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BEITRAEGE ZUR CHEMIE DES BORS. CXIII: ZUR DARSTELLUNG VON 1,1-BIS(DIORGANYLBORYL)-2,2-DIMETHYLHYDRAZINEN = CONTRIBUTIONS A LA CHIMIE DU BORE. CXIII: SYNTHESE DE BIS-DIORGANYLBORYL-1,1 DIMETHYL-2,2 HYDRAZINESFUSSSTETTER H; NOETH H.1981; LIEBIGS ANN. CHEM.; ISSN 0170-2041; DEU; DA. 1981; NO 4; PP. 633-641; ABS. ENG; BIBL. 16 REF.Article

BEITRAEGE ZUR CHEMIE DES BORS. XCVI: DIE N-METALLIERUNG N-SUBSTITUIERTER AMINODIMETHYLBORANE MIT ORGANOLITHIUM-VERBINDUNGEN = CHIMIE DU BORE. XCVI: N-METALLATION D'AMINODIMETHYLBORANES N-SUBSTITUES PAR LES COMPOSES ORGANOLITHIESFUSSSTETTER H; NOTH H.1978; CHEM. BER.; DEU; DA. 1978; VOL. 111; NO 11; PP. 3596-3607; ABS. ENG; BIBL. 27 REF.Article

BEITRAEGE ZUR CHEMIE DES BORS. LXXXVIII. DIE N-METALLIERUNG VON DIMETHYL(METHYLAMINO) BORAN MIT ORGANOLITHIUM-VERBINDUNGEN. = CONTRIBUTIONS A LA CHIMIE DU BORE. LXXXVIII. N-METALLATION DE DIMETHYL METHYLAMINO BORANE AVEC LES COMPOSES ORGANOLITHIESFUSSSTETTER H; KROLL R; NOTH H et al.1977; CHEM. BER.; DTSCH.; DA. 1977; VOL. 110; NO 12; PP. 3829-3841; ABS. ANGL.; BIBL. 28 REF.Article

BEITRAEGE ZUR CHEMIE DES BORS. CXVIII: STRUKTUR UND DYNAMIK VON HEXAMETHYLBORAZIN-ALUMINIUMBROMID = CONTRIBUTIONS A LA CHIMIE DU BORE. CXVIII: STRUCTURE ET DYNAMIQUE DE L'HEXAMETHYLBORAZINE-BROMURE D'ALUMINIUMANTON K; FUSSSTETTER H; NOETH H et al.1981; CHEM. BER.; ISSN 0009-2940; DEU; DA. 1981; VOL. 114; NO 8; PP. 2723-2730; ABS. ENG; BIBL. 13 REF.Article

BEITRAEGE ZUR CHEMIE DES BORS. LXXXIII. UEBER DIE ANOMALE DIMERISIERUNG VON 3,5DIFLUOR-1,2,4-TRIMETHYL-1,2,4,3,5-TRIAZADIBOROLIDIN. = CHIMIE DU BORE. LXXXIII. DIMERISATION ANORMALE DE DIFLUORO-3,5 TRIMETHYL-1,2,4 TRIAZADIBOROLIDINE-1,2,4,3,5FUSSSTETTER H; NOTH H; WINTERSTEIN W et al.1977; CHEM. BER.; DTSCH.; DA. 1977; VOL. 110; NO 5; PP. 1931-1938; ABS. ANGL.; BIBL. 18 REF.Article

KERNRESONANZSPEKTROSKOPISCHE UNTERSUCHUNGEN AN BORVERBINDUNGEN. XIV. INDIREKTE KERN-SPIN-SPIN-KOPPLUNGEN ZWISCHEN 11B UND DIREKT BORGEBUNDENEN KERNEN. = ETUDE EN RESONANCE MAGNETIQUE NUCLEAIRE DES COMPOSES DU BORE. XIV. COUPLAGE INDIRECT SPIN-SPIN NUCLEAIRE DE 11B AVEC D'AUTRES NOYAUX DIRECTEMENT LIESFUSSSTETTER H; NOTH H; WRACKMEYER B et al.1977; CHEM. BER.; DTSCH.; DA. 1977; VOL. 110; NO 9; PP. 3172-3181; ABS. ANGL.; BIBL. 17 REF.Article

BEITRAEGE ZUR CHEMIE DES BORS 112: MOLEKUEL- UND KRISTALLSTRUKTUR EINER REIHE FUENFGLIEDRIGER 6PI -ELEKTRONENHETEROCYCLEN MIT BOR, SCHWEFEL UND STICKSTOFF ALS RINGGLIEDERN = CONTRIBUTIONS A LA CHIMIE DU BORE, 112: STRUCTURE CRISTALLINE ET MOLECULAIRE D'UNE SERIE D'HETEROCYCLES A CINQ MEMBRES ET 6 ELECTRONS PI AVEC LE BORE, LE SOUFRE ET L'AZOTE COMME MEMBRES DU CYCLEFUSSSTETTER H; NOETH H; PETERS K et al.1980; CHEM. BER.; ISSN 0009-2940; DEU; DA. 1980; VOL. 113; NO 12; PP. 3881-3890; ABS. ENG; BIBL. 29 REF.Article

