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Defect generation and suppression in device processes using a shallow trench isolation schemePESCHIAROLI, D; BRAMBILLA, M; MICA, I et al.Proceedings - Electrochemical Society. 2003, pp 477-488, issn 0161-6374, isbn 1-56677-376-8, 12 p.Conference Paper

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Fully depleted SOI process and device technology for digital and RF applicationsICHIKAWA, F; NAGATOMO, Y; KATAKURA, Y et al.Proceedings - Electrochemical Society. 2003, pp 546-555, issn 0161-6374, isbn 1-56677-376-8, 10 p.Conference Paper

FeRAM technology: Today and futureKUNISHIMA, Iwao; NAGEL, Nicolas.Proceedings - Electrochemical Society. 2003, pp 149-151, issn 0161-6374, isbn 1-56677-376-8, 3 p.Conference Paper

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New characterization techniques for SOI and related devicesOKHONIN, S; NAGOGA, M; FAZAN, P et al.Proceedings - Electrochemical Society. 2003, pp 584-586, issn 0161-6374, isbn 1-56677-376-8, 3 p.Conference Paper

Electrodeposition of low-dimensional phases on au studied by EQCM and XRDSHANNON, Curtis.Proceedings - Electrochemical Society. 2003, pp 489-490, issn 0161-6374, isbn 1-56677-376-8, 2 p.Conference Paper

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