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Results 1 to 25 of 95

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Novel integration technologies for highly manufacturable 32Mb FRAMKIM, H. H; SONG, Y. J; LEE, S. W et al.Symposium on VLSI technology. 2002, pp 210-211, isbn 0-7803-7312-X, 2 p.Conference Paper

The electrode and inter-connection for ferroelectric memory devicesTAKASU, H.IEEE 1999 international interconnect technology conference. 1999, pp 6-8, isbn 0-7803-5174-6Conference Paper

Material aspects in emerging nonvolatile memoriesMIKOLAJICK, Thomas; PINNOW, Cay-Uwe.Proceedings - Electrochemical Society. 2003, pp 290-304, issn 0161-6374, isbn 1-56677-346-6, 15 p.Conference Paper

Operation of single transistor type ferroelectric random access memorySHIM, S. I; KIM, S.-I; KIM, Y. T et al.Electronics Letters. 2004, Vol 40, Num 22, pp 1397-1398, issn 0013-5194, 2 p.Article

Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memoryLAI, S. C; TSAI, C. W; LIU, Rich et al.International Symposium on the Physical & Failure Analysis of Integrated Circuits. 2004, pp 123-126, isbn 0-7803-8454-7, 1Vol, 4 p.Conference Paper

Future 1T1C FRAM technologies for highly reliable, high density FRAMLEE, S. Y; KIM, Kinam.IEDm : international electron devices meeting. 2002, pp 547-550, isbn 0-7803-7462-2, 4 p.Conference Paper

Relaxor-based thin film memories and the depolarizing field problemMARQUES, Manuel I; ARAGO, Carmen.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 6, pp 1962-1967, issn 1862-6300, 6 p.Conference Paper

Real information storage using ferroelectrics with a density of 1 TBIT/INCHTANAKA, K; HIRANAGA, Y; CHO, Y et al.Ferroelectrics (Print). 2006, Vol 340, pp 99-105, issn 0015-0193, 7 p.Conference Paper

Material aspects in emerging nonvolatile memoriesPINNOW, Cay-Uwe; MIKOLAJICK, Thomas.Journal of the Electrochemical Society. 2004, Vol 151, Num 6, pp K13-K19, issn 0013-4651Article

Recent progress of ferroelectric memoriesISHIWARA, Hiroshi.International journal of high speed electronics and systems. 2002, Vol 12, Num 2, pp 315-323, 9 p.Conference Paper

Ferroelectric random access memory based on one-transistor-one-capacitor structure for flexible electronicsMAO, D; MEJIA, I; SALAS-VILLASENOR, A. L et al.Organic electronics (Print). 2013, Vol 14, Num 2, pp 505-510, issn 1566-1199, 6 p.Article

Scaling Issues in Ferroelectric Barium Strontium Titanate Tunable Planar CapacitorsLAM, Peter G; HARIDASAN, Vrinda; ZHIPING FENG et al.IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 2012, Vol 59, Num 2, pp 198-204, issn 0885-3010, 7 p.Article

A Scalable Shield-Bitline-Overdrive Technique for Sub-1.5 V Chain FeRAMsTAKASHIMA, Daisaburo; SHIGA, Hidehiro; WATANABE, Yohji et al.IEEE journal of solid-state circuits. 2011, Vol 46, Num 9, pp 2171-2179, issn 0018-9200, 9 p.Article

Electrical properties of metal-ferroelectric-insulator-semiconductor structure using BaxSr1-xTiO3 for ferroelectric-gate field effect transistorSAIF, Ala'eddin A; POOPALAN, P.Solid-state electronics. 2011, Vol 62, Num 1, pp 25-30, issn 0038-1101, 6 p.Article

Effects of electrodes on the properties of sol―gel PZT based capacitors in FeRAMZHANG, Ming-Ming; ZE JIA; REN, Tian-Ling et al.Solid-state electronics. 2009, Vol 53, Num 5, pp 473-477, issn 0038-1101, 5 p.Article

Studies of solution processed metal oxides on siliconSHANMUGASUNDARAM, K; BRUBAKER, M; CHANG, K et al.Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 2294-2297, issn 0167-9317, 4 p.Conference Paper

Platinum chemical mechanical polishing (CMP) characteristics for high density ferroelectric memory applicationsKIM, Nam-Hoon; KO, Pil-Ju; SEOCK KOO KANG et al.Microelectronic engineering. 2007, Vol 84, Num 11, pp 2702-2706, issn 0167-9317, 5 p.Conference Paper

Memory performance and retention of an All-organic ferroelectric-like memory transistorSCHROEDER, Raoul; MAJEWSKI, Leszek A; VOIGT, Monika et al.IEEE electron device letters. 2005, Vol 26, Num 2, pp 69-71, issn 0741-3106, 3 p.Article

PZT MIM capacitor with oxygen-doped Ru-electrodes for embedded FeRAM devicesINOUE, Naoya; FURUTAKE, Naoya; TODA, Akio et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 10, pp 2227-2235, issn 0018-9383, 9 p.Article

Internally channel-coded framed time-hopping fiber-optic CDMA communicationsAZMI, Paeiz; NASIRI-KENARI, Masoumeh; SALEHI, Jawad A et al.Journal of lightwave technology. 2005, Vol 23, Num 11, pp 3702-3707, issn 0733-8724, 6 p.Article

Chemical mechanical polishing of Ba0.6Sr0.4TiO3 film prepared by sol-gel methodSEO, Yong-Jin; LEE, Woo-Sun.Microelectronic engineering. 2004, Vol 75, Num 2, pp 149-154, issn 0167-9317, 6 p.Article

Improvement of ferroelectric properties of Pt-SrBi2Nb2O9-SiO2-Si gate structure through oxygen plasma rapid thermal annealingIK SOO KIM; KIM, Seong-Il; YONG TAE KIM et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 1, pp 125-129, issn 0031-8965, 5 p.Article

Circuit implementations of the differential capacitance read scheme (DCRS) for ferroelectric random-access memories (FeRAM)ESLAMI, Yadollah; SHEIKHOLESLAMI, Ali; MASUI, Shoichi et al.IEEE journal of solid-state circuits. 2004, Vol 39, Num 11, pp 2024-2031, issn 0018-9200, 8 p.Article

Electroactive polymers: An emerging technology for MEMSKORNBLUH, Roy; PELRINE, Ron; PRAHLAD, Harsha et al.SPIE proceedings series. 2004, pp 13-27, isbn 0-8194-5252-1, 15 p.Conference Paper

Application of high-K dielectrics in CMOS technology and emerging new technologyLIU, Rich; WU, Tai-Bor.Proceedings - Electrochemical Society. 2003, pp 207-216, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

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