Sub-quarter-micron silicon issues in the 200/300 mm conversion eraFUSSSTETTER, H; RICHTER, H; UMENO, M et al.Microelectronic engineering. 2001, Vol 56, Num 1-2, issn 0167-9317, 229 p.Conference Proceedings

Beiträge zur Chemie des Bors. CXLII: Über einige Substitutionsreaktionen an 1,3-Dimethyl-1,3,2-diazaborolidinen und die anomale Dimerisierung des 2-Fluor-Derivats = Contributions à la chimie du bore. CXLII: Quelques réactions de substitution des diméthyl-1,3 diazaborolidines-1,3,2 et la dimérisation anormale du dérivé fluoro-2 = Contributions to the chemistry of boron. CXLII: Some substitution reactions of 1,3-dimethyl-1,3,2-diazaborolidines and the anomalous dimerization of its 2-fluoro derivativeANTON, K; FUSSSTETTER, H; NÖTH, H et al.Chemische Berichte. 1984, Vol 117, Num 7, pp 2542-2546, issn 0009-2940Article

Evidence for SiH4 formation during the reaction of water with a silicon surfaceLAMPERT, I; FUSSSTETTER, H; JACOB, H et al.Journal of the Electrochemical Society. 1986, Vol 133, Num 7, pp 1472-1474, issn 0013-4651Article

Production maturity of 64 M/256 M furnace and RTP processes on 300 mm wafersKÜRNER, W.Microelectronic engineering. 2001, Vol 56, Num 1-2, pp 41-48, issn 0167-9317Conference Paper

Effect of doping on point defect incorporation during silicon growthVORONKOV, V. V; FALSTER, R.Microelectronic engineering. 2001, Vol 56, Num 1-2, pp 165-168, issn 0167-9317Conference Paper

Relation between temperature gradient at growth interface and growth rate in Czochralski silicon examined by heat balance equationNATSUME, A; TANAHASHI, K; INOUE, N et al.Microelectronic engineering. 2001, Vol 56, Num 1-2, pp 129-132, issn 0167-9317Conference Paper

Transmission electron microscopic observation of oxygen precipitates in nitrogen-doped siliconLIBEN LI; DEREN YANG.Microelectronic engineering. 2001, Vol 56, Num 1-2, pp 205-208, issn 0167-9317Conference Paper

TiN barriers for high-k capacitors : simulations and experimental resultsTHEILER, T; SACHER, N; FROESCHLE, B et al.Microelectronic engineering. 2001, Vol 56, Num 1-2, pp 181-185, issn 0167-9317Conference Paper

An in-situ X-ray topography observation of dislocations, crystal-melt interface and melting of siliconYUREN WANG; KAKIMOTO, Koichi.Microelectronic engineering. 2001, Vol 56, Num 1-2, pp 143-146, issn 0167-9317Conference Paper

Determination of electroless kinetic : a QCM studyZOUHOU, A; VERGNES, H; DUVERNEUIL, P et al.Microelectronic engineering. 2001, Vol 56, Num 1-2, pp 177-180, issn 0167-9317Conference Paper

Optical in-situ measurement of the dissolution rate of a silica-Czochralski-crucible with silicon melt and comparison to ex-situ measurementsMÜHE, A; MÜLLER, G.Microelectronic engineering. 2001, Vol 56, Num 1-2, pp 147-152, issn 0167-9317Conference Paper

Equilibrium point defect concentration in a growing silicon crystalTANAHASHI, K; INOUE, N; AKUTSU, N et al.Microelectronic engineering. 2001, Vol 56, Num 1-2, pp 133-137, issn 0167-9317Conference Paper

Intrinsic gettering of 300 mm CZ wafersBIALAS, F; WINKLER, R; DIETRICH, H et al.Microelectronic engineering. 2001, Vol 56, Num 1-2, pp 157-163, issn 0167-9317Conference Paper

New materials for active and passive integrated devices for wireless applicationsGILL, P; MILLER, M; NGUYEN, B. Y et al.Microelectronic engineering. 2001, Vol 56, Num 1-2, pp 169-175, issn 0167-9317Conference Paper

In situ Raman spectroscopy study on silicon surface in NH4OH/H2O2 and HCl/H2O2 aqueous solutionsWANG, J; TU, H; ZHOU, Q et al.Microelectronic engineering. 2001, Vol 56, Num 1-2, pp 221-225, issn 0167-9317Conference Paper

Enhancement of gettering efficiencies of different silicon substrates during a 0.18 μm LTB CMOS process simulation : Stratigraphy by a novel chemical ultra-trace depth-profilingHOELZL, R; FABRY, L; RANGE, K.-J et al.Microelectronic engineering. 2001, Vol 56, Num 1-2, pp 153-156, issn 0167-9317Conference Paper

Wider latitude for sophisticated devices by incorporating carbon into crystalline Si or SiGeOSTEN, H. J; RÜCKER, H; LIU, J. P et al.Microelectronic engineering. 2001, Vol 56, Num 1-2, pp 209-212, issn 0167-9317Conference Paper

Issues for the larger diameter epitaxial waferIMAI, M; MAYUSUMI, M; INOUE, K et al.Microelectronic engineering. 2001, Vol 56, Num 1-2, pp 109-115, issn 0167-9317Conference Paper

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