Dynamical transport theory of two-dimensional systemsFARVACQUE, J.-L.Physica status solidi. B. Basic research. 1994, Vol 181, Num 2, pp 405-419, issn 0370-1972Article

Improvement of Debye-Hückel evaluation of free carrier screening effects in semiconductorsFARVACQUE, J. L.Physica status solidi. B. Basic research. 1986, Vol 134, Num 1, pp 343-349, issn 0370-1972Article

Definition of a collision time tensor for electric transport in the presence in anisotropic scattering mechanisms. Application to the case of dislocation scattering in GaAsFARVACQUE, J.-L.Semiconductor science and technology. 1995, Vol 10, Num 7, pp 914-921, issn 0268-1242Article

Dynamical transport theories versus semi-classical solutions of the Boltzmann kinetic equationFARVACQUE, J.-L.Physica status solidi. B. Basic research. 1994, Vol 181, Num 1, pp 189-200, issn 0370-1972Article

Different annealing behaviour of the metastable state in GaAsVIGNAUD, D; FARVACQUE, J. L.Solid state communications. 1986, Vol 60, Num 6, pp 527-529, issn 0038-1098Article

Anisotropie des propriétés de transport électrique des systèmes électroniques bidimensionnels induite par des défauts linéaires = Transport properties anisotropy of two-dimensionnal electron gas induced by linear defectsBougrioua, Zahia; Farvacque, J.-L.1994, 247 p.Thesis

Mécanismes de recombinaison des paires électron-trou dans les semiconducteurs III-V = Electron-hole pairs recombination mechanisms in III-V semiconductorsMiri, Adel; Farvacque, J.-L.1995, 157 p.Thesis

Electronic dielectric response of composite materials: application to two-dimensional electronic transportFARVACQUE, J. L; BOUGRIOUA, Z.Semiconductor science and technology. 1994, Vol 9, Num 7, pp 1324-1331, issn 0268-1242Article

A quantitative study of the creation of EL2 defects in GaAs by plastic deformationVIGNAUD, D; FARVACQUE, J. L.Journal of applied physics. 1989, Vol 65, Num 4, pp 1516-1520, issn 0021-8979Article

Free-carrier optical absorption induced by dislocation scattering mechanisms in III-V compoundsVIGNAUD, D; FARVACQUE, J. L.Physica status solidi. B. Basic research. 1984, Vol 126, Num 1, pp 351-359, issn 0370-1972Article

Strain fields due to differential dilatation at metal/semiconductor contacts and resulting piezoelectrical fields in GaAsFARVACQUE, J. L; FRANCOIS, P.Solid-state electronics. 1993, Vol 36, Num 2, pp 205-211, issn 0038-1101Article

Optical absorption studies of plastically deformed InSbVIGNAUD, D; FARVACQUE, J. L.Physica status solidi. B. Basic research. 1984, Vol 125, Num 2, pp 785-794, issn 0370-1972Article

EBIC contrast theory of dislocations: intrinsic recombination propertiesFARVACQUE, J. L; SIEBER, B.Revue de physique appliquée. 1990, Vol 25, Num 4, pp 353-359, issn 0035-1687Article

Galvanomagnetic properties of dislocations in GaAsFERRE, D; FARVACQUE, J. L.Revue de physique appliquée. 1990, Vol 25, Num 4, pp 323-332, issn 0035-1687Article

Free-carrier optical absorption induced by dislocation scattering mechanisms in semiconductorsVIGNAUD, D; FARVACQUE, J. L.Physica status solidi. B. Basic research. 1989, Vol 156, Num 2, pp 717-723, issn 0370-1972Article

Effect of threading dislocations on carrier mobility in AlGaN/GaN quantum wellsCAROSELLA, F; FARVACQUE, J.-L.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 32, issn 0953-8984, 325210.1-325210.9Article

Charged dislocation induced optical absorption in GaAsVIGNAUD, D; FARVACQUE, J. L.Journal of applied physics. 1989, Vol 65, Num 3, pp 1261-1264, issn 0021-8979Article

Intrinsic free carrier mobility of quantum wells in polar materialsFARVACQUE, J.-L; CAROSELLA, F.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 12, pp 125344.1-125344.9, issn 1098-0121Article

Numerical determination of shallow electronic states bound by dislocations in semiconductorsFARVACQUE, J.-L; FRANCOIS, P.Physica status solidi. B. Basic research. 2001, Vol 223, Num 3, pp 635-648, issn 0370-1972Article

Connection between the Schoeck and the Haasen analysis of thermally activated dislocation glide in semiconductorsZONGO, I; FARVACQUE, J. L.Physica status solidi. A. Applied research. 1994, Vol 142, Num 2, pp 383-388, issn 0031-8965Article

Dislocation energy bands in GaAs: an optical absorption studyVIGNAUD, D; FARVACQUE, J. L.Journal of applied physics. 1990, Vol 67, Num 1, pp 281-286, issn 0021-8979Article

Simple determination of ac conductivity for multicarrier systemsFARVACQUE, J. L; VIGNAUD, D.Physical review. B, Condensed matter. 1985, Vol 31, Num 2, pp 1041-1046, issn 0163-1829Article

Non-radiative electron-hole pair recombination in degraded GaAs/GaAlAs double heterostructuresVIGNAUD, D; FARVACQUE, J. L; EL HICHOU, A et al.Semiconductor science and technology. 1994, Vol 9, Num 12, pp 2205-2209, issn 0268-1242Article

About the dislocation screening chargeFERRE, D; DIALLO, A; FARVACQUE, J. L et al.Revue de physique appliquée. 1990, Vol 25, Num 2, pp 177-182, issn 0035-1687Article

A study of EL₂ photoquenching properties by photoconductivity measurements of SI GaAs:CrFARVACQUE, J. L; GRUSON, B; VIGNAUD, D et al.Semiconductor science and technology. 1987, Vol 2, Num 5, pp 268-274, issn 0268-1242Article