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Desorption from spin-on glassTOMPKINS, H. G; TRACY, C.Journal of the Electrochemical Society. 1989, Vol 136, Num 8, pp 2331-2335, issn 0013-4651, 5 p.Article

New GaAs quantum wires on {111}B facets by selective MOCVDFUKUI, T; ANDO, S.Electronics Letters. 1989, Vol 25, Num 6, pp 410-412, issn 0013-5194, 3 p.Article

29th international electronics manufacturing technology symposium (San Jose CA CA, 14-16 July 2004)IEEE/CPMT/SEMI international electronics manufacturing technology. Symposium. 2004, isbn 0-7803-8582-9, 1Vol, XII-354 p, isbn 0-7803-8582-9Conference Proceedings

2000 International Symposium on Semiconductor ManufacturingHATTORI, Takeshi.IEEE transactions on semiconductor manufacturing. 2001, Vol 14, Num 3, pp 180-206, issn 0894-6507Conference Proceedings

Development of high contrast siloxane electron-beam resist and application for submicron pattern transferSUGITO, S; ISHIDA, S; IIDA, Y et al.NEC research & development. 1989, Num 92, pp 18-24, issn 0547-051X, 7 p.Article

Laser writing of high-purity gold linesJUBBER, M; WILSON, J. I. B; DAVIDSON, J. L et al.Applied physics letters. 1989, Vol 55, Num 14, pp 1477-1479, issn 0003-6951, 3 p.Article

A planarization technology using a bias-deposited dielectric film and an etch-back processFUJII, S; FUKUMOTO, M; FUSE, G et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1829-1833, issn 0018-9383, 1Article

Improvement of latchup hardness by geometry and technology tuningMAZURE, C; RECZEK, W; TAKACS, D et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 10, pp 1609-1615, issn 0018-9383Article

Advanced short-time thermal processing for Si-based CMOS devices (Paris, 27 April - 2 May 2003)Roozeboom, F; Gusev, E.P; Chen, L.J et al.Proceedings - Electrochemical Society. 2003, issn 0161-6374, isbn 1-56677-396-2, XIV, 480 p, isbn 1-56677-396-2Conference Proceedings

Lens heating induced focus drift of i-line Step & scan: Correction and control in a manufacturing environmentHO, Grace H; CHENG, Anthony T; YEH, Hsiao-L et al.SPIE proceedings series. 2001, pp 289-296, isbn 0-8194-4030-2Conference Paper

IMAPS Poland International ConferenceDZIEDZIC, Andrzej.Microelectronics and reliability. 2008, Vol 48, Num 6, pp 859-918, issn 0026-2714, 59 p.Conference Paper

Design and process integration for microelectronic manufacturing II (Santa Clara CA, 26-28 February 2003)Starikov, Alexander.SPIE proceedings series. 2003, isbn 0-8194-4847-8, VIII, 418 p, isbn 0-8194-4847-8Conference Proceedings

Silicide/polysilicon layer formation using dynamic recoil mixingKOZICKI, M. N; ROBERTSON, J. M; KHEYRANDISH, H et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 3, pp 873-875, issn 0013-4651, 3 p.Article

MNE'08. The 34th International Conference on Micro- and Nano-Engineering (MNE)RAPTIS, Ioannis; GOGOLIDES, Evangelos.Microelectronic engineering. 2009, Vol 86, Num 4-6, issn 0167-9317, 1100 p.Conference Proceedings

W-CMP alignment using ASML's ATHENA system on an I-line StepperPRASAD, K. John; RAJAN, D. Arunagiri; TAN YEW KONG et al.SPIE proceedings series. 2001, pp 79-88, isbn 0-8194-4030-2Conference Paper

Coulomb interactions in a shaped ion beam pattern generatorVIJGEN, L. J; KRUIT, P.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2809-2813, issn 1071-1023Conference Paper

High-resolution imaging of defects in III-V compound wafers by near-infra-red phase contrast microscopyMONTGOMERY, P. C; FILLARD, J. P.Electronics Letters. 1989, Vol 25, Num 2, pp 89-90, issn 0013-5194, 2 p.Article

Reactively sputtered WSiN film suppresses As and Ga outdiffusionASAI, K; SUGAHARA, H; MATSUOKA, Y et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1988, Vol 6, Num 5, pp 1526-1529, issn 0734-211XArticle

The use of vector scanning for producing arbitrary surface contours with a focused ion beamCROW, G; PURETZ, J; ORLOFF, J et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1988, Vol 6, Num 5, pp 1605-1607, issn 0734-211XConference Paper

Proceedings of the 32nd International Conference on Micro- and Nano-Engineering, Barcelona, 17-20 September 2006BAUSELLS, Joan; ABADAL, Gabriel; PEREZ-MURANO, Francesc et al.Microelectronic engineering. 2007, Vol 84, Num 5-8, issn 0167-9317, 1175 p.Conference Proceedings

Copper interconnects, new contact metallurgies/structures, and low-k interlevel dielectrics II (Orlando FL, 12-17 October 2003)Mathad, G.S; Rathore, H.S; Konda, K et al.Proceedings - Electrochemical Society. 2003, issn 0161-6374, isbn 1-56677-390-3, IX, 276 p, isbn 1-56677-390-3Conference Proceedings

International Symposium on Semiconductor Manufacturing (ISSM'98)HATTORI, T; DOERING, R. R.IEEE transactions on semiconductor manufacturing. 1999, Vol 12, Num 3, pp 269-322, issn 0894-6507Conference Proceedings

Lift-off-Strukturierung dicker vakuumtechnisch abgeschiedener Schichten = Dift-off of thick vapour deposited layersREICHE, K; HAN, R; URBANSKY, N et al.Wissenschaftliche Zeitschrift der Technischen Universität Dresden. 1989, Vol 38, Num 4, pp 79-82, issn 0043-6925, 4 p.Article

High-aspect-ratio resist pattern fabrication by alkaline surface treatmentENDO, M; SASAGO, M; MATSUOKA, K et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1989, Vol 7, Num 5, pp 1076-1079, issn 0734-211X, 4 p.Article

Spin coating: one-dimensional modelBORNSIDE, D. E; MACOSKO, C. W; SCRIVEN, L. E et al.Journal of applied physics. 1989, Vol 66, Num 11, pp 5185-5193, issn 0021-8979, 9 p.Article

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