STATUS OF THE GAAS METAL-OXIDE-SEMICONDUCTOR TECHNOLOGYMIMURA T; FUKUTA M.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 6; PP. 1147-1155; BIBL. 53 REF.Article

GaAs discrete and IC components: some recent results in JapanFUKUTA, M.Alta frequenza. 1986, Vol 55, Num 3, pp 149-155, issn 0002-6557Conference Paper

HIGH POWER TRANSISTOR AMPLIFIER IN 2 GHZ BAND.FUKUTA M; ARAI Y; MURAI SI et al.1974; FUJITSU SCI. TECH. J.; JAP.; DA. 1974; VOL. 10; NO 3; PP. 83-103; BIBL. 4 REF.Article

CONSISTENCY OF DECOMPOSED GRANITE SOILS AND ITS RELATION TO ENGINEERING PROPERTIES.MATSUO SI; FUKUTA M; NISHIDA K et al.1970; SOILS AND FOUND., JAP.; 1970, VOL. 10, NUM. 0004, P. 1 A 9Miscellaneous

PLANAR GAAS MOSFET INTEGRATED LOGICYOKOYAMA N; MIMURA T; FUKUTA M et al.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 6; PP. 1124-1128; BIBL. 17 REF.Article

GAAS MOSFETSMIMURA T; YOKOYAMA N; FUKUTA M et al.1978; FUJITSU SCI. TECH. J.; JPN; DA. 1978; VOL. 14; NO 4; PP. 45-72; BIBL. 15 REF.Article

VISIBLE LIGHT EMISSION FROM GAAS FIELD-EFFECT TRANSISTOR.MIMURA T; SUZUKI H; FUKUTA M et al.1977; PROC. I.E.E.E.; U.S.A.; DA. 1977; VOL. 65; NO 9; PP. 1407-1408; BIBL. 4 REF.Article

GAAS POWER FET.SUZUKI H; SUYAMA K; FUKUTA M et al.1976; FUJITSU SCI. TECH. J.; JAP.; DA. 1976; VOL. 12; NO 2; PP. 163-177; BIBL. 9 REF.Article

DESIGN AND PERFORMANCE OF GAAS NORMALLY-OFF MESFET INTEGRATED CIRCUITSSUYAMA K; KUSAKAWA H; FUKUTA M et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 27; NO 6; PP. 1092-1097; BIBL. 14 REF.Article

GAAS POWER FET. = TRANSISTOR A EFFET DE CHAMP DE PUISSANCE EN ARSENIURE DE GALLIUMSUZUKI H; SUYAMA K; FUKUTA M et al.1976; FUJITSU SCI. TECH. J.; JAP.; DA. 1976; VOL. 12; NO 2; PP. 163-177; BIBL. 9 REF.Article

NEW STRUCTURE OF ENHANCEMENT-MODE GAAS MICROWAVE M.O.S.F.E.T.MIMURA T; ODANI K; YOKOYAMA N et al.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 16; PP. 500-502; BIBL. 7 REF.Article

SI UHF MOS HIGH-POWER FET.MORITA Y; TAKAHASHI H; MATAYOSHI H et al.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 11; PP. 733-734; BIBL. 5 REF.Article

GAAS MOSFET HIGH-SPEED LOGICYOKOYAMA N; MIMURA T; KUSAKAWA H et al.1980; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1980; VOL. 28; NO 5; PP. 483-486; BIBL. 12 REF.Article

INVITED: GAAS X-BAND POWER FET.FUKUTA M; SUYAMA K; YOKOYAMA N et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; SUPPL. 1; PP. 151-156; BIBL. 4 REF.; (CONF. SOLID STATE DEVICES. 7. PROC.; TOKYO; 1975)Conference Paper

POWER GAAS MESFET WITH A HIGH DRAIN-SOURCE BREAKDOWN VOLTAGE.FUKUTA M; SUYAMA K; SUZUKI H et al.1976; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1976; VOL. 24; NO 6; PP. 312-317; BIBL. 14 REF.Article

Clinicostatistical study of lower lip mucocelesYAMASOBA, T; TAYAMA, N; SYOJI, M et al.Head & neck. 1990, Vol 12, Num 4, pp 316-320, issn 1043-3074, 5 p.Article

A study on stability of VCR tape transportUCHIYAMA, M; UEDA, Y; NOGUCHI, K et al.IEEE transactions on consumer electronics. 1993, Vol 39, Num 3, pp 313-319, issn 0098-3063Article

Foaming characteristics of an oil-refrigerant mixtureYANAGISAWA, T; SHIMIZU, T; FUKUTA, M et al.International journal of refrigeration. 1991, Vol 14, Num 3, pp 132-136, issn 0140-7007, 5 p.Article

Mathematicl model of vane compressors for computer simulation of automotive air conditioning cycleFUKUTA, M; YANAGISAWA, T; SHIMIZU, T et al.JSME international journal. Series B, fluids and thermal engineering. 1995, Vol 38, Num 2, pp 199-205, issn 1340-8054Article

Insulin fragments as a carrier for peptide delivery across the blood-brain barrierFUKUTA, M; OKADA, H; IINUMA, S et al.Pharmaceutical research. 1994, Vol 11, Num 12, pp 1681-1688, issn 0724-8741Article

Nucleotide sequence of the psbl gene of the cyanobacterium, Anacystis nidulans 6301JING CHUN CHEN; BING YUAN MENG; FUKUTA, M et al.Nucleic acids research. 1990, Vol 18, Num 13, issn 0305-1048, p. 4017Article

Tailored pulse current dense Z-pinch dischargeISHII, S; HARA, T; SONODA, F et al.Electrical engineering in Japan. 1986, Vol 106, Num 3, pp 10-17, issn 0424-7760Article

Herbicidal and fungicidal activities of lactones in Kava (Piper methysticum)XUAN, T. D; ELZAAWELY, A. A; FUKUTA, M et al.Journal of agricultural and food chemistry (Print). 2006, Vol 54, Num 3, pp 720-725, issn 0021-8561, 6 p.Article

Molecular analysis of the deletion mutants in the E homeotic complex of the silkworm Bombyx moriUENO, K; CHI-CHUNG HUI; FUKUTA, M et al.Development (Cambridge). 1992, Vol 114, Num 3, pp 555-563, issn 0950-1991Article

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