The phenomenology of dielectric breakdown in thin silicon dioxide films: Al cathodes and p-type Si anodesFALSTER, R.Journal of applied physics. 1989, Vol 66, Num 7, pp 3355-3370, issn 0021-8979, 16 p.Article

Vacancy-type microdefect formation in Czochralski siliconVORONKOV, V. V; FALSTER, R.Journal of crystal growth. 1998, Vol 194, Num 1, pp 76-88, issn 0022-0248Article

The effect of nitrogen on void formation in Czochralski silicon crystalsVORONKOV, V. V; FALSTER, R.Journal of crystal growth. 2005, Vol 273, Num 3-4, pp 412-423, issn 0022-0248, 12 p.Article

Diffusion-limited growth of single- and double-octahedral voids in silicon and the effect of surface oxygen monolayerVORONKOV, V. V; FALSTER, R.Journal of crystal growth. 2001, Vol 226, Num 2-3, pp 192-202, issn 0022-0248Article

The gettering of transition metals by oxygen-related defects in siliconFALSTER, R; BERGHOLZ, W.Journal of the Electrochemical Society. 1990, Vol 137, Num 5, pp 1548-1559, issn 0013-4651Article

Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski siliconVORONKOV, V. V; FALSTER, R.Journal of crystal growth. 1999, Vol 204, Num 4, pp 462-474, issn 0022-0248Article

Intrinsic point defects and impurities in silicon crystal growthVORONKOV, V. V; FALSTER, R.Journal of the Electrochemical Society. 2002, Vol 149, Num 3, pp G167-G174, issn 0013-4651Article

Contamination of silicon by iron at temperatures below 800 °C : SOLAR CELLSMURPHY, J. D; FALSTER, R. J.Physica status solidi. Rapid research letters (Print). 2011, Vol 5, Num 10-11, pp 370-372, issn 1862-6254, 3 p.Article

Long-time relaxation of silicon-resistivity after annihilation of thermal donorsVORONKOVA, G. I; BATUNINA, A. V; VORONKOV, V. V et al.Proceedings - Electrochemical Society. 2004, pp 275-285, issn 0161-6374, isbn 1-56677-418-7, 11 p.Conference Paper

Measurement of nitrogen concentration in CZ-Si below 10¹⁴/cm³ by IR absorption spectroscopyNAKATSU, M; HASHIMOTO, A; NATSUME, A et al.Proceedings - Electrochemical Society. 2004, pp 102-108, issn 0161-6374, isbn 1-56677-418-7, 7 p.Conference Paper

On the influence of nitrogen and carbon on the formation of dislocations in heavily doped silicon wafersWINKLER, R; KRAUTBAUER, R; PECH, R et al.Proceedings - Electrochemical Society. 2004, pp 55-59, issn 0161-6374, isbn 1-56677-418-7, 5 p.Conference Paper

Impurity locking of dislocations in siliconGIANNATTASIO, A; MURPHY, J. D; SENKADER, S et al.Proceedings - Electrochemical Society. 2004, pp 39-54, issn 0161-6374, isbn 1-56677-418-7, 16 p.Conference Paper

Radiation-induced deep levels in lead and tin doped N-type Czochralski siliconDAVID, M.-L; SIMOEN, E; CLAEYS, C et al.Proceedings - Electrochemical Society. 2004, pp 395-406, issn 0161-6374, isbn 1-56677-418-7, 12 p.Conference Paper

'Semi-insulating' silicon using deep level impurity doping: problems and potentialMALLIK, Kanad; FALSTER, R. J; WILSHAW, P. R et al.Semiconductor science and technology. 2003, Vol 18, Num 6, pp 517-524, issn 0268-1242, 8 p.Article

Gettering of copper to oxidation induced stacking faults in siliconDE COTEAU, M. D; WILSHAW, P. R; FALSTER, R et al.Physica status solidi. A. Applied research. 1990, Vol 117, Num 2, pp 403-408, issn 0031-8965Article

Formation and control of defects in nitrogen doped silicon crystalsHUBER, A; LAMBERT, U; HÄCKL, W et al.Proceedings - Electrochemical Society. 2004, pp 77-85, issn 0161-6374, isbn 1-56677-418-7, 9 p.Conference Paper

Effective lifetime of minority carriers in silicon: The role of heat- and hydrogen plasma treatmentsULYASHIN, A; SIMOEN, E; CARNEL, L et al.Proceedings - Electrochemical Society. 2004, pp 334-345, issn 0161-6374, isbn 1-56677-418-7, 12 p.Conference Paper

Hydrogen diffusion characterized by hydrogen enhanced thermal donor formation in p-type Czochralski silicon at temperatures between 350 and 450 °CHUANG, Y. L; MA, Y; JOB, R et al.Proceedings - Electrochemical Society. 2004, pp 419-427, issn 0161-6374, isbn 1-56677-418-7, 9 p.Conference Paper

Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETsMARTINO, J. A; RAFI, J. M; MERCHA, A et al.Proceedings - Electrochemical Society. 2004, pp 346-356, issn 0161-6374, isbn 1-56677-418-7, 11 p.Conference Paper

Thermal evolution of hydrogen related defects in silicon investigated by μ-Raman spectroscopyMA, Y; HUANG, Y. L; JOB, R et al.Proceedings - Electrochemical Society. 2004, pp 385-394, issn 0161-6374, isbn 1-56677-418-7, 10 p.Conference Paper

Trapping mechanisms by cavities for metallic impurities in monocristalline siliconREGULA, G; EL BOUAYADI, R; PICHAUD, B et al.Proceedings - Electrochemical Society. 2004, pp 208-217, issn 0161-6374, isbn 1-56677-418-7, 10 p.Conference Paper

Nitrogen in silicon: Properties and impact on grown-in microdefectsVORONKOV, V. V; FALSTER, R.Proceedings - Electrochemical Society. 2004, pp 86-101, issn 0161-6374, isbn 1-56677-418-7, 16 p.Conference Paper

A kinetic model for p-type doping in silicon epitaxy by CVDMEHTA, Bhavesh; MENG TAO.Proceedings - Electrochemical Society. 2004, pp 12-22, issn 0161-6374, isbn 1-56677-418-7, 11 p.Conference Paper

FTIR measurement of nitrogen in silicon using shuttle type sample stageWATANABE, Masaharu; TAKENAWA, Noriaki.Proceedings - Electrochemical Society. 2004, pp 121-131, issn 0161-6374, isbn 1-56677-418-7, 11 p.Conference Paper

Accurate modeling of copper precipitation kinetics including fermi level dependenceGUO, Hsiu-Wu; DUNHAM, Scott T.Proceedings - Electrochemical Society. 2004, pp 165-175, issn 0161-6374, isbn 1-56677-418-7, 11 p.Conference Paper