-60; BIBL. 7 REF.Article

GAAS MICROWAVE POWER FET.FUKUTA M; SUYAMA K; SUZUKI H et al.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 4; PP. 388-394; BIBL. 14 REF.Article

Recent developments in microwave GaAs FETs in JapanFUKUTA, M; HIRACHI, Y.RCA review. 1985, Vol 46, Num 4, pp 441-463, issn 0033-6831Article

4-GHZ 15-W POWER GAAS MESFETFUKUTA M; MIMURA T; SUZUKI H et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 559-563; BIBL. 10 REF.Article

OBSERVATION OF ELECTRICAL BREAKDOWN AND NEGATIVE RESISTANCE IN AN EPITAXIAL GA AS FILM OF A FIELD EFFECT STRUCTURE.MIMURA T; FUKUTA M; YOKOYAMA N et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 11; PP. 5111-5112; BIBL. 4 REF.Article

GAAS MOSFET HIGH-SPEED LOGICYOKOYAMA N; MIMURA T; KUSAKAWA H et al.1980; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1980; VOL. 28; NO 5; PP. 483-486; BIBL. 12 REF.Article

INVITED: GAAS X-BAND POWER FET.FUKUTA M; SUYAMA K; YOKOYAMA N et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; SUPPL. 1; PP. 151-156; BIBL. 4 REF.; (CONF. SOLID STATE DEVICES. 7. PROC.; TOKYO; 1975)Conference Paper

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